太陽能手機充電器的制作方法 本文介紹一種太陽能手機充電器，它使用太(tai)陽能(neng)電(dian)池板，經電(dian)路進行直(zhi)流電(dian)壓變(bian)換(huan)后給手機電(dian)池充(chong)電(dian)，并能(neng)在電(dian)池充(chong)電(dian)完(wan)成后自(zi)動停止(zhi)充(chong)電(dian)。

    太陽(yang)能(neng)手(shou)機充電(dian)(dian)電(dian)(dian)路(lu)及工作原(yuan)理 太陽(yang)能(neng)電(dian)(dian)池在使用時(shi)由于太陽(yang)光(guang)的變(bian)化(hua)較(jiao)大，其內(nei)阻又比較(jiao)高(gao)(gao)，因此輸(shu)出電(dian)(dian)壓(ya)不穩定，輸(shu)出電(dian)(dian)流(liu)也小，這就需要用一個直流(liu)變(bian)換(huan)電(dian)(dian)路(lu)變(bian)換(huan)電(dian)(dian)壓(ya)后供手(shou)機電(dian)(dian)池充電(dian)(dian)，直流(liu)變(bian)換(huan)電(dian)(dian)路(lu)見圖1，它是(shi)單管(guan)(guan)(guan)直流(liu)變(bian)換(huan)電(dian)(dian)路(lu)，采用單端反(fan)激式變(bian)換(huan)器(qi)電(dian)(dian)路(lu)的形式。當開關管(guan)(guan)(guan)VT1導通時(shi)，高(gao)(gao)頻(pin)變(bian)壓(ya)器(qi)T1初級(ji)線(xian)圈(quan)(quan)NP的感應電(dian)(dian)壓(ya)為1正2負(fu)，次級(ji)線(xian)圈(quan)(quan)Ns為5正6負(fu)，整(zheng)(zheng)流(liu)二極管(guan)(guan)(guan)VD1處于截止狀態，這時(shi)高(gao)(gao)頻(pin)變(bian)壓(ya)器(qi)T1通過初級(ji)線(xian)圈(quan)(quan)Np儲存(cun)能(neng)量(liang)；當開關管(guan)(guan)(guan)VT1截止時(shi)，次級(ji)線(xian)圈(quan)(quan)Ns為5負(fu)6正，高(gao)(gao)頻(pin)變(bian)壓(ya)器(qi)T1中存(cun)儲的能(neng)量(liang)通過VD1整(zheng)(zheng)流(liu)和電(dian)(dian)容(rong)C3濾波后向負(fu)載(zai)輸(shu)出。

