鋰離子可充電電池是20世紀開發成功的新型高能電池，相對于傳統的鎳鎘電池和鎳氫電池而言，具有容量大、工作電壓高、工作溫度范圍寬、循環壽命長、自放電率低、無記憶效應、無污染等優點，自問世以來已廣泛應用于軍事和民用小型電器中，如移動電話、便攜式計算機、攝像機、照相機等，部分代替了傳統電池。單節鋰離子電池的電壓約為3．6V，容量也不可能無限大，因此，常將單節鋰離子電池進行串、并聯處理，以滿足不同(tong)場合的(de)要求(qiu)。為了(le)確保(bao)(bao)(bao)(bao)鋰離(li)子(zi)電(dian)(dian)(dian)池(chi)安(an)全可靠的(de)使用(yong)，本文介紹(shao)了(le)一種(zhong)嚴格(ge)、周密的(de)充(chong)(chong)(chong)(chong)、放(fang)(fang)電(dian)(dian)(dian)保(bao)(bao)(bao)(bao)護(hu)(hu)系統的(de)設計方(fang)案。該方(fang)案采用(yong)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)、放(fang)(fang)電(dian)(dian)(dian)分離(li)的(de)控制方(fang)式(shi)，具有兩(liang)(liang)級單節過(guo)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)保(bao)(bao)(bao)(bao)護(hu)(hu)、單節過(guo)放(fang)(fang)電(dian)(dian)(dian)保(bao)(bao)(bao)(bao)護(hu)(hu)、兩(liang)(liang)級放(fang)(fang)電(dian)(dian)(dian)過(guo)電(dian)(dian)(dian)流保(bao)(bao)(bao)(bao)護(hu)(hu)、放(fang)(fang)電(dian)(dian)(dian)短路保(bao)(bao)(bao)(bao)護(hu)(hu)、放(fang)(fang)電(dian)(dian)(dian)溫度保(bao)(bao)(bao)(bao)護(hu)(hu)、充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)溫度保(bao)(bao)(bao)(bao)護(hu)(hu)、充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)防(fang)反接保(bao)(bao)(bao)(bao)護(hu)(hu)、充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)時禁止放(fang)(fang)電(dian)(dian)(dian)等(deng)功(gong)能，可適用(yong)于各(ge)種(zhong)三／四節鋰離(li)子(zi)可充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)電(dian)(dian)(dian)池(chi)串聯使用(yong)的(de)場合。

　　1 系統概述

　　該保(bao)(bao)(bao)護(hu)(hu)系(xi)統采用(yong)精(jing)(jing)(jing)工電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)三／四節串聯鋰(li)離子(zi)可充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)專用(yong)充(chong)(chong)(chong)、放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)保(bao)(bao)(bao)護(hu)(hu)ICS-8254構(gou)建一級保(bao)(bao)(bao)護(hu)(hu)。S-8254系(xi)列(lie)內(nei)置(zhi)高精(jing)(jing)(jing)度電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)檢(jian)(jian)測(ce)(ce)(ce)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)和(he)延(yan)遲電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)，針對各節電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)進行高精(jing)(jing)(jing)度電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)檢(jian)(jian)測(ce)(ce)(ce)，實現單(dan)節過(guo)充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)保(bao)(bao)(bao)護(hu)(hu)和(he)單(dan)節過(guo)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)保(bao)(bao)(bao)護(hu)(hu)，并(bing)具備(bei)三段(duan)過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)檢(jian)(jian)測(ce)(ce)(ce)功能，通過(guo)外(wai)接(jie)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容可設置(zhi)過(guo)充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)檢(jian)(jian)測(ce)(ce)(ce)延(yan)遲時(shi)間、過(guo)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)檢(jian)(jian)測(ce)(ce)(ce)延(yan)遲時(shi)間和(he)過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)檢(jian)(jian)測(ce)(ce)(ce)延(yan)遲時(shi)間1(過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)檢(jian)(jian)測(ce)(ce)(ce)延(yan)遲時(shi)間2和(he)過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)檢(jian)(jian)測(ce)(ce)(ce)延(yan)遲時(shi)間3在芯片內(nei)部被固定)。該系(xi)統采用(yong)精(jing)(jing)(jing)工電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)S-8244系(xi)列(lie)內(nei)置(zhi)高精(jing)(jing)(jing)度電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)檢(jian)(jian)測(ce)(ce)(ce)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)和(he)延(yan)遲電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)的(de)鋰(li)離子(zi)可充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)二級保(bao)(bao)(bao)護(hu)(hu)專用(yong)IC實現電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)的(de)單(dan)節二級充(chong)(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)保(bao)(bao)(bao)護(hu)(hu)，其保(bao)(bao)(bao)護(hu)(hu)延(yan)遲時(shi)間可通過(guo)外(wai)接(jie)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)容的(de)容值來設置(zhi)。

