聚合物鋰離子電池使用注意事項
一、電芯(xin)操作注，他說：想發財就(jiu)去萬通商(shang)聯找(zhao)優(you)質(zhi)表帶供貨商(shang)！注意事(shi)項(xiang)
由(you)于(yu)電(dian)芯(xin)屬于(yu)軟(ruan)包裝，為保證電(dian)芯(xin)的性能(neng)不受(shou)損害，必須小心(xin)對電(dian)芯(xin)進(jin)行(xing)操作。
1.鋁箔包(bao)裝(zhuang)材(cai)料
鋁(lv)箔包裝材料易(yi)被尖(jian)銳部(bu)件刺(ci)損，諸如鎳片、尖(jian)針(zhen)。
禁止用尖(jian)銳部件(jian)碰撞電池
應清潔工作環(huan)境(jing)，避(bi)免有尖銳部件存在
禁止用釘子及其(qi)它利(li)器刺穿電(dian)池(chi)
禁止(zhi)將電池與金屬物，如(ru)項鏈、發夾等(deng)一起(qi)運輸或貯存
2.頂封(feng)邊
頂封邊非(fei)常容易受到(dao)損害
禁止彎折頂封邊
3.折(zhe)邊
折(zhe)邊(bian)在電池(chi)生產(chan)過(guo)程中已(yi)完成，并通過(guo)了密封測試。
禁止打開或破壞(huai)折(zhe)邊(bian) 4.極耳
極(ji)耳的機械強度并非異常堅(jian)固，特別是鋁片。
禁止彎折極耳
5.機械(xie)撞擊
禁(jin)止墜落、沖(chong)擊、彎折電芯
禁止用錘子(zi)敲(qiao)擊或踩踏(ta)電池
禁止敲擊或拋擲電池(chi)。
6.短路
任何時候禁止(zhi)短(duan)路電(dian)(dian)芯，它會導致電(dian)(dian)芯嚴重損壞
禁(jin)止用金(jin)屬物如(ru)電線短(duan)路連接(jie)電池(chi)正負極(ji)
二、聚合物鋰(li)離子電池測試標(biao)準環境
環境溫度： 20±5℃
相對(dui)濕(shi)度(du)： 45~85%
在測(ce)試(shi)前電池都要先放完電
三、聚(ju)合物(wu)鋰離子(zi)電范充(chong)放電注意(yi)事項
1.充電
充(chong)(chong)電(dian)(dian)電(dian)(dian)流及(ji)充(chong)(chong)電(dian)(dian)電(dian)(dian)壓(ya)不得(de)超過(guo)以(yi)下標準，如超過(guo)規(gui)定(ding)值可能會(hui)對電(dian)(dian)芯的充(chong)(chong)放(fang)電(dian)(dian)性(xing)(xing)(xing)能、機械性(xing)(xing)(xing)能及(ji)安全性(xing)(xing)(xing)造(zao)成造(zao)成損壞(huai)，進(jin)可能導致發(fa)熱(re)及(ji)泄漏。
電池充電器必須能恒流恒壓充電；
充電時的單(dan)體電池充電電流必須在1C5A以下；
充電時溫度范圍在0~+45℃；
充電時電壓不能超過4.23V。
2.放電
放(fang)電電流不得超(chao)過以下標準，放(fang)電必須在本(ben)標準范圍(wei)內進行。
單體(ti)電(dian)池放(fang)電(dian)電(dian)流(liu)必須小于2C5A；
放電時溫度范(fan)圍在-20~+60℃；
單體電池放電終止電壓不小于(yu)2.75V。
3.過放(fang)電
需要注意的是(shi)，在電芯長(chang)期未使(shi)(shi)用期間，它可能會用其(qi)自放(fang)電特性而處于(yu)某種過放(fang)電狀(zhuang)態。為防(fang)止(zhi)過放(fang)電的發(fa)生(sheng)不能過放(fang)電使(shi)(shi)單體電池低于(yu)2.5V。
4.具(ju)體應用時要求加合格保(bao)護電路板。
四、聚(ju)合(he)物鋰離子電池貯(zhu)存(cun)
電池長期貯存(cun)的環(huan)境為：溫度(du)-20~+35℃
相對濕度 45~75%
電(dian)(dian)池貯存期近一年(nian)時要用標(biao)準充(chong)電(dian)(dian)方式給電(dian)(dian)池充(chong)電(dian)(dian)10%~50%。
五、聚(ju)合物鋰(li)離(li)子電(dian)池運輸
電(dian)池應在10%~50%的充電(dian)狀態下(xia)運(yun)輸。
六、聚合(he)物鋰離子(zi)電池其(qi)它使用說明
1.為了防止(zhi)電池可能發(fa)生泄(xie)漏、發(fa)熱、爆炸，請(qing)注意以下預防措施：
禁(jin)止在任何情(qing)況下拆卸電芯(xin)。
禁止將電池浸入(ru)水中(zhong)或海水中(zhong)，不(bu)能(neng)受潮。
禁止在熱源旁(pang)，如火、加熱器等，使用(yong)或放置電池。
