電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)組制(zhi)造商來說(shuo)，針(zhen)對電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)供(gong)電(dian)(dian)(dian)(dian)(dian)系(xi)(xi)統構(gou)建(jian)安(an)全(quan)且可(ke)靠(kao)(kao)的(de)(de)產品(pin)是(shi)至關(guan)重要(yao)的(de)(de)。電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)包中的(de)(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)管(guan)理(li)電(dian)(dian)(dian)(dian)(dian)路可(ke)以(yi)監控(kong)鋰(li)離(li)子電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)運(yun)行狀態，包括了電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)阻抗、溫度、單(dan)元(yuan)電(dian)(dian)(dian)(dian)(dian)壓、充電(dian)(dian)(dian)(dian)(dian)和(he)放電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流以(yi)及充電(dian)(dian)(dian)(dian)(dian)狀態等，以(yi)為系(xi)(xi)統提(ti)供(gong)詳(xiang)細的(de)(de)剩余運(yun)轉時(shi)間和(he)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)健康狀況信息，確保(bao)(bao)系(xi)(xi)統作出正確的(de)(de)決(jue)策。此外，為了改進(jin)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)安(an)全(quan)性能，即使(shi)只有一種故障(zhang)發(fa)生，例如(ru)過(guo)電(dian)(dian)(dian)(dian)(dian)流、短路、單(dan)元(yuan)和(he)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)包的(de)(de)電(dian)(dian)(dian)(dian)(dian)壓過(guo)高、溫度過(guo)高等，系(xi)(xi)統也會關(guan)閉兩個和(he)鋰(li)離(li)子電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)串聯的(de)(de)背靠(kao)(kao)背（back-to-back）保(bao)(bao)護MOSFET，將電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)單(dan)元(yuan)斷開。基于阻抗跟蹤技術的(de)(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)管(guan)理(li)單(dan)元(yuan)（BMS）會在整個電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)使(shi)用(yong)周期內監控(kong)單(dan)元(yuan)阻抗和(he)電(dian)(dian)(dian)(dian)(dian)壓失衡，并有可(ke)能檢測電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)微(wei)小短路（micro-short），防止電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)單(dan)元(yuan)造成(cheng)火災乃至爆炸。

鋰離子電池安全

       過高的工作溫度將加速電池的老化，并可能導致鋰離子電池包的熱失控（thermal run-away）及爆炸。對于鋰離子電池高度活性化的含能材料來說，這一點是備受關注的。大電流的過度充電及短路都有可能造成電池溫度的快速上升。鋰離子電池過(guo)度(du)充電期間，活躍(yue)得金屬(shu)鋰沉積在電池的正極(ji)，其材料極(ji)大的增加了爆(bao)炸(zha)的危險性，因(yin)為鋰將(jiang)有(you)可(ke)能與(yu)(yu)多種(zhong)材料起反應(ying)而爆(bao)炸(zha)，包(bao)括了電解(jie)液(ye)及陰(yin)(yin)極(ji)材料。例如(ru)，鋰/碳插層(ceng)混合物（intercalated compound）與(yu)(yu)水發生反應(ying)，并釋放(fang)出氫氣，氫氣有(you)可(ke)能被反應(ying)放(fang)熱(re)所引(yin)燃。陰(yin)(yin)極(ji)材料，諸如(ru)LiCoO2，在溫度(du)超(chao)過(guo)175℃的熱(re)失控溫度(du)限（4.3V單元電壓）時，也將(jiang)開(kai)始與(yu)(yu)電解(jie)液(ye)發生反應(ying)。