　　S-8254通(tong)過SEL端(duan)子(zi)可以(yi)實現電(dian)(dian)(dian)池(chi)三節串(chuan)(chuan)聯(lian)用或四節串(chuan)(chuan)聯(lian)用的切(qie)換；S-8244則(ze)通(tong)過電(dian)(dian)(dian)阻R22短路(lu)第四節電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓檢(jian)測端(duan)子(zi)VCC3和(he)VSS即可用作三節電(dian)(dian)(dian)池(chi)串(chuan)(chuan)聯(lian)使(shi)用時的二級保護。

　　2 各保護功能的實現

S-8254系列充、放電保護電壓和過電流檢測電壓以50mV為進階單位，S-8244系列過充電檢測電壓以5mV為進階單位，系統根據不同場合的使用需求，可以選擇相應適合的型號。現以圖1保護系統為例，采用S-8254AAVFT和S-8244AAPFN作為保護IC，具體說明各保護功能的實現過程。
 

　　圖1為(wei)四節電池串聯使用時的(de)保(bao)護系統原理圖。

　　2．1 過放電保護

　　通(tong)常(chang)(chang)狀(zhuang)(zhuang)態(tai)(tai)(tai)下，S-8254放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)控制用端子(zi)DOP為(wei)VSS(電(dian)(dian)(dian)(dian)(dian)池4的(de)負電(dian)(dian)(dian)(dian)(dian)壓(ya))電(dian)(dian)(dian)(dian)(dian)位，放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)MOS管(guan)QDISl，QDIS2處于(yu)導通(tong)狀(zhuang)(zhuang)態(tai)(tai)(tai)，系(xi)統(tong)可正常(chang)(chang)進(jin)行放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)工(gong)作。當檢(jian)測到某節電(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)壓(ya)低于(yu)2．7V(VDLn)，且這種狀(zhuang)(zhuang)態(tai)(tai)(tai)保持在(zai)TDL(TDL時間由過放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)檢(jian)測延遲端子(zi)CDT外接電(dian)(dian)(dian)(dian)(dian)容CS決定)以上(shang)(shang)時，DOP端子(zi)的(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)變為(wei)VDD(電(dian)(dian)(dian)(dian)(dian)池1的(de)正電(dian)(dian)(dian)(dian)(dian)壓(ya))電(dian)(dian)(dian)(dian)(dian)位，放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)MOS管(guan)關閉，停止放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)，這種狀(zhuang)(zhuang)態(tai)(tai)(tai)稱為(wei)過放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)狀(zhuang)(zhuang)態(tai)(tai)(tai)。進(jin)入過放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)狀(zhuang)(zhuang)態(tai)(tai)(tai)后(hou)，VMP端子(zi)電(dian)(dian)(dian)(dian)(dian)壓(ya)經電(dian)(dian)(dian)(dian)(dian)阻R3由負載(zai)下拉(la)至(zhi)VDD／2以下，S-8254轉為(wei)休眠狀(zhuang)(zhuang)態(tai)(tai)(tai)；斷開負載(zai)后(hou)，VMP端子(zi)電(dian)(dian)(dian)(dian)(dian)壓(ya)經電(dian)(dian)(dian)(dian)(dian)阻R9、充電(dian)(dian)(dian)(dian)(dian)MOS管(guan)QCHRl和QCHR2由VDD上(shang)(shang)拉(la)至(zhi)VDD／2以上(shang)(shang)且低于(yu)VDD，S-8254退(tui)出(chu)休眠狀(zhuang)(zhuang)態(tai)(tai)(tai)。當所有電(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)壓(ya)都在(zai)3．0V(VDUn)以上(shang)(shang)時，過放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)狀(zhuang)(zhuang)態(tai)(tai)(tai)被(bei)解除(chu)，系(xi)統(tong)恢復正常(chang)(chang)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)(dian)工(gong)作。