禁止將電池加(jia)熱或丟入火中。
禁止直接焊接電(dian)池。
禁止在(zai)火邊或很熱的環境中充電。
&n，他說(shuo)：想發財(cai)就去萬通(tong)商聯找優質(zhi)表帶供(gong)貨商！nbsp; 禁止將電池放入(ru)微波爐或高壓(ya)容(rong)器內。
禁止在高溫下（如強陽光或(huo)很熱的(de)汽車(che)中）使(shi)用或(huo)放(fang)置電池，否(fou)則(ze)會引起(qi)過(guo)熱、起(qi)火或(huo)者功能衰(shuai)退、壽(shou)命減小。
2.聚合物(wu)鋰離子電(dian)池理(li)論上不存在流動的電(dian)解液，但(dan)萬一有電(dian)解液泄漏而(er)接觸到皮(pi)膚、眼睛(jing)或身體其它部位，應立即用清(qing)水沖冼(xian)電(dian)解液并就醫。
3.禁止使用已損(sun)壞的(de)電芯(xin)（電芯(xin)塑料封邊損(sun)壞，外殼破(po)損(sun)，聞到電解液(ye)氣體，電解液(ye)泄漏等）。
如有電(dian)解液泄漏或(huo)散發電(dian)解液氣味的電(dian)池(chi)應遠離火(huo)源以避免著火(huo)或(huo)爆炸。
鋰電(dian)池保護(hu)電(dian)路綜述
鋰離子電池保(bao)(bao)護(hu)(hu)電(dian)路包括過度充電(dian)保(bao)(bao)護(hu)(hu)、過電(dian)流(liu)／短路保(bao)(bao)護(hu)(hu)和過放電(dian)保(bao)(bao)護(hu)(hu)，要求過充電(dian)保(bao)(bao)護(hu)(hu)高(gao)精密度、保(bao)(bao)護(hu)(hu)IC功(gong)(gong)耗低、高(gao)耐(nai)壓(ya)以及零伏可充電(dian)等特(te)性。本文(wen)詳(xiang)細介紹(shao)了(le)這(zhe)三(san)種保(bao)(bao)護(hu)(hu)電(dian)路的原理、新功(gong)(gong)能(neng)和特(te)性要求。
近(jin)年來，PDA、數字相機、手機、可(ke)攜式音訊設(she)備和(he)藍芽設(she)備等越來越多的產品采用鋰(li)(li)電(dian)(dian)池(chi)(chi)(chi)作為主要電(dian)(dian)源。鋰(li)(li)電(dian)(dian)池(chi)(chi)(chi)具有(you)體積(ji)小、能量密度高、無記(ji)憶效應、循環壽命高、高電(dian)(dian)壓電(dian)(dian)池(chi)(chi)(chi)和(he)自放(fang)(fang)電(dian)(dian)率低(di)等優點，與鎳(nie)鎘、鎳(nie)氫(qing)電(dian)(dian)池(chi)(chi)(chi)不太一樣，鋰(li)(li)電(dian)(dian)池(chi)(chi)(chi)必(bi)須考慮充電(dian)(dian)、放(fang)(fang)電(dian)(dian)時的安全性，以防止特性劣(lie)化。針對鋰(li)(li)電(dian)(dian)池(chi)(chi)(chi)的過充、過度放(fang)(fang)電(dian)(dian)、過電(dian)(dian)流(liu)及(ji)短路保(bao)(bao)(bao)護(hu)(hu)很重要，所(suo)以通常都會在電(dian)(dian)池(chi)(chi)(chi)包內設(she)計保(bao)(bao)(bao)護(hu)(hu)線路用以保(bao)(bao)(bao)護(hu)(hu)鋰(li)(li)電(dian)(dian)池(chi)(chi)(chi)。
由于鋰離(li)子電(dian)(dian)池能量(liang)密度高，因(yin)此難以(yi)確保電(dian)(dian)池的(de)安全性(xing)(xing)。在過(guo)度充電(dian)(dian)狀(zhuang)態下(xia)，電(dian)(dian)池溫度上(shang)升(sheng)后能量(liang)將過(guo)剩，于是電(dian)(dian)解液分解而(er)(er)產(chan)生氣體，因(yin)內壓上(shang)升(sheng)而(er)(er)產(chan)生自燃(ran)或破(po)裂的(de)危險(xian)；反之，在過(guo)度放電(dian)(dian)狀(zhuang)態下(xia)，電(dian)(dian)解液因(yin)分解導致電(dian)(dian)池特性(xing)(xing)及耐久(jiu)性(xing)(xing)劣化(hua)，因(yin)而(er)(er)降低可充電(dian)(dian)次數。