      鋰離(li)子電(dian)(dian)池(chi)(chi)使(shi)(shi)用很薄的(de)(de)微孔(kong)膜（micro-porous film）材(cai)(cai)料，例如(ru)聚烯烴(jing)，進行電(dian)(dian)池(chi)(chi)正負(fu)極(ji)(ji)的(de)(de)電(dian)(dian)子隔離(li)，因為(wei)(wei)此(ci)類材(cai)(cai)料具有卓越的(de)(de)力學性能(neng)、化學穩定性以(yi)及可接受的(de)(de)價格。聚烯烴(jing)的(de)(de)熔(rong)(rong)點(dian)范圍(wei)較(jiao)低，為(wei)(wei)135℃至 165℃，使(shi)(shi)得(de)(de)聚烯烴(jing)適用于作(zuo)為(wei)(wei)熱(re)(re)保險（fuse）材(cai)(cai)料。隨著溫度的(de)(de)升高(gao)并達到聚合體(ti)(ti)的(de)(de)熔(rong)(rong)點(dian)，材(cai)(cai)料的(de)(de)多(duo)孔(kong)性將失效，其(qi)目的(de)(de)是使(shi)(shi)得(de)(de)鋰離(li)子無(wu)法(fa)在(zai)電(dian)(dian)極(ji)(ji)之間(jian)流動(dong)(dong)，從而關斷電(dian)(dian)池(chi)(chi)。同時，熱(re)(re)敏陶瓷（PCT）設備以(yi)及安全(quan)排出口（safety vent）為(wei)(wei)鋰離(li)子電(dian)(dian)池(chi)(chi)提供了(le)額外(wai)的(de)(de)保護。電(dian)(dian)池(chi)(chi)的(de)(de)外(wai)殼，一般(ban)作(zuo)為(wei)(wei)負(fu)極(ji)(ji)接線端，通常為(wei)(wei)典型的(de)(de)鍍鎳金(jin)屬板。在(zai)殼體(ti)(ti)密封的(de)(de)情況下，金(jin)屬微粒(li)將可能(neng)污染(ran)電(dian)(dian)池(chi)(chi)的(de)(de)內部(bu)。隨著時間(jian)的(de)(de)推移(yi)，微粒(li)有可能(neng)遷移(yi)至隔離(li)器，并使(shi)(shi)得(de)(de)電(dian)(dian)池(chi)(chi)陽(yang)極(ji)(ji)與陰極(ji)(ji)之間(jian)的(de)(de)絕緣層老(lao)化。而陽(yang)極(ji)(ji)與陰極(ji)(ji)之間(jian)的(de)(de)微小(xiao)短路將允許電(dian)(dian)子肆(si)意的(de)(de)流動(dong)(dong)，并最(zui)終(zhong)使(shi)(shi)電(dian)(dian)池(chi)(chi)失效。絕大多(duo)數情況下，此(ci)類失效等(deng)同于電(dian)(dian)池(chi)(chi)無(wu)法(fa)供電(dian)(dian)且功能(neng)完全(quan)終(zhong)止。在(zai)少數情況下，電(dian)(dian)池(chi)(chi)有可能(neng)過熱(re)(re)、熔(rong)(rong)斷、著火乃至爆炸。這就是近期(qi)所報(bao)道的(de)(de)電(dian)(dian)池(chi)(chi)故障的(de)(de)主要根源，并使(shi)(shi)得(de)(de)眾多(duo)的(de)(de)廠商不得(de)(de)不將其(qi)產品召回。

電池管理單元（BMS）以及電池保護

      電(dian)池(chi)(chi)材料的(de)(de)(de)不斷開發提(ti)升了熱(re)失(shi)控的(de)(de)(de)上限溫度。另(ling)一方面，雖(sui)然電(dian)池(chi)(chi)必須通(tong)過(guo)嚴格的(de)(de)(de)UL安全測(ce)試，例如(ru)UL1642，但提(ti)供正確的(de)(de)(de)充電(dian)狀(zhuang)態并(bing)很好的(de)(de)(de)應對多(duo)(duo)種有(you)可能出現的(de)(de)(de)電(dian)子原件故(gu)障仍然是系統設計(ji)人員的(de)(de)(de)職責所(suo)在。過(guo)電(dian)壓、過(guo)電(dian)流、短路、過(guo)熱(re)狀(zhuang)態以及外部分(fen)立元(yuan)件的(de)(de)(de)故(gu)障都(dou)有(you)可能引起電(dian)池(chi)(chi)突變的(de)(de)(de)失(shi)效。這就意味著(zhu)需(xu)要采取(qu)多(duo)(duo)重(zhong)的(de)(de)(de)保護――在同一電(dian)池(chi)(chi)包(bao)內具(ju)有(you)至少(shao)兩個獨立的(de)(de)(de)保護電(dian)路或(huo)機制。同時，還(huan)希望具(ju)備用于檢測(ce)電(dian)池(chi)(chi)內部微小短路的(de)(de)(de)電(dian)子電(dian)路以避免電(dian)池(chi)(chi)故(gu)障。

