電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)組制造商來說，針對電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)供電(dian)(dian)(dian)(dian)(dian)(dian)系(xi)統(tong)構建安全且可靠的(de)(de)產品是至關重(zhong)要的(de)(de)。電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)包(bao)(bao)中(zhong)的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)管(guan)理電(dian)(dian)(dian)(dian)(dian)(dian)路(lu)可以(yi)(yi)監控鋰離(li)(li)子電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)(de)運行狀態，包(bao)(bao)括(kuo)了電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)阻抗、溫度(du)、單(dan)元(yuan)電(dian)(dian)(dian)(dian)(dian)(dian)壓、充電(dian)(dian)(dian)(dian)(dian)(dian)和放電(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)流以(yi)(yi)及充電(dian)(dian)(dian)(dian)(dian)(dian)狀態等(deng)，以(yi)(yi)為(wei)系(xi)統(tong)提(ti)供詳細的(de)(de)剩余(yu)運轉(zhuan)時間(jian)和電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)健康狀況信息，確保系(xi)統(tong)作出正(zheng)確的(de)(de)決策(ce)。此外，為(wei)了改進(jin)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)(de)安全性能(neng)，即(ji)使只有一種故障發生，例如過電(dian)(dian)(dian)(dian)(dian)(dian)流、短(duan)路(lu)、單(dan)元(yuan)和電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)包(bao)(bao)的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)壓過高(gao)、溫度(du)過高(gao)等(deng)，系(xi)統(tong)也會關閉兩個(ge)和鋰離(li)(li)子電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)串聯的(de)(de)背(bei)靠背(bei)（back-to-back）保護MOSFET，將(jiang)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)單(dan)元(yuan)斷(duan)開。基(ji)于阻抗跟蹤(zong)技術的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)管(guan)理單(dan)元(yuan)（BMS）會在整(zheng)個(ge)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)使用周期內監控單(dan)元(yuan)阻抗和電(dian)(dian)(dian)(dian)(dian)(dian)壓失衡，并有可能(neng)檢測電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)(de)微小短(duan)路(lu)（micro-short），防止電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)單(dan)元(yuan)造成火災乃(nai)至爆炸。

鋰離子電池安全

       過高的工作溫度將加速電池的老化，并可能導致鋰離子電池包的熱失控（thermal run-away）及爆炸。對于鋰離子電池高度活性化的含能材料來說，這一點是備受關注的。大電流的過度充電及短路都有可能造成電池溫度的快速上升。鋰離子電池過(guo)度(du)(du)充(chong)電期間，活(huo)躍得(de)金屬鋰(li)(li)沉積在電池的(de)(de)正極(ji)(ji)，其(qi)材料(liao)極(ji)(ji)大的(de)(de)增加(jia)了爆炸的(de)(de)危險(xian)性(xing)，因為(wei)鋰(li)(li)將(jiang)有(you)(you)可能與多(duo)種(zhong)材料(liao)起反應而爆炸，包括了電解液及(ji)陰極(ji)(ji)材料(liao)。例如，鋰(li)(li)/碳插(cha)層混合物（intercalated compound）與水發生(sheng)反應，并釋(shi)放出(chu)氫氣(qi)，氫氣(qi)有(you)(you)可能被(bei)反應放熱(re)(re)所引燃。陰極(ji)(ji)材料(liao)，諸如LiCoO2，在溫(wen)(wen)度(du)(du)超過(guo)175℃的(de)(de)熱(re)(re)失控溫(wen)(wen)度(du)(du)限（4.3V單元電壓）時，也將(jiang)開始與電解液發生(sheng)反應。