鋰(li)離子(zi)電(dian)池的保護(hu)電(dian)路(lu)(lu)就是要確保這樣的過(guo)(guo)度充電(dian)及(ji)(ji)放(fang)(fang)電(dian)狀(zhuang)態(tai)時(shi)的安全性，并防止特性劣化。鋰(li)離子(zi)電(dian)池的保護(hu)電(dian)路(lu)(lu)是由(you)保護(hu)IC及(ji)(ji)兩顆功(gong)率(lv)MOSFET所構成(cheng)，其中保護(hu)IC監視電(dian)池電(dian)壓，當有過(guo)(guo)度充電(dian)及(ji)(ji)放(fang)(fang)電(dian)狀(zhuang)態(tai)時(shi)切換(huan)到以外掛的功(gong)率(lv)MOSFET來保護(hu)電(dian)池，保護(hu)IC的功(gong)能有過(guo)(guo)度充電(dian)保護(hu)、過(guo)(guo)度放(fang)(fang)電(dian)保護(hu)和(he)過(guo)(guo)電(dian)流／短路(lu)(lu)保護(hu)。
一、過(guo)度充電(dian)保護
過度(du)充(chong)電(dian)(dian)(dian)保護(hu)(hu)(hu)IC的(de)原理(li)為(wei)：當外部(bu)充(chong)電(dian)(dian)(dian)器對鋰(li)電(dian)(dian)(dian)池(chi)充(chong)電(dian)(dian)(dian)時(shi)，為(wei)防止(zhi)因溫度(du)上升(sheng)所導致的(de)內壓上升(sheng)，需(xu)終(zhong)止(zhi)充(chong)電(dian)(dian)(dian)狀態。此時(shi)，保護(hu)(hu)(hu)IC需(xu)檢(jian)測電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓，當到達4.25V時(shi)（假設電(dian)(dian)(dian)池(chi)過充(chong)點為(wei)4.25V）即激(ji)活過度(du)充(chong)電(dian)(dian)(dian)保護(hu)(hu)(hu)，將功率MOSFET由開轉為(wei)切(qie)斷，進而截止(zhi)充(chong)電(dian)(dian)(dian)。
另外，還必須(xu)注(zhu)意因噪音所產(chan)生的過度充(chong)電檢出誤動作，以免判定為過充(chong)保(bao)護。因此，需(xu)要設(she)定延遲(chi)時(shi)間，并且延遲(chi)時(shi)間不(bu)能(neng)短(duan)于(yu)噪音的持續時(shi)間。
二、過度放電保護
在過度放(fang)電(dian)(dian)的情況下(xia)，電(dian)(dian)解液因分(fen)解而(er)導致電(dian)(dian)池特性(xing)劣化，并造成(cheng)充電(dian)(dian)次(ci)數的降低。采用鋰電(dian)(dian)池保護(hu)(hu)IC可以避免過度放(fang)電(dian)(dian)現象(xiang)產生，實現電(dian)(dian)池保護(hu)(hu)功能。
過(guo)度(du)(du)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)保(bao)護IC原(yuan)理：為了防止鋰(li)電(dian)(dian)(dian)(dian)池(chi)的過(guo)度(du)(du)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)狀態(tai)，假(jia)設鋰(li)電(dian)(dian)(dian)(dian)池(chi)接(jie)上(shang)負載，當(dang)鋰(li)電(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)壓低于(yu)其過(guo)度(du)(du)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)壓檢測點(dian)（假(jia)定為2.3V）時將(jiang)(jiang)激活過(guo)度(du)(du)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)保(bao)護，使功率MOSFET由開轉變為切斷而截止放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)，以避免電(dian)(dian)(dian)(dian)池(chi)過(guo)度(du)(du)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)現(xian)象產生(sheng)，并將(jiang)(jiang)電(dian)(dian)(dian)(dian)池(chi)保(bao)持在(zai)低靜(jing)態(tai)電(dian)(dian)(dian)(dian)流(liu)的待機模式，此時的電(dian)(dian)(dian)(dian)流(liu)僅0.1μA。