     電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路設計(ji)(ji)用(yong)于精確的(de)(de)(de)(de)(de)(de)指示可用(yong)的(de)(de)(de)(de)(de)(de)鋰(li)離(li)子(zi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)。該電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路獨特的(de)(de)(de)(de)(de)(de)算(suan)法(fa)允許實(shi)時的(de)(de)(de)(de)(de)(de)追蹤(zong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)包的(de)(de)(de)(de)(de)(de)蓄電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)變化、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)阻抗(kang)、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流、溫度(du)(du)以(yi)(yi)及(ji)其它電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路信息。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計(ji)(ji)自(zi)動的(de)(de)(de)(de)(de)(de)計(ji)(ji)算(suan)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)(de)(de)(de)(de)速率、自(zi)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)以(yi)(yi)及(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)單(dan)元老化，在電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)使(shi)用(yong)壽命期限內(nei)(nei)實(shi)現了高(gao)精度(du)(du)的(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計(ji)(ji)量(liang)(liang)。例(li)如，一系列專利的(de)(de)(de)(de)(de)(de)阻抗(kang)追蹤(zong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計(ji)(ji)，包括bq20z70，bq20z80以(yi)(yi)及(ji)bq20z90，均可在電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)壽命期限內(nei)(nei)提供高(gao)達1%精度(du)(du)的(de)(de)(de)(de)(de)(de)計(ji)(ji)量(liang)(liang)。單(dan)個熱敏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻被用(yong)于監測鋰(li)離(li)子(zi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)(de)(de)(de)(de)溫度(du)(du)，以(yi)(yi)實(shi)現電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)單(dan)元的(de)(de)(de)(de)(de)(de)過(guo)熱保護，并用(yong)于充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)限定。例(li)如，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)單(dan)元一般不允許在低于0℃或(huo)高(gao)于45℃的(de)(de)(de)(de)(de)(de)溫度(du)(du)范(fan)圍(wei)內(nei)(nei)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)，且(qie)不允許在電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)單(dan)元溫度(du)(du)高(gao)于65℃時放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)。如檢測到過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓、過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流或(huo)過(guo)熱狀態(tai)，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計(ji)(ji)IC將指令控制AFE關(guan)(guan)閉(bi)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET Q1及(ji)Q2。當(dang)檢測到電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)欠(qian)壓（under-voltage）狀態(tai)時，則將指令控制AFE關(guan)(guan)閉(bi)放(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET Q2，且(qie)同時保持充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET開啟，以(yi)(yi)允許電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)。

     AFE的(de)(de)主要(yao)任務是對過載、短(duan)(duan)路的(de)(de)檢(jian)測(ce)(ce)(ce)，并保護(hu)充(chong)電(dian)(dian)(dian)及放(fang)電(dian)(dian)(dian)MOSFET、電(dian)(dian)(dian)池單元以及其它線路上(shang)的(de)(de)元件，避免(mian)過電(dian)(dian)(dian)流狀(zhuang)態。過載檢(jian)測(ce)(ce)(ce)用(yong)于(yu)(yu)檢(jian)測(ce)(ce)(ce)電(dian)(dian)(dian)池放(fang)電(dian)(dian)(dian)流向(xiang)上(shang)的(de)(de)過電(dian)(dian)(dian)流（OC），同時，短(duan)(duan)路（SC）檢(jian)測(ce)(ce)(ce)用(yong)于(yu)(yu)檢(jian)測(ce)(ce)(ce)充(chong)電(dian)(dian)(dian)及放(fang)電(dian)(dian)(dian)流向(xiang)上(shang)的(de)(de)過電(dian)(dian)(dian)流。AFE電(dian)(dian)(dian)路的(de)(de)過載和短(duan)(duan)路限定以及延遲(chi)時間均可通過電(dian)(dian)(dian)量計數據閃存(cun)編程設定。當檢(jian)測(ce)(ce)(ce)到過載或短(duan)(duan)路狀(zhuang)態，且達到了程序設定的(de)(de)延遲(chi)時間，則(ze)充(chong)電(dian)(dian)(dian)及放(fang)電(dian)(dian)(dian)MOSFET Q1及Q2將(jiang)被關閉(bi)，詳細的(de)(de)狀(zhuang)態信息將(jiang)存(cun)儲于(yu)(yu)AFE的(de)(de)狀(zhuang)態寄存(cun)器，從(cong)而電(dian)(dian)(dian)量計可讀取并調查導致故障的(de)(de)原因。

