電(dian)(dian)池(chi)(chi)(chi)組(zu)制造商來(lai)說，針(zhen)對電(dian)(dian)池(chi)(chi)(chi)供電(dian)(dian)系(xi)(xi)(xi)統(tong)構建安(an)(an)全且(qie)可(ke)(ke)靠(kao)(kao)的(de)(de)產(chan)品是(shi)至關重(zhong)要的(de)(de)。電(dian)(dian)池(chi)(chi)(chi)包(bao)中(zhong)的(de)(de)電(dian)(dian)池(chi)(chi)(chi)管理(li)電(dian)(dian)路可(ke)(ke)以(yi)(yi)監控(kong)鋰(li)離子電(dian)(dian)池(chi)(chi)(chi)的(de)(de)運行狀(zhuang)態(tai)，包(bao)括(kuo)了電(dian)(dian)池(chi)(chi)(chi)阻抗(kang)、溫(wen)度、單(dan)(dan)元(yuan)電(dian)(dian)壓、充電(dian)(dian)和放電(dian)(dian)電(dian)(dian)流(liu)以(yi)(yi)及充電(dian)(dian)狀(zhuang)態(tai)等(deng)，以(yi)(yi)為(wei)系(xi)(xi)(xi)統(tong)提供詳細的(de)(de)剩余運轉(zhuan)時間和電(dian)(dian)池(chi)(chi)(chi)健(jian)康狀(zhuang)況信息，確(que)保系(xi)(xi)(xi)統(tong)作出正(zheng)確(que)的(de)(de)決策。此外，為(wei)了改進電(dian)(dian)池(chi)(chi)(chi)的(de)(de)安(an)(an)全性能(neng)(neng)，即使(shi)只(zhi)有(you)一(yi)種(zhong)故障發生(sheng)，例如過電(dian)(dian)流(liu)、短路、單(dan)(dan)元(yuan)和電(dian)(dian)池(chi)(chi)(chi)包(bao)的(de)(de)電(dian)(dian)壓過高、溫(wen)度過高等(deng)，系(xi)(xi)(xi)統(tong)也會(hui)關閉兩個(ge)和鋰(li)離子電(dian)(dian)池(chi)(chi)(chi)串聯的(de)(de)背(bei)(bei)靠(kao)(kao)背(bei)(bei)（back-to-back）保護MOSFET，將電(dian)(dian)池(chi)(chi)(chi)單(dan)(dan)元(yuan)斷開。基于阻抗(kang)跟(gen)蹤技術的(de)(de)電(dian)(dian)池(chi)(chi)(chi)管理(li)單(dan)(dan)元(yuan)（BMS）會(hui)在整個(ge)電(dian)(dian)池(chi)(chi)(chi)使(shi)用周期內監控(kong)單(dan)(dan)元(yuan)阻抗(kang)和電(dian)(dian)壓失衡，并有(you)可(ke)(ke)能(neng)(neng)檢測電(dian)(dian)池(chi)(chi)(chi)的(de)(de)微小短路（micro-short），防(fang)止電(dian)(dian)池(chi)(chi)(chi)單(dan)(dan)元(yuan)造成火災乃(nai)至爆炸。

鋰離子電池安全

       過高的工作溫度將加速電池的老化，并可能導致鋰離子電池包的熱失控（thermal run-away）及爆炸。對于鋰離子電池高度活性化的含能材料來說，這一點是備受關注的。大電流的過度充電及短路都有可能造成電池溫度的快速上升。鋰離子電池過度充電(dian)(dian)期(qi)間，活躍得金屬鋰(li)沉積(ji)在電(dian)(dian)池(chi)的正極(ji)(ji)，其(qi)材料極(ji)(ji)大的增(zeng)加了爆炸(zha)的危險性，因為鋰(li)將有(you)可(ke)能(neng)與(yu)多種(zhong)材料起反應(ying)(ying)而(er)爆炸(zha)，包括了電(dian)(dian)解(jie)(jie)液及陰極(ji)(ji)材料。例如，鋰(li)/碳插層混(hun)合物(wu)（intercalated compound）與(yu)水(shui)發(fa)(fa)生反應(ying)(ying)，并釋放出氫氣，氫氣有(you)可(ke)能(neng)被反應(ying)(ying)放熱(re)所引燃。陰極(ji)(ji)材料，諸(zhu)如LiCoO2，在溫度超過175℃的熱(re)失控溫度限（4.3V單元(yuan)電(dian)(dian)壓）時，也(ye)將開始與(yu)電(dian)(dian)解(jie)(jie)液發(fa)(fa)生反應(ying)(ying)。