當鋰電(dian)(dian)(dian)(dian)池(chi)接上充電(dian)(dian)(dian)(dian)器，且此(ci)時鋰電(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)壓高(gao)于過度放電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)壓時，過度放電(dian)(dian)(dian)(dian)保護功(gong)能(neng)方可解除(chu)。另外(wai)，考慮到脈沖放電(dian)(dian)(dian)(dian)的情況，過放電(dian)(dian)(dian)(dian)檢測電(dian)(dian)(dian)(dian)路設有(you)延遲(chi)時間以(yi)避(bi)免產生誤動作。
三、過電流及短(duan)路電流
因為不明原因（放(fang)電(dian)時或正負極(ji)遭金(jin)屬物(wu)誤觸）造成過電(dian)流或短路，為確(que)保安全，必須(xu)使其立即停止放(fang)電(dian)。
過(guo)電(dian)(dian)流保(bao)(bao)(bao)護IC原理為(wei)，當放(fang)電(dian)(dian)電(dian)(dian)流過(guo)大或短路情況產生(sheng)時，保(bao)(bao)(bao)護IC將激活過(guo)（短路）電(dian)(dian)流保(bao)(bao)(bao)護，此時過(guo)電(dian)(dian)流的檢(jian)測是將功率MOSFET的Rds(on) 當成感應阻抗用以監測其電(dian)(dian)壓的下(xia)降情形(xing)，如(ru)果比所定的過(guo)電(dian)(dian)流檢(jian)測電(dian)(dian)壓還(huan)高則停止放(fang)電(dian)(dian)，運算公式為(wei):
V- = I × Rds(on) × 2（V- 為過電流(liu)(liu)檢測電壓，I 為放(fang)電電流(liu)(liu)）
假(jia)設 V- = 0.2V，Rds(on) = 25mΩ，則保護電流的大(da)小為 I = 4A
同樣地，過電流檢測也必須設有(you)延(yan)遲時間以防有(you)突發電流流入時產生誤動作。
通常(chang)在過電(dian)(dian)流(liu)產(chan)生后，若(ruo)能去除過電(dian)(dian)流(liu)因素（例(li)如馬上與(yu)負(fu)載(zai)脫離），將會恢復其正常(chang)狀態，可以再進行(xing)正常(chang)的充放電(dian)(dian)動作。
四、鋰電池(chi)保(bao)護(hu)IC的(de)新(xin)功能
除(chu)了上述的鋰電池保(bao)護IC功能之外(wai)，下面這些新的功能同樣值得(de)關注：
1.充電(dian)時的過電(dian)流保護
當連(lian)接充電(dian)器(qi)進(jin)(jin)行充電(dian)時突然產生過電(dian)流（如充電(dian)器(qi)損(sun)壞），電(dian)路(lu)立即進(jin)(jin)行過電(dian)流檢測，此時Cout將(jiang)由(you)高轉為(wei)(wei)低(di)，功(gong)率MOSFET由(you)開(kai)轉為(wei)(wei)切斷，實現保護功(gong)能。
V- = I × Rds(on) × 2
（I 是充電(dian)電(dian)流；Vdet4，過(guo)電(dian)流檢測電(dian)壓，Vdet4 為 -0.1V）
2.過度充電時的(de)鎖定模式
通(tong)常(chang)保護(hu)IC在(zai)過度(du)充(chong)(chong)電(dian)(dian)(dian)保護(hu)時將經過一段延遲時間(jian)，然(ran)后就會(hui)將功率(lv)(lv)MOSFET切斷以(yi)達到保護(hu)的(de)目(mu)的(de)，當鋰(li)電(dian)(dian)(dian)池電(dian)(dian)(dian)壓一直(zhi)下降(jiang)到解除(chu)點（過度(du)充(chong)(chong)電(dian)(dian)(dian)滯(zhi)后電(dian)(dian)(dian)壓）時就會(hui)恢(hui)復(fu)(fu)，此時又會(hui)繼續充(chong)(chong)電(dian)(dian)(dian)→保護(hu)→放電(dian)(dian)(dian)→充(chong)(chong)電(dian)(dian)(dian)→放電(dian)(dian)(dian)。