，一(yi)個控(kong)制規(gui)(gui)則表中會出現(xian)空項,這(zhe)是不能滿足實際(ji)控(kong)制要求的(de)。為(wei)了取得更滿意的(de)控(kong)制效果(guo)，可以(yi)對(dui)原始的(de)控(kong)制規(gui)(gui)則進行改進。這(zhe)時，應以(yi)粗糙的(de)控(kong)制規(gui)(gui)則為(wei)基(ji)礎，通過仿真(zhen)實驗和系統調試加以(yi)完(wan)善。

4.模糊智(zhi)能充電(dian)系統的工作原理及結構

智能充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)系統主要(yao)由充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)源和單(dan)片機(ji)(ji)控(kong)(kong)制(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路兩部分組成。220V的(de)(de)交(jiao)流(liu)市電(dian)(dian)(dian)(dian)(dian)(dian)(dian)經(jing)整流(liu)濾波(bo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路變為(wei)脈動的(de)(de)310V高(gao)壓(ya)(ya)(ya)直(zhi)流(liu)。然(ran)后(hou)經(jing)DC-DC變換電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路（脈沖功(gong)率變壓(ya)(ya)(ya)器）變為(wei)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)所需的(de)(de)60V直(zhi)流(liu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)。為(wei)了(le)保證輸出電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)的(de)(de)穩定性，采(cai)(cai)用(yong)了(le)UC3842對60V直(zhi)流(liu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)進行穩壓(ya)(ya)(ya)。二次斬(zhan)波(bo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路主要(yao)由MOSFET管、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)感(gan)、電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容和二極管組成，輸出24-36V的(de)(de)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)。控(kong)(kong)制(zhi)部分采(cai)(cai)用(yong)C504單(dan)片機(ji)(ji)，通過對蓄電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池端(duan)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)信號的(de)(de)采(cai)(cai)集(ji)、分析處理(li)、模糊(hu)推(tui)理(li)[8]、模糊(hu)決策等，控(kong)(kong)制(zhi)二次斬(zhan)波(bo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路中的(de)(de)MOSFET管的(de)(de)通斷(duan)時間來控(kong)(kong)制(zhi)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)。控(kong)(kong)制(zhi)部分還(huan)包括對電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)和溫(wen)度的(de)(de)采(cai)(cai)集(ji)以及電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)和電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)的(de)(de)顯示。總(zong)體結構如圖3所示。

圖3 智能(neng)充電系統總體(ti)結構框(kuang)圖

5 蓄電(dian)池(chi)的(de)(de)充(chong)放電(dian)過程(cheng)是一個(ge)復雜的(de)(de)過程(cheng)，要用精確數學模型對蓄電(dian)池(chi)充(chong)電(dian)的(de)(de)控制(zhi)則有(you)相當的(de)(de)難度(du)。蓄電(dian)池(chi)的(de)(de)充(chong)電(dian)控制(zhi)系統是個(ge)非線性的(de)(de)、時變(bian)的(de)(de)、有(you)干擾的(de)(de)、具(ju)有(you)純滯后的(de)(de)控制(zhi)系統，在充(chong)放電(dian)過程(cheng)中涉及到很多參數，如充(chong)電(dian)率、最大允許(xu)充(chong)電(dian)電(dian)流、內阻、出氣點電(dian)壓、溫度(du)、壽命(ming)等。

   作(zuo)者創新點為：

(1) 隸(li)屬函(han)數 的(de)形狀，對控制(zhi)效果影響較大(da)。窄型隸(li)屬函(han)數，反映模糊(hu)集(ji)合(he)具有(you)高(gao)(gao)分辨特(te)性(xing)。如(ru)果系(xi)統誤差，采(cai)用高(gao)(gao)分辨率(lv)(lv)模糊(hu)集(ji)合(he)，則誤差控制(zhi)的(de)靈(ling)敏度(du)就會提高(gao)(gao)。在(zai)系(xi)統誤差較大(da)的(de)范圍內，采(cai)用具有(you)低分辨率(lv)(lv)隸(li)屬函(han)數的(de)模糊(hu)集(ji)合(he)；而(er)在(zai)系(xi)統誤差較小，或接近于(yu)零時，宜采(cai)用具有(you)高(gao)(gao)分辨率(lv)(lv)隸(li)屬函(han)數的(de)模糊(hu)集(ji)合(he)。

(2)在定義(yi)某一語(yu)言(yan)(yan)變(bian)(bian)量，如誤差(cha)(cha)、誤差(cha)(cha)變(bian)(bian)化(hua)率和控制量變(bian)(bian)化(hua)的(de)全部集合時，要考(kao)慮(lv)其對論域[-n,+n]的(de)覆(fu)蓋程度，語(yu)言(yan)(yan)變(bian)(bian)量的(de)全部模糊(hu)集合所包含的(de)非零隸屬度對應的(de)論域元素個數，應是模糊(hu)集合總(zong)數的(de)3-4倍。

，將模糊(hu)控(kong)制(zhi)表格中(zhong)的數據存(cun)儲(chu)于微控(kong)制(zhi)器外部(bu)存(cun)儲(chu)空(kong)間中(zhong)，基本上克(ke)服(fu)了這(zhe)個缺點(dian)。芯片電可(ke)擦除(chu)X5045）查(cha)表法作為模糊(hu)控(kong)制(zhi)算法有(you)表格結構單一，修改(gai)繁瑣，缺乏靈活性的缺點(dian)。針對使用(yong)查(cha)表法作為模糊(hu)控(kong)制(zhi)算法暴(bao)露的缺點(dian)，在硬件(jian)設計中(zhong)與以補(bu)償，加入了一片