太陽能手機充電器制作方法
太陽能手機充電器的制作方法 本文介紹一種太陽能手機充電器,它使用太陽能電(dian)(dian)(dian)(dian)池(chi)(chi)板,經電(dian)(dian)(dian)(dian)路進行直流電(dian)(dian)(dian)(dian)壓變換后給手機電(dian)(dian)(dian)(dian)池(chi)(chi)充電(dian)(dian)(dian)(dian),并能在電(dian)(dian)(dian)(dian)池(chi)(chi)充電(dian)(dian)(dian)(dian)完成后自動停(ting)止充電(dian)(dian)(dian)(dian)。
太陽能手(shou)機充(chong)電(dian)(dian)(dian)電(dian)(dian)(dian)路(lu)(lu)(lu)及(ji)工作原理(li) 太陽能電(dian)(dian)(dian)池(chi)在使用時(shi)由(you)于(yu)太陽光的(de)變化(hua)較(jiao)大(da),其內阻又比較(jiao)高,因此(ci)輸出電(dian)(dian)(dian)壓(ya)(ya)不穩(wen)定,輸出電(dian)(dian)(dian)流(liu)也(ye)小(xiao),這(zhe)就(jiu)需要用一個直流(liu)變換(huan)電(dian)(dian)(dian)路(lu)(lu)(lu)變換(huan)電(dian)(dian)(dian)壓(ya)(ya)后(hou)供手(shou)機電(dian)(dian)(dian)池(chi)充(chong)電(dian)(dian)(dian),直流(liu)變換(huan)電(dian)(dian)(dian)路(lu)(lu)(lu)見圖1,它是單管(guan)直流(liu)變換(huan)電(dian)(dian)(dian)路(lu)(lu)(lu),采用單端反激式(shi)變換(huan)器電(dian)(dian)(dian)路(lu)(lu)(lu)的(de)形(xing)式(shi)。當(dang)開(kai)關(guan)管(guan)VT1導通時(shi),高頻變壓(ya)(ya)器T1初級(ji)線(xian)圈(quan)NP的(de)感應電(dian)(dian)(dian)壓(ya)(ya)為1正(zheng)2負(fu)(fu),次(ci)(ci)級(ji)線(xian)圈(quan)Ns為5正(zheng)6負(fu)(fu),整(zheng)流(liu)二極管(guan)VD1處于(yu)截(jie)止狀態,這(zhe)時(shi)高頻變壓(ya)(ya)器T1通過初級(ji)線(xian)圈(quan)Np儲存能量;當(dang)開(kai)關(guan)管(guan)VT1截(jie)止時(shi),次(ci)(ci)級(ji)線(xian)圈(quan)Ns為5負(fu)(fu)6正(zheng),高頻變壓(ya)(ya)器T1中(zhong)存儲的(de)能量通過VD1整(zheng)流(liu)和電(dian)(dian)(dian)容C3濾波后(hou)向負(fu)(fu)載輸出。
電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)工作原理簡述如下: 三極(ji)(ji)管VT1為(wei)(wei)開關電(dian)(dian)(dian)(dian)(dian)(dian)(dian)源管,它和(he)T1、R1、R3、C2等(deng)組成自激式(shi)振蕩電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)。加上輸(shu)入電(dian)(dian)(dian)(dian)(dian)(dian)(dian)源后(hou),電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)經(jing)啟(qi)動電(dian)(dian)(dian)(dian)(dian)(dian)(dian)阻R1流(liu)(liu)向VT1的(de)基極(ji)(ji),使(shi)VT1導通。 VT1導通后(hou),變壓(ya)器(qi)初級線(xian)(xian)(xian)圈Np就加上輸(shu)入直流(liu)(liu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya),其集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)Ic在Np中(zhong)線(xian)(xian)(xian)性(xing)增長(chang),反(fan)(fan)饋(kui)線(xian)(xian)(xian)圈Nb產生3正(zheng)4負的(de)感(gan)應電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya),使(shi)VT1得到基極(ji)(ji)為(wei)(wei)正(zheng),發(fa)射極(ji)(ji)為(wei)(wei)負的(de)正(zheng)反(fan)(fan)饋(kui)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya),此電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)經(jing)C2、R3向VT1注(zhu)入基極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)使(shi)VT1的(de)集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)進一步增大(da),正(zheng)反(fan)(fan)饋(kui)產生雪(xue)崩過程,使(shi)VT1飽和(he)導通。在VT1飽和(he)導通期間(jian),T1通過初級線(xian)(xian)(xian)圈Np儲(chu)存磁能。 與此同時(shi),感(gan)應電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)給C2充電(dian)(dian)(dian)(dian)(dian)(dian)(dian),隨著C2充電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)的(de)增高,VT1基極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)位逐漸變低,當VT1的(de)基極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)變化不(bu)能滿足其繼(ji)續飽和(he)時(shi),VT1 退出飽和(he)區(qu)進入放大(da)區(qu)。 VT1進入放大(da)狀(zhuang)態(tai)(tai)后(hou),其集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)由放大(da)狀(zhuang)態(tai)(tai)前的(de)最大(da)值下降,在反(fan)(fan)饋(kui)線(xian)(xian)(xian)圈Nb產生3負4正(zheng)的(de)感(gan)應電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya),使(shi)VT1基極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)減(jian)小(xiao),其集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)極(ji)(ji)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)隨之減(jian)小(xiao),正(zheng)反(fan)(fan)饋(kui)再一次(ci)出現雪(xue)崩過程,VT1迅速(su)截止。