      鋰離(li)子(zi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)使用(yong)很(hen)薄的(de)(de)(de)(de)(de)微(wei)孔膜（micro-porous film）材料(liao)，例(li)如聚烯(xi)烴，進行電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)正負(fu)(fu)極(ji)(ji)(ji)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)隔離(li)，因為(wei)(wei)此類(lei)材料(liao)具有卓越(yue)的(de)(de)(de)(de)(de)力學(xue)性(xing)能、化學(xue)穩定性(xing)以及可接受的(de)(de)(de)(de)(de)價格。聚烯(xi)烴的(de)(de)(de)(de)(de)熔(rong)點范(fan)圍較低，為(wei)(wei)135℃至(zhi) 165℃，使得聚烯(xi)烴適用(yong)于(yu)作為(wei)(wei)熱保(bao)險（fuse）材料(liao)。隨(sui)著溫度的(de)(de)(de)(de)(de)升高并達到聚合體的(de)(de)(de)(de)(de)熔(rong)點，材料(liao)的(de)(de)(de)(de)(de)多孔性(xing)將(jiang)失(shi)效(xiao)，其(qi)目的(de)(de)(de)(de)(de)是使得鋰離(li)子(zi)無(wu)法在電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)之間(jian)流(liu)動，從而關斷電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)。同時(shi)，熱敏陶瓷（PCT）設備(bei)以及安全(quan)排出口（safety vent）為(wei)(wei)鋰離(li)子(zi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)提(ti)供(gong)了額外的(de)(de)(de)(de)(de)保(bao)護。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)(de)(de)(de)外殼，一般(ban)作為(wei)(wei)負(fu)(fu)極(ji)(ji)(ji)接線端，通常為(wei)(wei)典型的(de)(de)(de)(de)(de)鍍鎳金(jin)屬板(ban)。在殼體密封的(de)(de)(de)(de)(de)情況(kuang)下，金(jin)屬微(wei)粒將(jiang)可能污染電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)(de)(de)(de)內部。隨(sui)著時(shi)間(jian)的(de)(de)(de)(de)(de)推(tui)移(yi)，微(wei)粒有可能遷移(yi)至(zhi)隔離(li)器(qi)，并使得電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)陽極(ji)(ji)(ji)與陰極(ji)(ji)(ji)之間(jian)的(de)(de)(de)(de)(de)絕緣層老(lao)化。而陽極(ji)(ji)(ji)與陰極(ji)(ji)(ji)之間(jian)的(de)(de)(de)(de)(de)微(wei)小短(duan)路(lu)將(jiang)允許(xu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)肆意(yi)的(de)(de)(de)(de)(de)流(liu)動，并最終使電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)失(shi)效(xiao)。絕大多數(shu)情況(kuang)下，此類(lei)失(shi)效(xiao)等同于(yu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)無(wu)法供(gong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)且(qie)功能完全(quan)終止(zhi)。在少數(shu)情況(kuang)下，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)有可能過熱、熔(rong)斷、著火乃(nai)至(zhi)爆炸。這就是近期所報道的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)故(gu)障(zhang)的(de)(de)(de)(de)(de)主(zhu)要根(gen)源，并使得眾多的(de)(de)(de)(de)(de)廠商不得不將(jiang)其(qi)產品召回。

電池管理單元（BMS）以及電池保護

      電(dian)(dian)池(chi)(chi)材(cai)料的(de)不斷開發提升了熱失控的(de)上(shang)限溫度。另一方面，雖然(ran)(ran)電(dian)(dian)池(chi)(chi)必須通過嚴格(ge)的(de)UL安全(quan)測試(shi)，例如UL1642，但提供正確的(de)充電(dian)(dian)狀(zhuang)態并很好(hao)的(de)應對(dui)多(duo)種有可能(neng)出現的(de)電(dian)(dian)子原件故障仍然(ran)(ran)是系統設計人(ren)員的(de)職責(ze)所在(zai)。過電(dian)(dian)壓、過電(dian)(dian)流、短路(lu)(lu)、過熱狀(zhuang)態以及(ji)外部(bu)分立元件的(de)故障都有可能(neng)引起電(dian)(dian)池(chi)(chi)突(tu)變的(de)失效。這就意味著(zhu)需(xu)要采取(qu)多(duo)重(zhong)的(de)保(bao)護(hu)――在(zai)同(tong)一電(dian)(dian)池(chi)(chi)包(bao)內具(ju)有至(zhi)少兩個獨立的(de)保(bao)護(hu)電(dian)(dian)路(lu)(lu)或(huo)機制(zhi)。同(tong)時，還希望具(ju)備用于檢測電(dian)(dian)池(chi)(chi)內部(bu)微小短路(lu)(lu)的(de)電(dian)(dian)子電(dian)(dian)路(lu)(lu)以避免電(dian)(dian)池(chi)(chi)故障。