   電(dian)(dian)(dian)(dian)路工作原理(li)簡(jian)述(shu)如下(xia)： 三極(ji)管VT1為開關電(dian)(dian)(dian)(dian)源管，它和(he)T1、R1、R3、C2等組(zu)成自激式振蕩電(dian)(dian)(dian)(dian)路。加(jia)上(shang)輸入電(dian)(dian)(dian)(dian)源后(hou)，電(dian)(dian)(dian)(dian)流(liu)(liu)經啟動電(dian)(dian)(dian)(dian)阻(zu)R1流(liu)(liu)向(xiang)(xiang)VT1的(de)(de)(de)基(ji)(ji)極(ji)，使(shi)(shi)VT1導通。 VT1導通后(hou)，變壓(ya)(ya)器初(chu)級線(xian)圈(quan)Np就加(jia)上(shang)輸入直流(liu)(liu)電(dian)(dian)(dian)(dian)壓(ya)(ya)，其(qi)集電(dian)(dian)(dian)(dian)極(ji)電(dian)(dian)(dian)(dian)流(liu)(liu)Ic在(zai)Np中線(xian)性增(zeng)長，反饋(kui)線(xian)圈(quan)Nb產(chan)生(sheng)3正(zheng)(zheng)4負(fu)的(de)(de)(de)感應電(dian)(dian)(dian)(dian)壓(ya)(ya)，使(shi)(shi)VT1得到基(ji)(ji)極(ji)為正(zheng)(zheng)，發射極(ji)為負(fu)的(de)(de)(de)正(zheng)(zheng)反饋(kui)電(dian)(dian)(dian)(dian)壓(ya)(ya)，此(ci)電(dian)(dian)(dian)(dian)壓(ya)(ya)經C2、R3向(xiang)(xiang)VT1注(zhu)入基(ji)(ji)極(ji)電(dian)(dian)(dian)(dian)流(liu)(liu)使(shi)(shi)VT1的(de)(de)(de)集電(dian)(dian)(dian)(dian)極(ji)電(dian)(dian)(dian)(dian)流(liu)(liu)進(jin)(jin)一(yi)(yi)步增(zeng)大(da)，正(zheng)(zheng)反饋(kui)產(chan)生(sheng)雪崩(beng)過(guo)程(cheng)(cheng)，使(shi)(shi)VT1飽(bao)(bao)和(he)導通。在(zai)VT1飽(bao)(bao)和(he)導通期間(jian)，T1通過(guo)初(chu)級線(xian)圈(quan)Np儲存磁能(neng)。 與此(ci)同時(shi)，感應電(dian)(dian)(dian)(dian)壓(ya)(ya)給C2充電(dian)(dian)(dian)(dian)，隨著C2充電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)壓(ya)(ya)的(de)(de)(de)增(zeng)高(gao)，VT1基(ji)(ji)極(ji)電(dian)(dian)(dian)(dian)位逐漸變低，當VT1的(de)(de)(de)基(ji)(ji)極(ji)電(dian)(dian)(dian)(dian)流(liu)(liu)變化不(bu)能(neng)滿足其(qi)繼續飽(bao)(bao)和(he)時(shi)，VT1 退出飽(bao)(bao)和(he)區進(jin)(jin)入放(fang)大(da)區。 VT1進(jin)(jin)入放(fang)大(da)狀態后(hou)，其(qi)集電(dian)(dian)(dian)(dian)極(ji)電(dian)(dian)(dian)(dian)流(liu)(liu)由放(fang)大(da)狀態前的(de)(de)(de)最(zui)大(da)值下(xia)降，在(zai)反饋(kui)線(xian)圈(quan)Nb產(chan)生(sheng)3負(fu)4正(zheng)(zheng)的(de)(de)(de)感應電(dian)(dian)(dian)(dian)壓(ya)(ya)，使(shi)(shi)VT1基(ji)(ji)極(ji)電(dian)(dian)(dian)(dian)流(liu)(liu)減(jian)小，其(qi)集電(dian)(dian)(dian)(dian)極(ji)電(dian)(dian)(dian)(dian)流(liu)(liu)隨之減(jian)小，正(zheng)(zheng)反饋(kui)再一(yi)(yi)次(ci)出現雪崩(beng)過(guo)程(cheng)(cheng)，VT1迅速截止(zhi)。

    VT1截(jie)止后(hou)，變(bian)壓(ya)器T1儲(chu)存的(de)能量提供(gong)給(gei)(gei)負(fu)(fu)載(zai)，次(ci)級線圈Ns產生的(de)5負(fu)(fu)6正的(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)經二極(ji)(ji)(ji)管VD1整流濾波后(hou)，在(zai)C3上得到直流電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)給(gei)(gei)手機(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。 在(zai)VT1截(jie)止時，直流供(gong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)輸(shu)人電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)和Nb感應的(de)3負(fu)(fu)4正的(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)又經R1、R3給(gei)(gei)C2反向充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，逐漸提高VT1基極(ji)(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)位，使其(qi)重(zhong)新導通(tong)，再次(ci)翻(fan)轉達到飽和狀態，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)就這(zhe)樣重(zhong)復振(zhen)蕩下去(qu)。 R5、R6、VD2、VT2等組成限(xian)(xian)(xian)壓(ya)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)，以(yi)保護電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)不被過(guo)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，這(zhe)里以(yi)3.6V手機(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)為例，其(qi)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)限(xian)(xian)(xian)制(zhi)(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)為4.2V。在(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)過(guo)程(cheng)中(zhong)，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)逐漸上升，當(dang)充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)大于4.2V時，經R5、R6分壓(ya)后(hou)穩壓(ya)二極(ji)(ji)(ji)管VD2開始導通(tong)，使VT2導通(tong)，VT2的(de)分流作用減小了VT1的(de)基極(ji)(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流，從(cong)而減小了VT1的(de)集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流Ic，達到了限(xian)(xian)(xian)制(zhi)(zhi)輸(shu)出電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)的(de)作用。這(zhe)時電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)停止了對電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)大電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，用小電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流將電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)維持在(zai)4.2V。