　　2．2 過電流、短路保(bao)護

　　該系統采(cai)用2個并聯的(de)20mΩ功(gong)率電(dian)(dian)(dian)(dian)(dian)阻RS1，RS2用于(yu)(yu)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)檢(jian)測(ce)(ce)。當放(fang)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)大(da)于(yu)(yu)20A時(shi)(shi)(shi)，過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)1，2檢(jian)測(ce)(ce)端子(zi)VINI和(he)VSS之間(jian)(jian)的(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)差大(da)于(yu)(yu)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)檢(jian)測(ce)(ce)電(dian)(dian)(dian)(dian)(dian)位1VI0V1(O．2V)，且這(zhe)種狀(zhuang)(zhuang)(zhuang)態(tai)(tai)(tai)保(bao)(bao)持(chi)在(zai)TIOVl(TIOVl時(shi)(shi)(shi)間(jian)(jian)由(you)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)1檢(jian)測(ce)(ce)延遲(chi)端子(zi)CDT外接電(dian)(dian)(dian)(dian)(dian)容C3決定)以(yi)(yi)(yi)上(shang)時(shi)(shi)(shi)，DOP端子(zi)的(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)變為(wei)VDD電(dian)(dian)(dian)(dian)(dian)位，放(fang)電(dian)(dian)(dian)(dian)(dian)MOS管關閉，停止放(fang)電(dian)(dian)(dian)(dian)(dian)，進入(ru)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)1保(bao)(bao)護(hu)狀(zhuang)(zhuang)(zhuang)態(tai)(tai)(tai)。在(zai)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)狀(zhuang)(zhuang)(zhuang)態(tai)(tai)(tai)下，VMP端子(zi)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)經(jing)電(dian)(dian)(dian)(dian)(dian)阻R3由(you)負(fu)載下拉至(zhi)(zhi)VSS；斷開負(fu)載后(hou)，VMP端子(zi)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)經(jing)IC內(nei)部RVMD電(dian)(dian)(dian)(dian)(dian)阻被上(shang)拉至(zhi)(zhi)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)檢(jian)測(ce)(ce)電(dian)(dian)(dian)(dian)(dian)位3VIOV3(電(dian)(dian)(dian)(dian)(dian)池1的(de)正電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)VC1～1．2V)以(yi)(yi)(yi)上(shang)，過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)狀(zhuang)(zhuang)(zhuang)態(tai)(tai)(tai)解除，系統恢復(fu)正常(chang)放(fang)電(dian)(dian)(dian)(dian)(dian)。當放(fang)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)大(da)于(yu)(yu)50A時(shi)(shi)(shi)，VINI和(he)VSS之間(jian)(jian)的(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)差大(da)于(yu)(yu)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)檢(jian)測(ce)(ce)電(dian)(dian)(dian)(dian)(dian)位2VIOV2(0．5V)，且這(zhe)種狀(zhuang)(zhuang)(zhuang)態(tai)(tai)(tai)保(bao)(bao)持(chi)在(zai)TIOV2(1ms)以(yi)(yi)(yi)上(shang)時(shi)(shi)(shi)，進入(ru)過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)2保(bao)(bao)護(hu)狀(zhuang)(zhuang)(zhuang)態(tai)(tai)(tai)。當負(fu)載出現短(duan)路(lu)時(shi)(shi)(shi)，過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)3檢(jian)測(ce)(ce)端子(zi)VMP的(de)電(dian)(dian)(dian)(dian)(dian)壓(ya)(ya)(ya)被瞬(shun)間(jian)(jian)拉至(zhi)(zhi)VIOV3以(yi)(yi)(yi)下(檢(jian)測(ce)(ce)延遲(chi)時(shi)(shi)(shi)間(jian)(jian)TI0V3為(wei)300μs)，系統進入(ru)短(duan)路(lu)保(bao)(bao)護(hu)(過(guo)(guo)(guo)(guo)電(dian)(dian)(dian)(dian)(dian)流(liu)(liu)(liu)(liu)(liu)(liu)(liu)(liu)3保(bao)(bao)護(hu))狀(zhuang)(zhuang)(zhuang)態(tai)(tai)(tai)。