     電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路設(she)計用于精確的(de)(de)(de)指(zhi)示(shi)可(ke)用的(de)(de)(de)鋰離子電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)。該(gai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路獨特的(de)(de)(de)算法允(yun)(yun)許(xu)實(shi)時的(de)(de)(de)追蹤電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)包(bao)的(de)(de)(de)蓄電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)變(bian)化、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)阻抗(kang)、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)、溫度(du)(du)以(yi)(yi)及(ji)其它電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路信息。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計自動的(de)(de)(de)計算充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)(de)速率(lv)、自放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)以(yi)(yi)及(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)單(dan)元老化，在(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)使用壽(shou)命期(qi)限內實(shi)現了高(gao)精度(du)(du)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計量(liang)(liang)。例如，一(yi)系列專(zhuan)利的(de)(de)(de)阻抗(kang)追蹤電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計，包(bao)括bq20z70，bq20z80以(yi)(yi)及(ji)bq20z90，均可(ke)在(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)壽(shou)命期(qi)限內提供高(gao)達1%精度(du)(du)的(de)(de)(de)計量(liang)(liang)。單(dan)個(ge)熱敏(min)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻被(bei)用于監測鋰離子電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)(de)(de)溫度(du)(du)，以(yi)(yi)實(shi)現電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)單(dan)元的(de)(de)(de)過熱保護，并用于充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)限定。例如，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)單(dan)元一(yi)般不(bu)允(yun)(yun)許(xu)在(zai)低于0℃或高(gao)于45℃的(de)(de)(de)溫度(du)(du)范圍(wei)內充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，且不(bu)允(yun)(yun)許(xu)在(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)單(dan)元溫度(du)(du)高(gao)于65℃時放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。如檢(jian)(jian)測到過電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓、過電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)或過熱狀態，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)計IC將(jiang)指(zhi)令(ling)控制AFE關閉充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET Q1及(ji)Q2。當檢(jian)(jian)測到電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)欠壓（under-voltage）狀態時，則將(jiang)指(zhi)令(ling)控制AFE關閉放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET Q2，且同時保持充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET開啟(qi)，以(yi)(yi)允(yun)(yun)許(xu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。

     AFE的(de)(de)(de)(de)主要任務是(shi)對過(guo)(guo)載(zai)、短路(lu)的(de)(de)(de)(de)檢(jian)(jian)測，并保護充(chong)電及放(fang)電MOSFET、電池單元以及其它(ta)線(xian)路(lu)上(shang)的(de)(de)(de)(de)元件，避免過(guo)(guo)電流狀(zhuang)態(tai)(tai)。過(guo)(guo)載(zai)檢(jian)(jian)測用于(yu)檢(jian)(jian)測電池放(fang)電流向上(shang)的(de)(de)(de)(de)過(guo)(guo)電流（OC），同時(shi)，短路(lu)（SC）檢(jian)(jian)測用于(yu)檢(jian)(jian)測充(chong)電及放(fang)電流向上(shang)的(de)(de)(de)(de)過(guo)(guo)電流。AFE電路(lu)的(de)(de)(de)(de)過(guo)(guo)載(zai)和短路(lu)限定以及延遲時(shi)間(jian)均可(ke)通過(guo)(guo)電量計數據閃存(cun)(cun)編(bian)程設定。當檢(jian)(jian)測到過(guo)(guo)載(zai)或短路(lu)狀(zhuang)態(tai)(tai)，且(qie)達到了(le)程序設定的(de)(de)(de)(de)延遲時(shi)間(jian)，則充(chong)電及放(fang)電MOSFET Q1及Q2將被關閉，詳細的(de)(de)(de)(de)狀(zhuang)態(tai)(tai)信息將存(cun)(cun)儲(chu)于(yu)AFE的(de)(de)(de)(de)狀(zhuang)態(tai)(tai)寄存(cun)(cun)器，從而電量計可(ke)讀取(qu)并調(diao)查導致(zhi)故障的(de)(de)(de)(de)原(yuan)因。