    元器件選擇和安裝調試 VT1要(yao)(yao)求Icm＞0.5A，hEF為50-100，可用2SC2500、2SC1008等，VD1為穩壓值為3V的穩壓二極(ji)管。 高頻變(bian)壓器T1要(yao)(yao)自制，用E16的鐵(tie)氧(yang)體磁芯，Np用φ0.21漆包線(xian)繞(rao)26匝(za)，Nb用φ0.21漆包線(xian)繞(rao)8匝(za)，Ns用φ0.41漆包線(xian)繞(rao)15匝(za)。繞(rao)制時(shi)要(yao)(yao)注意各線(xian)圈的起始(shi)端不(bu)要(yao)(yao)搞(gao)錯(cuo)，以(yi)免電路不(bu)起振或輸出電壓不(bu)正(zheng)常。

    組(zu)裝時在(zai)兩塊(kuai)磁(ci)芯間墊(dian)一層厚度約為(wei)(wei)0.03mm的(de)(de)(de)塑料薄膜(mo)作磁(ci)芯氣隙。 太(tai)(tai)陽(yang)(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池板(ban)使用4塊(kuai)面積為(wei)(wei)6cm×6cm的(de)(de)(de)硅太(tai)(tai)陽(yang)(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池板(ban)，其(qi)空(kong)載(zai)輸(shu)(shu)(shu)出(chu)(chu)電(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)為(wei)(wei)4V，當工作電(dian)(dian)(dian)(dian)流為(wei)(wei)40mA時輸(shu)(shu)(shu)出(chu)(chu)電(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)為(wei)(wei)3V。由(you)于直流變換器(qi)的(de)(de)(de)工作效率(lv)隨(sui)著輸(shu)(shu)(shu)入電(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)的(de)(de)(de)的(de)(de)(de)增高(gao)而(er)增高(gao)，因此4塊(kuai)太(tai)(tai)陽(yang)(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池板(ban)串(chuan)聯后(hou)使用，這時電(dian)(dian)(dian)(dian)路的(de)(de)(de)輸(shu)(shu)(shu)入電(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)為(wei)(wei)12V。讀者可(ke)根據你能(neng)購到的(de)(de)(de)太(tai)(tai)陽(yang)(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池板(ban)規格決定(ding)使用的(de)(de)(de)數量和(he)聯接方(fang)法。 其(qi)它元件的(de)(de)(de)參數見(jian)圖(tu)1。 印刷電(dian)(dian)(dian)(dian)路板(ban)見(jian)圖(tu)2，尺寸為(wei)(wei)45×26mm2。 安裝完成后(hou)，接上太(tai)(tai)陽(yang)(yang)(yang)能(neng)電(dian)(dian)(dian)(dian)池板(ban)，并(bing)將其(qi)放在(zai)陽(yang)(yang)(yang)光下，空(kong)載(zai)時電(dian)(dian)(dian)(dian)路輸(shu)(shu)(shu)出(chu)(chu)電(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)約為(wei)(wei)4.2V，當空(kong)載(zai)輸(shu)(shu)(shu)出(chu)(chu)電(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)高(gao)于4.2V時可(ke)適當減小R5的(de)(de)(de)阻值,反之(zhi)增加R5的(de)(de)(de)阻值。電(dian)(dian)(dian)(dian)路工作電(dian)(dian)(dian)(dian)流跟太(tai)(tai)陽(yang)(yang)(yang)光的(de)(de)(de)強弱有關，正常時約為(wei)(wei)40mA，這時充電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)流約為(wei)(wei)85mA。