對于計量2、3或4個鋰離子電池包的(de)(de)(de)(de)(de)電量計芯(xin)片集解(jie)決(jue)(jue)方案來說，AFE起了(le)(le)很重要(yao)的(de)(de)(de)(de)(de)作用。AFE提供(gong)(gong)了(le)(le)所(suo)需的(de)(de)(de)(de)(de)所(suo)有高壓(ya)接(jie)口以及(ji)硬(ying)件電流(liu)保護特性。所(suo)提供(gong)(gong)的(de)(de)(de)(de)(de)I2C兼容(rong)接(jie)口允(yun)許電量計訪問(wen)AFE寄(ji)存器(qi)并配置AFE的(de)(de)(de)(de)(de)保護特性。AFE還集成了(le)(le)電池(chi)(chi)單(dan)元(yuan)(yuan)(yuan)(yuan)平衡控制。多數情況(kuang)下，在多單(dan)元(yuan)(yuan)(yuan)(yuan)電池(chi)(chi)包中，每(mei)(mei)個(ge)獨(du)立(li)電池(chi)(chi)單(dan)元(yuan)(yuan)(yuan)(yuan)的(de)(de)(de)(de)(de)電荷(he)狀態(tai)（SOC）彼此(ci)不同，從而導致了(le)(le)不平衡單(dan)元(yuan)(yuan)(yuan)(yuan)間的(de)(de)(de)(de)(de)電壓(ya)差別。AFE針對每(mei)(mei)一(yi)的(de)(de)(de)(de)(de)電池(chi)(chi)單(dan)元(yuan)(yuan)(yuan)(yuan)整合了(le)(le)旁(pang)通(tong)通(tong)路。此(ci)類旁(pang)通(tong)通(tong)路可用于降低至每(mei)(mei)一(yi)單(dan)元(yuan)(yuan)(yuan)(yuan)的(de)(de)(de)(de)(de)充電電流(liu)，從而為(wei)電池(chi)(chi)單(dan)元(yuan)(yuan)(yuan)(yuan)充電期間的(de)(de)(de)(de)(de)SOC平衡提供(gong)(gong)了(le)(le)條件。基于阻(zu)抗追(zhui)蹤電量計對每(mei)(mei)一(yi)電池(chi)(chi)單(dan)元(yuan)(yuan)(yuan)(yuan)化學(xue)電荷(he)狀態(tai)的(de)(de)(de)(de)(de)確定，可在需要(yao)單(dan)元(yuan)(yuan)(yuan)(yuan)平衡時(shi)做出正確的(de)(de)(de)(de)(de)決(jue)(jue)策。

       具有不(bu)同激活時間的(de)(de)多極過電(dian)(dian)流(liu)(liu)(liu)保(bao)護(hu)限（如圖2所示(shi)）使得電(dian)(dian)池包保(bao)護(hu)更為強(qiang)健。電(dian)(dian)量計具有兩層(ceng)(ceng)的(de)(de)充電(dian)(dian)/放(fang)電(dian)(dian)過電(dian)(dian)流(liu)(liu)(liu)保(bao)護(hu)設(she)定，而AFE則提供(gong)了(le)第三(san)層(ceng)(ceng)的(de)(de)放(fang)電(dian)(dian)過電(dian)(dian)流(liu)(liu)(liu)保(bao)護(hu)。在短路狀態下，MOSFET及電(dian)(dian)池可能在數秒(miao)內毀壞，電(dian)(dian)量計芯(xin)片集完全依(yi)靠AFE來自動(dong)的(de)(de)關斷MOSFET，以免產生毀壞。