　　2．3 過充電(dian)保護

為了確保電池的安全性，該系統對于過充電狀態采取了兩級保護措施。首先，當檢測到某節電池電壓高于4．05V(VCU2n)，且這種狀態保持在TCU2(TCU2時間由S-8244過充電檢測延遲端子ICT外接電容C16決定)以上時，S-8244充電控制用端子CO輸出動態“H”，二級充電MOS管QCHR2關閉，停止充電，這種狀態稱為過充電狀態；進入過充電狀態后，當所有電池電壓都在3．80V(VCL2n)以下時，過充電狀態解除。若因某種原因導致S-8244保護失效，則S-8254過充電保護生效，當檢測到某節電池電壓高于4．25V(VCUln)，且這種狀態保持在TCUl(TCUl時間由S-8254過充電檢測延遲端子CCT外接電容C2決定)以上時，S-8254充電控制用端子COP變為高阻抗，一級充電MOS管QCHRl的G極被外接電阻R2拉高，QCHRl關閉，進入過充電狀態；當所有電池電壓都在4．15V(VCLln)以下時，過充電狀態解除。
2．4 充電溫度保(bao)護

　　為了確保(bao)充電(dian)(dian)(dian)時(shi)的(de)安全(quan)性和(he)(he)延長電(dian)(dian)(dian)池(chi)(chi)的(de)使用(yong)壽命，電(dian)(dian)(dian)池(chi)(chi)的(de)充電(dian)(dian)(dian)溫度(du)(du)應控制在O～45℃之間(jian)為宜。該(gai)系(xi)統采用(yong)一(yi)個(ge)負溫度(du)(du)系(xi)數的(de)NTC溫度(du)(du)傳感器(qi)(qi)(qi)RES和(he)(he)一(yi)個(ge)2路比較器(qi)(qi)(qi)LM393來(lai)實現充電(dian)(dian)(dian)溫度(du)(du)保(bao)護，其原理圖如圖2所示：當(dang)充電(dian)(dian)(dian)溫度(du)(du)位于O～45℃之間(jian)時(shi)，LM393的(de)兩路比較器(qi)(qi)(qi)輸(shu)出均為高阻(zu)態，PNP型三(san)極(ji)(ji)管(guan)Q1關斷，對充電(dian)(dian)(dian)電(dian)(dian)(dian)路不產生影響；隨著溫度(du)(du)的(de)升(sheng)高，RES阻(zu)值逐漸變(bian)小(xiao)，當(dang)溫度(du)(du)大(da)于45℃時(shi)，LM393下面一(yi)路比較器(qi)(qi)(qi)反轉(zhuan)，輸(shu)出低電(dian)(dian)(dian)平(ping)(ping)，通(tong)(tong)(tong)過二極(ji)(ji)管(guan)D6將Q1的(de)B極(ji)(ji)拉低，Q1導通(tong)(tong)(tong)，充電(dian)(dian)(dian)MOS管(guan)QCHRl的(de)G極(ji)(ji)C_QCHR被強制拉高，QCHRl關閉，停止充電(dian)(dian)(dian)；同樣，隨著溫度(du)(du)的(de)降低，RES阻(zu)值逐漸變(bian)大(da)，當(dang)溫度(du)(du)小(xiao)于O℃時(shi)，LM393上面一(yi)路比較器(qi)(qi)(qi)輸(shu)出低電(dian)(dian)(dian)平(ping)(ping)，通(tong)(tong)(tong)過二極(ji)(ji)管(guan)D5將Q1導通(tong)(tong)(tong)，從而關閉QCHRl，停止充電(dian)(dian)(dian)。