對于計量2、3或4個鋰離子電池包的(de)(de)(de)電(dian)(dian)(dian)量(liang)(liang)計(ji)(ji)芯片集解(jie)決方案來說，AFE起了(le)很重要(yao)的(de)(de)(de)作(zuo)用。AFE提供(gong)了(le)所(suo)(suo)需(xu)的(de)(de)(de)所(suo)(suo)有高(gao)壓(ya)接(jie)口以(yi)及硬(ying)件(jian)電(dian)(dian)(dian)流(liu)(liu)保護特(te)性(xing)。所(suo)(suo)提供(gong)的(de)(de)(de)I2C兼(jian)容(rong)接(jie)口允許電(dian)(dian)(dian)量(liang)(liang)計(ji)(ji)訪問AFE寄(ji)存(cun)器并配置AFE的(de)(de)(de)保護特(te)性(xing)。AFE還集成了(le)電(dian)(dian)(dian)池(chi)單(dan)元(yuan)平(ping)衡(heng)(heng)(heng)控制。多數(shu)情況下，在多單(dan)元(yuan)電(dian)(dian)(dian)池(chi)包中，每(mei)(mei)個(ge)獨立電(dian)(dian)(dian)池(chi)單(dan)元(yuan)的(de)(de)(de)電(dian)(dian)(dian)荷(he)狀態（SOC）彼此(ci)不同，從而(er)(er)導致了(le)不平(ping)衡(heng)(heng)(heng)單(dan)元(yuan)間(jian)的(de)(de)(de)電(dian)(dian)(dian)壓(ya)差(cha)別。AFE針對(dui)每(mei)(mei)一(yi)的(de)(de)(de)電(dian)(dian)(dian)池(chi)單(dan)元(yuan)整合了(le)旁通通路。此(ci)類旁通通路可用于降低至每(mei)(mei)一(yi)單(dan)元(yuan)的(de)(de)(de)充(chong)電(dian)(dian)(dian)電(dian)(dian)(dian)流(liu)(liu)，從而(er)(er)為電(dian)(dian)(dian)池(chi)單(dan)元(yuan)充(chong)電(dian)(dian)(dian)期(qi)間(jian)的(de)(de)(de)SOC平(ping)衡(heng)(heng)(heng)提供(gong)了(le)條件(jian)。基于阻抗追蹤(zong)電(dian)(dian)(dian)量(liang)(liang)計(ji)(ji)對(dui)每(mei)(mei)一(yi)電(dian)(dian)(dian)池(chi)單(dan)元(yuan)化學(xue)電(dian)(dian)(dian)荷(he)狀態的(de)(de)(de)確定，可在需(xu)要(yao)單(dan)元(yuan)平(ping)衡(heng)(heng)(heng)時(shi)做出正確的(de)(de)(de)決策(ce)。

       具有不同激(ji)活時間(jian)的多極過(guo)電(dian)(dian)(dian)流(liu)保(bao)(bao)(bao)護(hu)限（如圖2所示）使得電(dian)(dian)(dian)池包保(bao)(bao)(bao)護(hu)更為(wei)強健(jian)。電(dian)(dian)(dian)量計(ji)具有兩層(ceng)的充電(dian)(dian)(dian)/放電(dian)(dian)(dian)過(guo)電(dian)(dian)(dian)流(liu)保(bao)(bao)(bao)護(hu)設定，而(er)AFE則(ze)提供了(le)第三層(ceng)的放電(dian)(dian)(dian)過(guo)電(dian)(dian)(dian)流(liu)保(bao)(bao)(bao)護(hu)。在短路狀態下(xia)，MOSFET及電(dian)(dian)(dian)池可能在數秒內毀(hui)壞，電(dian)(dian)(dian)量計(ji)芯片(pian)集完全依靠AFE來自(zi)動的關斷(duan)MOSFET，以免產生毀(hui)壞。