      鋰離(li)子(zi)(zi)(zi)電(dian)(dian)池(chi)(chi)使(shi)用很薄的(de)(de)(de)(de)(de)(de)微孔膜（micro-porous film）材(cai)料，例(li)如(ru)聚烯(xi)烴(jing)(jing)，進(jin)行(xing)電(dian)(dian)池(chi)(chi)正(zheng)負(fu)極(ji)的(de)(de)(de)(de)(de)(de)電(dian)(dian)子(zi)(zi)(zi)隔(ge)離(li)，因為(wei)(wei)此類(lei)材(cai)料具有(you)卓越(yue)的(de)(de)(de)(de)(de)(de)力學性(xing)能(neng)、化(hua)學穩(wen)定性(xing)以及可(ke)(ke)接(jie)受的(de)(de)(de)(de)(de)(de)價格。聚烯(xi)烴(jing)(jing)的(de)(de)(de)(de)(de)(de)熔點范圍(wei)較低，為(wei)(wei)135℃至 165℃，使(shi)得聚烯(xi)烴(jing)(jing)適(shi)用于作為(wei)(wei)熱保(bao)險（fuse）材(cai)料。隨著溫(wen)度的(de)(de)(de)(de)(de)(de)升高并(bing)達到聚合體(ti)的(de)(de)(de)(de)(de)(de)熔點，材(cai)料的(de)(de)(de)(de)(de)(de)多孔性(xing)將失效，其(qi)(qi)目(mu)的(de)(de)(de)(de)(de)(de)是(shi)使(shi)得鋰離(li)子(zi)(zi)(zi)無法在(zai)電(dian)(dian)極(ji)之間流動，從(cong)而關斷(duan)電(dian)(dian)池(chi)(chi)。同(tong)時，熱敏陶瓷（PCT）設備以及安全(quan)排出口（safety vent）為(wei)(wei)鋰離(li)子(zi)(zi)(zi)電(dian)(dian)池(chi)(chi)提供了額外的(de)(de)(de)(de)(de)(de)保(bao)護。電(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)外殼(ke)，一般作為(wei)(wei)負(fu)極(ji)接(jie)線端，通常為(wei)(wei)典型的(de)(de)(de)(de)(de)(de)鍍鎳金(jin)屬(shu)板(ban)。在(zai)殼(ke)體(ti)密封的(de)(de)(de)(de)(de)(de)情(qing)況(kuang)(kuang)下，金(jin)屬(shu)微粒將可(ke)(ke)能(neng)污染(ran)電(dian)(dian)池(chi)(chi)的(de)(de)(de)(de)(de)(de)內部。隨著時間的(de)(de)(de)(de)(de)(de)推移，微粒有(you)可(ke)(ke)能(neng)遷(qian)移至隔(ge)離(li)器，并(bing)使(shi)得電(dian)(dian)池(chi)(chi)陽極(ji)與陰(yin)極(ji)之間的(de)(de)(de)(de)(de)(de)絕緣層老(lao)化(hua)。而陽極(ji)與陰(yin)極(ji)之間的(de)(de)(de)(de)(de)(de)微小(xiao)短路(lu)將允許電(dian)(dian)子(zi)(zi)(zi)肆意的(de)(de)(de)(de)(de)(de)流動，并(bing)最終(zhong)使(shi)電(dian)(dian)池(chi)(chi)失效。絕大多數(shu)情(qing)況(kuang)(kuang)下，此類(lei)失效等(deng)同(tong)于電(dian)(dian)池(chi)(chi)無法供電(dian)(dian)且功能(neng)完全(quan)終(zhong)止(zhi)。在(zai)少數(shu)情(qing)況(kuang)(kuang)下，電(dian)(dian)池(chi)(chi)有(you)可(ke)(ke)能(neng)過熱、熔斷(duan)、著火乃至爆炸。這就是(shi)近期所報(bao)道的(de)(de)(de)(de)(de)(de)電(dian)(dian)池(chi)(chi)故障的(de)(de)(de)(de)(de)(de)主要(yao)根源(yuan)，并(bing)使(shi)得眾(zhong)多的(de)(de)(de)(de)(de)(de)廠商(shang)不(bu)得不(bu)將其(qi)(qi)產品召回。