　　2．5 其他保護(hu)功(gong)能

　　該(gai)系統通過一些(xie)簡單有(you)效(xiao)的電路設計(ji)，巧妙地實現了(le)所需的某些(xie)保(bao)護功能。

　　2．5．1 放電溫(wen)度保護

　　為了(le)確保(bao)電(dian)池(chi)的使用安全性，需對(dui)電(dian)池(chi)的放(fang)電(dian)溫(wen)度進行限制。該系統在放(fang)電(dian)MOS管(guan)QDISl，QDIS2的G極C_QDIS和(he)VDD之(zhi)間連接了(le)一個常開型可恢復(fu)溫(wen)度保(bao)險絲F1。通(tong)常狀態下F1保(bao)持開路(lu)。不(bu)影(ying)響正常放(fang)電(dian)；當電(dian)池(chi)溫(wen)度高于75℃時，F1閉(bi)(bi)合，C_QDIS與(yu)VDD導(dao)通(tong)．放(fang)電(dian)MOS管(guan)關(guan)閉(bi)(bi)，停止(zhi)放(fang)電(dian)，從而實現放(fang)電(dian)溫(wen)度保(bao)護功能。

　　2．5．2 充電防反接保護

　　若誤將充電器的正、負極(ji)反接入系統(tong)中，則會由充電(dian)器(qi)和(he)電(dian)池共同形成(cheng)一個大電(dian)流回路(lu)，導致元器(qi)件損(sun)壞(huai)，甚至帶來(lai)更大的安全危害。該系統(tong)在充電(dian)回路(lu)中串接進(jin)一個防反接二極(ji)管D1，這樣(yang)即(ji)使充電(dian)器(qi)反接，因此時CHRl的電(dian)位將高于(yu)CHR+，由于(yu)二極(ji)管D1的存(cun)在，系統(tong)將構不成(cheng)回路(lu)，從而對其(qi)起到了保護(hu)作用。

　　2．5．3 充電時禁止放(fang)電

　　系統在連接充電器進行充電的過程中若允許其進行放電工作，可能會帶來不必要的安全隱患，因此該系統在充電器的正極輸入端CHR+和C_QDIS之間接入了一個二極管D4。在未連接充電器時，CHR+懸空，對放電(dian)工作不產生(sheng)影響；當(dang)連接(jie)充電(dian)器(qi)進行充電(dian)時，C_QDIS通(tong)過(guo)D4被(bei)CHR+強制拉高，QDISl，QDIS2關閉，禁止放電(dian)。

　　鋰離子(zi)可(ke)(ke)(ke)充電(dian)(dian)電(dian)(dian)池(chi)以其(qi)(qi)(qi)特有(you)的(de)(de)性能(neng)優(you)勢已經在多個(ge)領(ling)域(yu)中得到了普遍應用，可(ke)(ke)(ke)以預(yu)計其(qi)(qi)(qi)必將(jiang)成為21世紀的(de)(de)主要動力(li)電(dian)(dian)源之一。隨著鋰離子(zi)可(ke)(ke)(ke)充電(dian)(dian)電(dian)(dian)池(chi)工業(ye)的(de)(de)發展，保護系統(tong)作(zuo)為其(qi)(qi)(qi)不可(ke)(ke)(ke)分割(ge)的(de)(de)一部分必將(jiang)起到越來越重要的(de)(de)作(zuo)用。