當電(dian)(dian)(dian)量計IC及(ji)其所關聯的(de)(de)AFE提供(gong)過電(dian)(dian)(dian)壓保(bao)護(hu)時(shi)(shi)(shi)，電(dian)(dian)(dian)壓監(jian)(jian)測(ce)的(de)(de)采(cai)樣特性限(xian)制了此類(lei)保(bao)護(hu)系統的(de)(de)響應(ying)時(shi)(shi)(shi)間。絕大(da)(da)多數應(ying)用要求能(neng)快(kuai)速響應(ying)，且(qie)實時(shi)(shi)(shi)、獨立(li)的(de)(de)過電(dian)(dian)(dian)壓監(jian)(jian)測(ce)器，并(bing)與(yu)電(dian)(dian)(dian)量計、AFE協同(tong)運作。該監(jian)(jian)測(ce)器獨立(li)于電(dian)(dian)(dian)量計及(ji)AFE，監(jian)(jian)測(ce)每(mei)一電(dian)(dian)(dian)池單元的(de)(de)電(dian)(dian)(dian)壓，并(bing)針(zhen)對(dui)每(mei)一達到硬(ying)件(jian)編碼過電(dian)(dian)(dian)壓限(xian)的(de)(de)電(dian)(dian)(dian)池單元提供(gong)邏輯(ji)電(dian)(dian)(dian)平(ping)輸出(chu)。過電(dian)(dian)(dian)壓保(bao)護(hu)的(de)(de)響應(ying)時(shi)(shi)(shi)間取決于外部延遲電(dian)(dian)(dian)容的(de)(de)大(da)(da)小。在典型的(de)(de)應(ying)用中，秒量級保(bao)護(hu)器的(de)(de)輸出(chu)將觸發化學保(bao)險絲(si)或其它失效保(bao)護(hu)設(she)備(bei)，以永久性的(de)(de)將鋰(li)離子電(dian)(dian)(dian)池與(yu)系統分離。

電(dian)(dian)(dian)池(chi)(chi)包(bao)(bao)永久性(xing)的(de)(de)(de)(de)(de)失(shi)效(xiao)保護(hu)對于(yu)電(dian)(dian)(dian)池(chi)(chi)管理(li)單元(yuan)(yuan)來(lai)說，很重要的(de)(de)(de)(de)(de)一點是要為(wei)非正常狀態(tai)(tai)下(xia)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)池(chi)(chi)包(bao)(bao)提供趨于(yu)保守的(de)(de)(de)(de)(de)關斷。永久性(xing)的(de)(de)(de)(de)(de)失(shi)效(xiao)保護(hu)包(bao)(bao)括了過電(dian)(dian)(dian)流的(de)(de)(de)(de)(de)放(fang)電(dian)(dian)(dian)及(ji)(ji)充(chong)電(dian)(dian)(dian)故障狀態(tai)(tai)下(xia)的(de)(de)(de)(de)(de)安(an)全、過熱(re)的(de)(de)(de)(de)(de)放(fang)電(dian)(dian)(dian)及(ji)(ji)充(chong)電(dian)(dian)(dian)狀態(tai)(tai)下(xia)的(de)(de)(de)(de)(de)安(an)全、過電(dian)(dian)(dian)壓的(de)(de)(de)(de)(de)故障狀態(tai)(tai)（峰值電(dian)(dian)(dian)壓）以(yi)及(ji)(ji)電(dian)(dian)(dian)池(chi)(chi)平衡故障、短接放(fang)電(dian)(dian)(dian)FET故障、充(chong)電(dian)(dian)(dian)MOSFET故障狀態(tai)(tai)下(xia)的(de)(de)(de)(de)(de)安(an)全。制造商可選(xuan)擇任意組合(he)上(shang)述的(de)(de)(de)(de)(de)永久性(xing)失(shi)效(xiao)保護(hu)。當檢測(ce)到(dao)任意的(de)(de)(de)(de)(de)此類故障，則(ze)保護(hu)設備將(jiang)熔斷化學(xue)保險(xian)絲(si)，以(yi)使得(de)電(dian)(dian)(dian)池(chi)(chi)包(bao)(bao)永久性(xing)的(de)(de)(de)(de)(de)失(shi)效(xiao)。作為(wei)電(dian)(dian)(dian)子元(yuan)(yuan)件故障的(de)(de)(de)(de)(de)外部失(shi)效(xiao)驗(yan)證，電(dian)(dian)(dian)池(chi)(chi)管理(li)單元(yuan)(yuan)設計用于(yu)檢測(ce)充(chong)電(dian)(dian)(dian)及(ji)(ji)放(fang)電(dian)(dian)(dian)MOSFET Q1及(ji)(ji)Q2的(de)(de)(de)(de)(de)失(shi)效(xiao)與否。如果任意充(chong)電(dian)(dian)(dian)或放(fang)電(dian)(dian)(dian)MOSFET短路，則(ze)化學(xue)保險(xian)絲(si)也將(jiang)熔斷。