電池管理單元（BMS）以及電池保護

      電(dian)(dian)池(chi)材料的(de)(de)不(bu)斷(duan)開發(fa)提升(sheng)了熱失(shi)(shi)控的(de)(de)上限溫度。另一方面，雖然電(dian)(dian)池(chi)必(bi)須通過(guo)嚴格的(de)(de)UL安全測試，例如UL1642，但提供正確的(de)(de)充電(dian)(dian)狀態并很好的(de)(de)應對多種(zhong)有可能出現的(de)(de)電(dian)(dian)子原(yuan)件故障仍(reng)然是系(xi)統(tong)設(she)計人員的(de)(de)職責所在。過(guo)電(dian)(dian)壓、過(guo)電(dian)(dian)流、短路、過(guo)熱狀態以及外(wai)部分(fen)立元(yuan)件的(de)(de)故障都有可能引起電(dian)(dian)池(chi)突變的(de)(de)失(shi)(shi)效。這就意味著需要采取(qu)多重的(de)(de)保護――在同一電(dian)(dian)池(chi)包(bao)內具有至少兩個獨立的(de)(de)保護電(dian)(dian)路或機制。同時(shi)，還希(xi)望具備用于檢測電(dian)(dian)池(chi)內部微小(xiao)短路的(de)(de)電(dian)(dian)子電(dian)(dian)路以避免(mian)電(dian)(dian)池(chi)故障。

     電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)計(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路設計(ji)(ji)用于精確的(de)(de)(de)指(zhi)示可用的(de)(de)(de)鋰(li)離子(zi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)。該電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路獨特的(de)(de)(de)算法(fa)允(yun)許(xu)實時(shi)的(de)(de)(de)追蹤(zong)(zong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)包的(de)(de)(de)蓄(xu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)變化(hua)、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)阻抗、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流、溫(wen)度(du)(du)以(yi)及(ji)其它電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路信(xin)息。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)計(ji)(ji)自(zi)動的(de)(de)(de)計(ji)(ji)算充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)(de)速率(lv)、自(zi)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)以(yi)及(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元(yuan)(yuan)老化(hua)，在電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)使用壽(shou)命期限(xian)內(nei)實現了高(gao)精度(du)(du)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)計(ji)(ji)量(liang)(liang)(liang)。例如，一(yi)(yi)系(xi)列專(zhuan)利的(de)(de)(de)阻抗追蹤(zong)(zong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)計(ji)(ji)，包括bq20z70，bq20z80以(yi)及(ji)bq20z90，均可在電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)壽(shou)命期限(xian)內(nei)提供(gong)高(gao)達1%精度(du)(du)的(de)(de)(de)計(ji)(ji)量(liang)(liang)(liang)。單(dan)個(ge)熱(re)敏電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻被用于監測(ce)(ce)鋰(li)離子(zi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)溫(wen)度(du)(du)，以(yi)實現電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元(yuan)(yuan)的(de)(de)(de)過熱(re)保護，并(bing)用于充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)限(xian)定。例如，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元(yuan)(yuan)一(yi)(yi)般不(bu)允(yun)許(xu)在低于0℃或高(gao)于45℃的(de)(de)(de)溫(wen)度(du)(du)范圍(wei)內(nei)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，且不(bu)允(yun)許(xu)在電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單(dan)元(yuan)(yuan)溫(wen)度(du)(du)高(gao)于65℃時(shi)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。如檢測(ce)(ce)到過電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓、過電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流或過熱(re)狀(zhuang)態，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)量(liang)(liang)(liang)計(ji)(ji)IC將指(zhi)令控制(zhi)AFE關閉充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET Q1及(ji)Q2。當(dang)檢測(ce)(ce)到電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)欠壓（under-voltage）狀(zhuang)態時(shi)，則將指(zhi)令控制(zhi)AFE關閉放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET Q2，且同時(shi)保持充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)MOSFET開啟，以(yi)允(yun)許(xu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。