VT1截止后,變(bian)壓(ya)(ya)器T1儲(chu)存的(de)(de)(de)能量提供(gong)給負載,次(ci)級(ji)線圈Ns產(chan)生的(de)(de)(de)5負6正(zheng)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)經二極管(guan)VD1整流濾波后,在C3上(shang)得到(dao)直(zhi)流電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)給手機電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)。 在VT1截止時(shi),直(zhi)流供(gong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)輸人電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)和Nb感應(ying)的(de)(de)(de)3負4正(zheng)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)又(you)經R1、R3給C2反向充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian),逐(zhu)漸提高VT1基(ji)極電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)位,使其(qi)重新導通,再次(ci)翻轉(zhuan)達(da)(da)到(dao)飽和狀態,電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路就(jiu)這樣重復振(zhen)蕩下去(qu)。 R5、R6、VD2、VT2等(deng)組(zu)成限壓(ya)(ya)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路,以保護電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)不被過(guo)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian),這里以3.6V手機電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)為例,其(qi)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)限制(zhi)(zhi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)為4.2V。在電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)過(guo)程中(zhong),電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)逐(zhu)漸上(shang)升(sheng),當充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)大(da)于4.2V時(shi),經R5、R6分壓(ya)(ya)后穩壓(ya)(ya)二極管(guan)VD2開始導通,使VT2導通,VT2的(de)(de)(de)分流作用減(jian)小了(le)(le)VT1的(de)(de)(de)基(ji)極電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流,從而減(jian)小了(le)(le)VT1的(de)(de)(de)集電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)極電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流Ic,達(da)(da)到(dao)了(le)(le)限制(zhi)(zhi)輸出電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)的(de)(de)(de)作用。這時(shi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路停止了(le)(le)對電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)大(da)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian),用小電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流將電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)維(wei)持在4.2V。
元器件(jian)選(xuan)擇(ze)和安裝調(diao)試 VT1要(yao)求Icm>0.5A,hEF為50-100,可用(yong)(yong)2SC2500、2SC1008等(deng),VD1為穩(wen)壓值為3V的穩(wen)壓二極管。 高頻變壓器T1要(yao)自制,用(yong)(yong)E16的鐵(tie)氧(yang)體磁芯,Np用(yong)(yong)φ0.21漆包(bao)線(xian)繞26匝(za),Nb用(yong)(yong)φ0.21漆包(bao)線(xian)繞8匝(za),Ns用(yong)(yong)φ0.41漆包(bao)線(xian)繞15匝(za)。繞制時(shi)要(yao)注意各線(xian)圈的起始(shi)端不要(yao)搞錯,以免電(dian)路不起振或輸出(chu)電(dian)壓不正(zheng)常。
組裝時(shi)在(zai)兩塊(kuai)磁(ci)芯間墊(dian)一層厚度約為(wei)(wei)0.03mm的(de)(de)(de)(de)塑料薄膜(mo)作磁(ci)芯氣隙。 太(tai)(tai)陽(yang)能電(dian)(dian)池(chi)(chi)(chi)板(ban)使(shi)用4塊(kuai)面積為(wei)(wei)6cm×6cm的(de)(de)(de)(de)硅太(tai)(tai)陽(yang)能電(dian)(dian)池(chi)(chi)(chi)板(ban),其(qi)空載輸(shu)出(chu)電(dian)(dian)壓(ya)(ya)為(wei)(wei)4V,當工(gong)作電(dian)(dian)流(liu)為(wei)(wei)40mA時(shi)輸(shu)出(chu)電(dian)(dian)壓(ya)(ya)為(wei)(wei)3V。由(you)于(yu)直(zhi)流(liu)變換器的(de)(de)(de)(de)工(gong)作效率隨著輸(shu)入(ru)電(dian)(dian)壓(ya)(ya)的(de)(de)(de)(de)的(de)(de)(de)(de)增高(gao)(gao)(gao)而增高(gao)(gao)(gao),因(yin)此(ci)4塊(kuai)太(tai)(tai)陽(yang)能電(dian)(dian)池(chi)(chi)(chi)板(ban)串聯后使(shi)用,這(zhe)時(shi)電(dian)(dian)路的(de)(de)(de)(de)輸(shu)入(ru)電(dian)(dian)壓(ya)(ya)為(wei)(wei)12V。讀者可根據(ju)你(ni)能購到的(de)(de)(de)(de)太(tai)(tai)陽(yang)能電(dian)(dian)池(chi)(chi)(chi)板(ban)規(gui)格決定使(shi)用的(de)(de)(de)(de)數(shu)量和聯接方法(fa)。 其(qi)它元(yuan)件的(de)(de)(de)(de)參數(shu)見圖(tu)1。 印(yin)刷(shua)電(dian)(dian)路板(ban)見圖(tu)2,尺寸(cun)為(wei)(wei)45×26mm2。 安裝完成后,接上(shang)太(tai)(tai)陽(yang)能電(dian)(dian)池(chi)(chi)(chi)板(ban),并將其(qi)放在(zai)陽(yang)光下(xia),空載時(shi)電(dian)(dian)路輸(shu)出(chu)電(dian)(dian)壓(ya)(ya)約為(wei)(wei)4.2V,當空載輸(shu)出(chu)電(dian)(dian)壓(ya)(ya)高(gao)(gao)(gao)于(yu)4.2V時(shi)可適當減小(xiao)R5的(de)(de)(de)(de)阻(zu)值,反(fan)之增加R5的(de)(de)(de)(de)阻(zu)值。電(dian)(dian)路工(gong)作電(dian)(dian)流(liu)跟太(tai)(tai)陽(yang)光的(de)(de)(de)(de)強弱有關,正常時(shi)約為(wei)(wei)40mA,這(zhe)時(shi)充電(dian)(dian)電(dian)(dian)流(liu)約為(wei)(wei)85mA。