      據報(bao)道，電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)內部的(de)(de)微(wei)小(xiao)短(duan)路(lu)也是導致近(jin)期多起(qi)電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)召回的(de)(de)主要(yao)原因。如何(he)檢測電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)內部的(de)(de)微(wei)小(xiao)短(duan)路(lu)并(bing)(bing)防止電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)著(zhu)火乃至爆(bao)炸呢？外殼(ke)封閉處理(li)過程中(zhong)，金屬微(wei)粒及其它雜質有(you)可能(neng)污染電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)內部，從而(er)引起(qi)電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)內部的(de)(de)微(wei)小(xiao)短(duan)路(lu)。內部的(de)(de)微(wei)小(xiao)短(duan)路(lu)將(jiang)極大地增加(jia)電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)的(de)(de)自放電(dian)(dian)速率，使(shi)得開(kai)路(lu)電(dian)(dian)壓(ya)較(jiao)之(zhi)正常(chang)狀態(tai)下的(de)(de)電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)單元有(you)所(suo)降低(di)。阻抗追蹤電(dian)(dian)量計監測開(kai)路(lu)電(dian)(dian)壓(ya)，并(bing)(bing)從而(er)檢測電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)單元的(de)(de)非均衡性(xing)――當不(bu)同電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)單元的(de)(de)開(kai)路(lu)電(dian)(dian)壓(ya)差異(yi)超(chao)過預先設置的(de)(de)限定值。當出現此類失(shi)效(xiao)時，將(jiang)產(chan)生永(yong)久性(xing)失(shi)效(xiao)的(de)(de)告警并(bing)(bing)斷(duan)開(kai)MOSFET，化學保險絲也可配(pei)置為熔斷(duan)。上述行(xing)為將(jiang)使(shi)得電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)包無法作為供電(dian)(dian)源(yuan)并(bing)(bing)因此屏蔽(bi)了電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)包內部的(de)(de)微(wei)小(xiao)短(duan)路(lu)電(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)(chi)單元，從而(er)防止了災害(hai)的(de)(de)發生。

小結

電(dian)池管(guan)理(li)單(dan)元(yuan)(yuan)對于(yu)確(que)保終端(duan)用戶(hu)的(de)(de)(de)(de)安(an)全性(xing)是至(zhi)關重要的(de)(de)(de)(de)。強健的(de)(de)(de)(de)多極(ji)保護――過(guo)電(dian)壓、過(guo)電(dian)流、過(guo)熱、電(dian)池單(dan)元(yuan)(yuan)非均衡以及MOSFET失效監(jian)(jian)測，極(ji)大地改善了(le)電(dian)池包(bao)的(de)(de)(de)(de)安(an)全性(xing)。通過(guo)監(jian)(jian)測電(dian)池單(dan)元(yuan)(yuan)的(de)(de)(de)(de)開環電(dian)壓，阻抗追蹤(zong)技(ji)術可檢測電(dian)池內部的(de)(de)(de)(de)微小(xiao)短(duan)路，并(bing)進而永久性(xing)的(de)(de)(de)(de)失效電(dian)池，確(que)保了(le)終端(duan)用戶(hu)的(de)(de)(de)(de)安(an)全。