     AFE的(de)主要任務是對過(guo)(guo)(guo)(guo)載(zai)(zai)、短(duan)路的(de)檢(jian)測(ce)(ce)(ce)(ce)，并保護充電(dian)(dian)(dian)及(ji)放電(dian)(dian)(dian)MOSFET、電(dian)(dian)(dian)池單(dan)元以及(ji)其它線路上(shang)的(de)元件，避(bi)免過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)流狀態(tai)。過(guo)(guo)(guo)(guo)載(zai)(zai)檢(jian)測(ce)(ce)(ce)(ce)用于檢(jian)測(ce)(ce)(ce)(ce)電(dian)(dian)(dian)池放電(dian)(dian)(dian)流向(xiang)上(shang)的(de)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)流（OC），同時，短(duan)路（SC）檢(jian)測(ce)(ce)(ce)(ce)用于檢(jian)測(ce)(ce)(ce)(ce)充電(dian)(dian)(dian)及(ji)放電(dian)(dian)(dian)流向(xiang)上(shang)的(de)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)流。AFE電(dian)(dian)(dian)路的(de)過(guo)(guo)(guo)(guo)載(zai)(zai)和短(duan)路限定(ding)以及(ji)延(yan)遲時間(jian)均可通過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)量計數據閃存編程(cheng)設(she)定(ding)。當檢(jian)測(ce)(ce)(ce)(ce)到過(guo)(guo)(guo)(guo)載(zai)(zai)或短(duan)路狀態(tai)，且達到了程(cheng)序設(she)定(ding)的(de)延(yan)遲時間(jian)，則充電(dian)(dian)(dian)及(ji)放電(dian)(dian)(dian)MOSFET Q1及(ji)Q2將(jiang)(jiang)被關閉，詳細的(de)狀態(tai)信息將(jiang)(jiang)存儲(chu)于AFE的(de)狀態(tai)寄(ji)存器，從(cong)而電(dian)(dian)(dian)量計可讀取(qu)并調(diao)查導致故障的(de)原因。

對于計量2、3或4個鋰離子電池包的(de)(de)(de)電(dian)(dian)量計芯片集(ji)解(jie)決方案來(lai)說，AFE起了(le)很重要(yao)的(de)(de)(de)作用(yong)。AFE提供(gong)了(le)所需的(de)(de)(de)所有(you)高壓接(jie)口以及硬(ying)件電(dian)(dian)流保護(hu)特性(xing)(xing)。所提供(gong)的(de)(de)(de)I2C兼(jian)容接(jie)口允(yun)許電(dian)(dian)量計訪問(wen)AFE寄存器并配(pei)置AFE的(de)(de)(de)保護(hu)特性(xing)(xing)。AFE還集(ji)成了(le)電(dian)(dian)池單(dan)元(yuan)平(ping)(ping)衡(heng)控制(zhi)。多數情(qing)況下，在多單(dan)元(yuan)電(dian)(dian)池包中，每個獨立(li)電(dian)(dian)池單(dan)元(yuan)的(de)(de)(de)電(dian)(dian)荷狀態（SOC）彼(bi)此不(bu)同，從而導致了(le)不(bu)平(ping)(ping)衡(heng)單(dan)元(yuan)間的(de)(de)(de)電(dian)(dian)壓差別。AFE針對每一(yi)的(de)(de)(de)電(dian)(dian)池單(dan)元(yuan)整合了(le)旁通通路。此類旁通通路可用(yong)于降低至每一(yi)單(dan)元(yuan)的(de)(de)(de)充(chong)電(dian)(dian)電(dian)(dian)流，從而為電(dian)(dian)池單(dan)元(yuan)充(chong)電(dian)(dian)期間的(de)(de)(de)SOC平(ping)(ping)衡(heng)提供(gong)了(le)條件。基于阻(zu)抗追蹤電(dian)(dian)量計對每一(yi)電(dian)(dian)池單(dan)元(yuan)化學電(dian)(dian)荷狀態的(de)(de)(de)確(que)定，可在需要(yao)單(dan)元(yuan)平(ping)(ping)衡(heng)時(shi)做出正確(que)的(de)(de)(de)決策。

       具有不同(tong)激(ji)活時間(jian)的多極(ji)過(guo)電流保(bao)護(hu)限(xian)（如圖2所(suo)示）使得電池(chi)包保(bao)護(hu)更為強健。電量計(ji)具有兩(liang)層的充電/放(fang)電過(guo)電流保(bao)護(hu)設定，而AFE則(ze)提供(gong)了第(di)三層的放(fang)電過(guo)電流保(bao)護(hu)。在短路狀態下(xia)，MOSFET及電池(chi)可能在數秒內毀壞，電量計(ji)芯片集完全依靠AFE來自(zi)動的關斷MOSFET，以免產生毀壞。