當電(dian)(dian)(dian)量計IC及其所關聯的(de)(de)AFE提供(gong)過(guo)(guo)電(dian)(dian)(dian)壓(ya)(ya)(ya)保(bao)護時，電(dian)(dian)(dian)壓(ya)(ya)(ya)監(jian)測的(de)(de)采樣特(te)性(xing)限制了(le)此類保(bao)護系統的(de)(de)響應(ying)(ying)時間(jian)。絕大多數應(ying)(ying)用(yong)要(yao)求(qiu)能快(kuai)速響應(ying)(ying)，且實時、獨立(li)(li)的(de)(de)過(guo)(guo)電(dian)(dian)(dian)壓(ya)(ya)(ya)監(jian)測器(qi)，并與(yu)電(dian)(dian)(dian)量計、AFE協同運作。該監(jian)測器(qi)獨立(li)(li)于電(dian)(dian)(dian)量計及AFE，監(jian)測每一電(dian)(dian)(dian)池單元(yuan)的(de)(de)電(dian)(dian)(dian)壓(ya)(ya)(ya)，并針對每一達到硬件編碼(ma)過(guo)(guo)電(dian)(dian)(dian)壓(ya)(ya)(ya)限的(de)(de)電(dian)(dian)(dian)池單元(yuan)提供(gong)邏輯電(dian)(dian)(dian)平輸出。過(guo)(guo)電(dian)(dian)(dian)壓(ya)(ya)(ya)保(bao)護的(de)(de)響應(ying)(ying)時間(jian)取決于外(wai)部延遲電(dian)(dian)(dian)容的(de)(de)大小(xiao)。在(zai)典型的(de)(de)應(ying)(ying)用(yong)中，秒量級保(bao)護器(qi)的(de)(de)輸出將(jiang)觸發化學保(bao)險絲或其它失效保(bao)護設備，以永久(jiu)性(xing)的(de)(de)將(jiang)鋰離(li)(li)子電(dian)(dian)(dian)池與(yu)系統分(fen)離(li)(li)。

電(dian)(dian)(dian)池(chi)包永久(jiu)(jiu)性(xing)的(de)(de)(de)失(shi)(shi)(shi)效保(bao)(bao)護(hu)對于(yu)電(dian)(dian)(dian)池(chi)管理(li)單元來說，很重要的(de)(de)(de)一點(dian)是要為(wei)(wei)非正常狀(zhuang)態(tai)下的(de)(de)(de)電(dian)(dian)(dian)池(chi)包提供趨于(yu)保(bao)(bao)守的(de)(de)(de)關(guan)斷(duan)。永久(jiu)(jiu)性(xing)的(de)(de)(de)失(shi)(shi)(shi)效保(bao)(bao)護(hu)包括了過(guo)電(dian)(dian)(dian)流的(de)(de)(de)放(fang)(fang)電(dian)(dian)(dian)及(ji)充(chong)電(dian)(dian)(dian)故(gu)(gu)障(zhang)(zhang)狀(zhuang)態(tai)下的(de)(de)(de)安全(quan)、過(guo)熱的(de)(de)(de)放(fang)(fang)電(dian)(dian)(dian)及(ji)充(chong)電(dian)(dian)(dian)狀(zhuang)態(tai)下的(de)(de)(de)安全(quan)、過(guo)電(dian)(dian)(dian)壓的(de)(de)(de)故(gu)(gu)障(zhang)(zhang)狀(zhuang)態(tai)（峰值電(dian)(dian)(dian)壓）以及(ji)電(dian)(dian)(dian)池(chi)平衡故(gu)(gu)障(zhang)(zhang)、短接(jie)放(fang)(fang)電(dian)(dian)(dian)FET故(gu)(gu)障(zhang)(zhang)、充(chong)電(dian)(dian)(dian)MOSFET故(gu)(gu)障(zhang)(zhang)狀(zhuang)態(tai)下的(de)(de)(de)安全(quan)。制造(zao)商可選擇任(ren)(ren)意組合上述的(de)(de)(de)永久(jiu)(jiu)性(xing)失(shi)(shi)(shi)效保(bao)(bao)護(hu)。當檢(jian)測到任(ren)(ren)意的(de)(de)(de)此類故(gu)(gu)障(zhang)(zhang)，則(ze)保(bao)(bao)護(hu)設備將熔斷(duan)化學保(bao)(bao)險絲(si)(si)，以使得(de)電(dian)(dian)(dian)池(chi)包永久(jiu)(jiu)性(xing)的(de)(de)(de)失(shi)(shi)(shi)效。作為(wei)(wei)電(dian)(dian)(dian)子元件故(gu)(gu)障(zhang)(zhang)的(de)(de)(de)外部失(shi)(shi)(shi)效驗證，電(dian)(dian)(dian)池(chi)管理(li)單元設計用于(yu)檢(jian)測充(chong)電(dian)(dian)(dian)及(ji)放(fang)(fang)電(dian)(dian)(dian)MOSFET Q1及(ji)Q2的(de)(de)(de)失(shi)(shi)(shi)效與否。如果任(ren)(ren)意充(chong)電(dian)(dian)(dian)或放(fang)(fang)電(dian)(dian)(dian)MOSFET短路(lu)，則(ze)化學保(bao)(bao)險絲(si)(si)也將熔斷(duan)。

