，一個控(kong)制(zhi)規則表中會出(chu)現空項(xiang),這(zhe)(zhe)是不能(neng)滿足(zu)實(shi)際控(kong)制(zhi)要求的(de)(de)。為了取得(de)更(geng)滿意(yi)的(de)(de)控(kong)制(zhi)效果，可以對原始的(de)(de)控(kong)制(zhi)規則進行改進。這(zhe)(zhe)時，應以粗糙(cao)的(de)(de)控(kong)制(zhi)規則為基(ji)礎，通過仿真實(shi)驗和系統(tong)調試加以完(wan)善。

4.模(mo)糊智能充電系統的工作原理及結構(gou)

智能(neng)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)系統主要由充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)源和單(dan)(dan)片(pian)(pian)機(ji)控(kong)制(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)路兩部(bu)分組(zu)成。220V的(de)(de)(de)(de)(de)(de)交流(liu)(liu)市(shi)電(dian)(dian)(dian)(dian)(dian)(dian)經整流(liu)(liu)濾波(bo)(bo)電(dian)(dian)(dian)(dian)(dian)(dian)路變(bian)為(wei)脈動的(de)(de)(de)(de)(de)(de)310V高壓(ya)(ya)直(zhi)(zhi)流(liu)(liu)。然(ran)后經DC-DC變(bian)換電(dian)(dian)(dian)(dian)(dian)(dian)路（脈沖功率變(bian)壓(ya)(ya)器）變(bian)為(wei)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)所需的(de)(de)(de)(de)(de)(de)60V直(zhi)(zhi)流(liu)(liu)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)。為(wei)了保證(zheng)輸出電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)的(de)(de)(de)(de)(de)(de)穩(wen)定性，采(cai)用了UC3842對(dui)60V直(zhi)(zhi)流(liu)(liu)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)進行穩(wen)壓(ya)(ya)。二(er)次斬波(bo)(bo)電(dian)(dian)(dian)(dian)(dian)(dian)路主要由MOSFET管、電(dian)(dian)(dian)(dian)(dian)(dian)感、電(dian)(dian)(dian)(dian)(dian)(dian)容和二(er)極管組(zu)成，輸出24-36V的(de)(de)(de)(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)。控(kong)制(zhi)部(bu)分采(cai)用C504單(dan)(dan)片(pian)(pian)機(ji)，通(tong)過對(dui)蓄電(dian)(dian)(dian)(dian)(dian)(dian)池端電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)信號的(de)(de)(de)(de)(de)(de)采(cai)集、分析處理(li)、模糊推理(li)[8]、模糊決策等，控(kong)制(zhi)二(er)次斬波(bo)(bo)電(dian)(dian)(dian)(dian)(dian)(dian)路中的(de)(de)(de)(de)(de)(de)MOSFET管的(de)(de)(de)(de)(de)(de)通(tong)斷時(shi)間(jian)來控(kong)制(zhi)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)。控(kong)制(zhi)部(bu)分還(huan)包括對(dui)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)和溫度的(de)(de)(de)(de)(de)(de)采(cai)集以及電(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)和電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)的(de)(de)(de)(de)(de)(de)顯示。總體結構(gou)如圖(tu)3所示。

圖(tu)3 智能充電系統總體(ti)結構框(kuang)圖(tu)

5 蓄電(dian)(dian)池的(de)(de)充(chong)放(fang)電(dian)(dian)過(guo)程是(shi)一個(ge)(ge)復雜的(de)(de)過(guo)程，要用(yong)精確數(shu)學模型對蓄電(dian)(dian)池充(chong)電(dian)(dian)的(de)(de)控制(zhi)(zhi)則有相當的(de)(de)難度。蓄電(dian)(dian)池的(de)(de)充(chong)電(dian)(dian)控制(zhi)(zhi)系統是(shi)個(ge)(ge)非線性(xing)的(de)(de)、時變的(de)(de)、有干擾的(de)(de)、具有純滯后的(de)(de)控制(zhi)(zhi)系統，在充(chong)放(fang)電(dian)(dian)過(guo)程中(zhong)涉及到很多參數(shu)，如充(chong)電(dian)(dian)率、最(zui)大(da)允(yun)許充(chong)電(dian)(dian)電(dian)(dian)流、內阻、出氣(qi)點電(dian)(dian)壓、溫度、壽命(ming)等。

   作者創新點為：

(1) 隸屬函數 的(de)形狀(zhuang)，對(dui)控(kong)制(zhi)(zhi)效果影響較大。窄型隸屬函數，反映(ying)模糊(hu)(hu)集(ji)合具(ju)有(you)高(gao)(gao)分(fen)(fen)(fen)辨特性(xing)。如果系(xi)(xi)統(tong)誤(wu)差(cha)(cha)，采用高(gao)(gao)分(fen)(fen)(fen)辨率模糊(hu)(hu)集(ji)合，則誤(wu)差(cha)(cha)控(kong)制(zhi)(zhi)的(de)靈敏(min)度就(jiu)會提高(gao)(gao)。在系(xi)(xi)統(tong)誤(wu)差(cha)(cha)較大的(de)范圍內，采用具(ju)有(you)低分(fen)(fen)(fen)辨率隸屬函數的(de)模糊(hu)(hu)集(ji)合；而(er)在系(xi)(xi)統(tong)誤(wu)差(cha)(cha)較小，或接近(jin)于零(ling)時，宜采用具(ju)有(you)高(gao)(gao)分(fen)(fen)(fen)辨率隸屬函數的(de)模糊(hu)(hu)集(ji)合。

(2)在定義某一語言(yan)(yan)變(bian)量(liang)，如誤差(cha)、誤差(cha)變(bian)化(hua)率和控制量(liang)變(bian)化(hua)的(de)(de)全部集合時，要(yao)考(kao)慮其對論(lun)域[-n,+n]的(de)(de)覆蓋(gai)程(cheng)度(du)，語言(yan)(yan)變(bian)量(liang)的(de)(de)全部模糊集合所包含的(de)(de)非零隸屬度(du)對應(ying)(ying)的(de)(de)論(lun)域元素(su)個數(shu)，應(ying)(ying)是模糊集合總(zong)數(shu)的(de)(de)3-4倍。

，將模(mo)糊(hu)控(kong)制(zhi)表(biao)(biao)格(ge)中(zhong)的數據存儲(chu)于微控(kong)制(zhi)器外部存儲(chu)空間(jian)中(zhong)，基本上克(ke)服了這個缺(que)(que)(que)點(dian)。芯片電可擦除X5045）查表(biao)(biao)法(fa)(fa)作為模(mo)糊(hu)控(kong)制(zhi)算(suan)法(fa)(fa)有表(biao)(biao)格(ge)結(jie)構單(dan)一，修改繁瑣，缺(que)(que)(que)乏靈(ling)活性的缺(que)(que)(que)點(dian)。針對使用(yong)查表(biao)(biao)法(fa)(fa)作為模(mo)糊(hu)控(kong)制(zhi)算(suan)法(fa)(fa)暴露的缺(que)(que)(que)點(dian)，在硬件設計(ji)中(zhong)與以補(bu)償，加(jia)入了一片