當電(dian)(dian)(dian)(dian)量(liang)計(ji)IC及(ji)其所關(guan)聯的(de)(de)AFE提供過(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)保(bao)(bao)護(hu)(hu)時，電(dian)(dian)(dian)(dian)壓(ya)(ya)監測的(de)(de)采樣(yang)特性限(xian)制(zhi)了(le)此類保(bao)(bao)護(hu)(hu)系統的(de)(de)響應(ying)時間。絕大多數應(ying)用(yong)要求能快速響應(ying)，且實時、獨立的(de)(de)過(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)監測器(qi)(qi)，并與電(dian)(dian)(dian)(dian)量(liang)計(ji)、AFE協同運作。該監測器(qi)(qi)獨立于(yu)(yu)電(dian)(dian)(dian)(dian)量(liang)計(ji)及(ji)AFE，監測每(mei)一(yi)電(dian)(dian)(dian)(dian)池單元(yuan)的(de)(de)電(dian)(dian)(dian)(dian)壓(ya)(ya)，并針對(dui)每(mei)一(yi)達到(dao)硬(ying)件(jian)編碼過(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)限(xian)的(de)(de)電(dian)(dian)(dian)(dian)池單元(yuan)提供邏輯電(dian)(dian)(dian)(dian)平輸出(chu)。過(guo)電(dian)(dian)(dian)(dian)壓(ya)(ya)保(bao)(bao)護(hu)(hu)的(de)(de)響應(ying)時間取決(jue)于(yu)(yu)外部延遲電(dian)(dian)(dian)(dian)容的(de)(de)大小。在典型的(de)(de)應(ying)用(yong)中，秒量(liang)級保(bao)(bao)護(hu)(hu)器(qi)(qi)的(de)(de)輸出(chu)將(jiang)(jiang)觸發化(hua)學保(bao)(bao)險(xian)絲(si)或其它失效(xiao)保(bao)(bao)護(hu)(hu)設備，以永久性的(de)(de)將(jiang)(jiang)鋰(li)離(li)子電(dian)(dian)(dian)(dian)池與系統分離(li)。

電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)包(bao)(bao)永(yong)(yong)久(jiu)(jiu)性(xing)(xing)的(de)(de)(de)(de)失效(xiao)(xiao)(xiao)保(bao)護(hu)(hu)對于(yu)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)管(guan)(guan)理單元來說，很重要的(de)(de)(de)(de)一點是要為(wei)非正(zheng)常(chang)狀態(tai)下(xia)(xia)的(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)包(bao)(bao)提(ti)供(gong)趨于(yu)保(bao)守的(de)(de)(de)(de)關(guan)斷。永(yong)(yong)久(jiu)(jiu)性(xing)(xing)的(de)(de)(de)(de)失效(xiao)(xiao)(xiao)保(bao)護(hu)(hu)包(bao)(bao)括了過電(dian)(dian)(dian)(dian)(dian)流(liu)的(de)(de)(de)(de)放電(dian)(dian)(dian)(dian)(dian)及(ji)充(chong)電(dian)(dian)(dian)(dian)(dian)故(gu)(gu)(gu)(gu)障(zhang)狀態(tai)下(xia)(xia)的(de)(de)(de)(de)安(an)全(quan)、過熱的(de)(de)(de)(de)放電(dian)(dian)(dian)(dian)(dian)及(ji)充(chong)電(dian)(dian)(dian)(dian)(dian)狀態(tai)下(xia)(xia)的(de)(de)(de)(de)安(an)全(quan)、過電(dian)(dian)(dian)(dian)(dian)壓(ya)的(de)(de)(de)(de)故(gu)(gu)(gu)(gu)障(zhang)狀態(tai)（峰(feng)值電(dian)(dian)(dian)(dian)(dian)壓(ya)）以及(ji)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)平衡故(gu)(gu)(gu)(gu)障(zhang)、短接放電(dian)(dian)(dian)(dian)(dian)FET故(gu)(gu)(gu)(gu)障(zhang)、充(chong)電(dian)(dian)(dian)(dian)(dian)MOSFET故(gu)(gu)(gu)(gu)障(zhang)狀態(tai)下(xia)(xia)的(de)(de)(de)(de)安(an)全(quan)。制造商可選擇任(ren)(ren)意組合(he)上述的(de)(de)(de)(de)永(yong)(yong)久(jiu)(jiu)性(xing)(xing)失效(xiao)(xiao)(xiao)保(bao)護(hu)(hu)。當檢測(ce)到任(ren)(ren)意的(de)(de)(de)(de)此類故(gu)(gu)(gu)(gu)障(zhang)，則保(bao)護(hu)(hu)設備將(jiang)熔斷化(hua)學保(bao)險(xian)絲，以使得(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)包(bao)(bao)永(yong)(yong)久(jiu)(jiu)性(xing)(xing)的(de)(de)(de)(de)失效(xiao)(xiao)(xiao)。作為(wei)電(dian)(dian)(dian)(dian)(dian)子元件故(gu)(gu)(gu)(gu)障(zhang)的(de)(de)(de)(de)外部失效(xiao)(xiao)(xiao)驗證，電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)管(guan)(guan)理單元設計用于(yu)檢測(ce)充(chong)電(dian)(dian)(dian)(dian)(dian)及(ji)放電(dian)(dian)(dian)(dian)(dian)MOSFET Q1及(ji)Q2的(de)(de)(de)(de)失效(xiao)(xiao)(xiao)與否。如果任(ren)(ren)意充(chong)電(dian)(dian)(dian)(dian)(dian)或(huo)放電(dian)(dian)(dian)(dian)(dian)MOSFET短路，則化(hua)學保(bao)險(xian)絲也將(jiang)熔斷。