      據報道，電(dian)(dian)池(chi)(chi)內(nei)(nei)部(bu)(bu)的(de)(de)(de)微(wei)(wei)小(xiao)(xiao)短(duan)路也是導致近期多起(qi)電(dian)(dian)池(chi)(chi)召(zhao)回的(de)(de)(de)主(zhu)要原因。如何檢測(ce)電(dian)(dian)池(chi)(chi)內(nei)(nei)部(bu)(bu)的(de)(de)(de)微(wei)(wei)小(xiao)(xiao)短(duan)路并防(fang)止電(dian)(dian)池(chi)(chi)著火乃至爆炸呢？外殼封閉(bi)處理(li)過程(cheng)中(zhong)，金屬微(wei)(wei)粒及(ji)其它雜質(zhi)有可能污染電(dian)(dian)池(chi)(chi)內(nei)(nei)部(bu)(bu)，從而引起(qi)電(dian)(dian)池(chi)(chi)內(nei)(nei)部(bu)(bu)的(de)(de)(de)微(wei)(wei)小(xiao)(xiao)短(duan)路。內(nei)(nei)部(bu)(bu)的(de)(de)(de)微(wei)(wei)小(xiao)(xiao)短(duan)路將(jiang)極大地(di)增加電(dian)(dian)池(chi)(chi)的(de)(de)(de)自放電(dian)(dian)速(su)率(lv)，使得(de)開路電(dian)(dian)壓較之正(zheng)常(chang)狀態(tai)下的(de)(de)(de)電(dian)(dian)池(chi)(chi)單(dan)元(yuan)有所(suo)降(jiang)低。阻抗追蹤(zong)電(dian)(dian)量(liang)計監測(ce)開路電(dian)(dian)壓，并從而檢測(ce)電(dian)(dian)池(chi)(chi)單(dan)元(yuan)的(de)(de)(de)非均衡(heng)性(xing)――當不(bu)同(tong)電(dian)(dian)池(chi)(chi)單(dan)元(yuan)的(de)(de)(de)開路電(dian)(dian)壓差異(yi)超(chao)過預先(xian)設置(zhi)的(de)(de)(de)限定值(zhi)。當出現此類失(shi)效時，將(jiang)產生永久性(xing)失(shi)效的(de)(de)(de)告警并斷(duan)開MOSFET，化學保險(xian)絲也可配置(zhi)為(wei)熔斷(duan)。上述(shu)行為(wei)將(jiang)使得(de)電(dian)(dian)池(chi)(chi)包無法作為(wei)供電(dian)(dian)源(yuan)并因此屏蔽了(le)(le)電(dian)(dian)池(chi)(chi)包內(nei)(nei)部(bu)(bu)的(de)(de)(de)微(wei)(wei)小(xiao)(xiao)短(duan)路電(dian)(dian)池(chi)(chi)單(dan)元(yuan)，從而防(fang)止了(le)(le)災害(hai)的(de)(de)(de)發生。

小結

電(dian)(dian)(dian)池管理單元對于確保(bao)終端(duan)用戶的(de)安(an)全(quan)性(xing)是至關(guan)重要的(de)。強健(jian)的(de)多極保(bao)護――過電(dian)(dian)(dian)壓(ya)、過電(dian)(dian)(dian)流、過熱(re)、電(dian)(dian)(dian)池單元非均衡(heng)以及MOSFET失效(xiao)監測，極大地改善了電(dian)(dian)(dian)池包的(de)安(an)全(quan)性(xing)。通過監測電(dian)(dian)(dian)池單元的(de)開環電(dian)(dian)(dian)壓(ya)，阻抗追蹤(zong)技(ji)術可檢測電(dian)(dian)(dian)池內部的(de)微小短路，并進(jin)而永(yong)久性(xing)的(de)失效(xiao)電(dian)(dian)(dian)池，確保(bao)了終端(duan)用戶的(de)安(an)全(quan)。