      據報道，電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)內(nei)部(bu)(bu)的(de)微(wei)小短(duan)路(lu)也是導致近期多起電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)召回(hui)的(de)主要原因。如(ru)何(he)檢(jian)測(ce)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)內(nei)部(bu)(bu)的(de)微(wei)小短(duan)路(lu)并(bing)防止(zhi)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)著火乃至(zhi)爆炸呢？外(wai)殼封閉(bi)處理過程中，金屬(shu)微(wei)粒及其(qi)它雜質有(you)可能(neng)污染電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)內(nei)部(bu)(bu)，從(cong)而(er)(er)引(yin)起電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)內(nei)部(bu)(bu)的(de)微(wei)小短(duan)路(lu)。內(nei)部(bu)(bu)的(de)微(wei)小短(duan)路(lu)將(jiang)(jiang)極大(da)地(di)增加(jia)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)自(zi)放電(dian)(dian)(dian)(dian)(dian)速率(lv)，使得開(kai)(kai)(kai)(kai)路(lu)電(dian)(dian)(dian)(dian)(dian)壓(ya)較之正常狀態下的(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單元有(you)所降(jiang)低。阻抗追蹤電(dian)(dian)(dian)(dian)(dian)量計監測(ce)開(kai)(kai)(kai)(kai)路(lu)電(dian)(dian)(dian)(dian)(dian)壓(ya)，并(bing)從(cong)而(er)(er)檢(jian)測(ce)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單元的(de)非(fei)均衡(heng)性――當(dang)不(bu)同電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單元的(de)開(kai)(kai)(kai)(kai)路(lu)電(dian)(dian)(dian)(dian)(dian)壓(ya)差(cha)異超過預先設置(zhi)的(de)限定值。當(dang)出現此類(lei)失效時，將(jiang)(jiang)產生永久(jiu)性失效的(de)告警并(bing)斷開(kai)(kai)(kai)(kai)MOSFET，化學保險絲也可配(pei)置(zhi)為(wei)熔(rong)斷。上述(shu)行為(wei)將(jiang)(jiang)使得電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)包無法作為(wei)供電(dian)(dian)(dian)(dian)(dian)源(yuan)并(bing)因此屏蔽了電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)包內(nei)部(bu)(bu)的(de)微(wei)小短(duan)路(lu)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)單元，從(cong)而(er)(er)防止(zhi)了災害的(de)發(fa)生。

小結

電(dian)池(chi)管(guan)理(li)單(dan)元(yuan)對于確保終端(duan)用戶(hu)的(de)安全性是至(zhi)關重要的(de)。強健(jian)的(de)多極保護――過(guo)(guo)電(dian)壓(ya)、過(guo)(guo)電(dian)流、過(guo)(guo)熱、電(dian)池(chi)單(dan)元(yuan)非均衡以及MOSFET失效監測，極大(da)地改善了電(dian)池(chi)包(bao)的(de)安全性。通過(guo)(guo)監測電(dian)池(chi)單(dan)元(yuan)的(de)開環電(dian)壓(ya)，阻抗追蹤技術可檢測電(dian)池(chi)內部(bu)的(de)微(wei)小短路，并進(jin)而永(yong)久性的(de)失效電(dian)池(chi)，確保了終端(duan)用戶(hu)的(de)安全。