這(zhe)種狀態(tai)的(de)安(an)全性(xing)問題(ti)將無法獲得有(you)效解決，鋰(li)電(dian)(dian)(dian)池將一直(zhi)重復(fu)(fu)著(zhu)充(chong)(chong)電(dian)(dian)(dian)→放電(dian)(dian)(dian)→充(chong)(chong)電(dian)(dian)(dian)→放電(dian)(dian)(dian)的(de)動作(zuo)，功率(lv)(lv)MOSFET的(de)柵極將反復(fu)(fu)地(di)處于(yu)高(gao)低電(dian)(dian)(dian)壓交替(ti)狀態(tai)，這(zhe)樣可能(neng)會(hui)使MOSFET變熱(re)(re)，還(huan)會(hui)降(jiang)低電(dian)(dian)(dian)池壽命，因此鎖定模式很重要。假如鋰(li)電(dian)(dian)(dian)保護(hu)電(dian)(dian)(dian)路在(zai)檢測到過度(du)充(chong)(chong)電(dian)(dian)(dian)保護(hu)時有(you)鎖定模式，MOSFET將不會(hui)變熱(re)(re)，且(qie)安(an)全性(xing)相對提高(gao)很多。
在(zai)過度充(chong)電(dian)(dian)(dian)保護之后，只要(yao)充(chong)電(dian)(dian)(dian)器連接在(zai)電(dian)(dian)(dian)池(chi)(chi)包上，此時將進(jin)入過充(chong)鎖(suo)定模式。此時，即使鋰(li)電(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)壓下降也不會產生再充(chong)電(dian)(dian)(dian)的(de)情(qing)形，將充(chong)電(dian)(dian)(dian)器移(yi)除并(bing)連接負載即可恢復(fu)充(chong)放電(dian)(dian)(dian)的(de)狀態(tai)。
3.減少保護電路組(zu)件尺(chi)寸
將過(guo)度充電(dian)(dian)和短路(lu)保護用的延遲電(dian)(dian)容器整合在(zai)到保護IC里面，以(yi)減少保護電(dian)(dian)路(lu)組件尺寸。
五、對保護IC性(xing)，他說：想發財就去(qu)萬通(tong)商(shang)聯(lian)找(zhao)優質鉸鏈供(gong)貨商(shang)！性(xing)能的要(yao)求(qiu)
1.過(guo)度充電(dian)保(bao)護(hu)的高(gao)精密度化
當鋰離子電(dian)(dian)(dian)池(chi)(chi)有(you)過度(du)(du)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)狀態時(shi)，為防止因溫度(du)(du)上(shang)升(sheng)所導致的內壓上(shang)升(sheng)，須截(jie)止充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)狀態。保護IC將檢(jian)(jian)測(ce)電(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)壓，當檢(jian)(jian)測(ce)到過度(du)(du)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)時(shi)，則過度(du)(du)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)檢(jian)(jian)測(ce)的功率MOSFET使(shi)之切斷(duan)而截(jie)止充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)。此(ci)時(shi)應注意的是(shi)過度(du)(du)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)的檢(jian)(jian)測(ce)電(dian)(dian)(dian)壓的高精(jing)密(mi)度(du)(du)化，在(zai)電(dian)(dian)(dian)池(chi)(chi)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)時(shi)，使(shi)電(dian)(dian)(dian)池(chi)(chi)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)到飽滿的狀態是(shi)使(shi)用(yong)者很關心的問題(ti)，同(tong)時(shi)兼顧到安全性(xing)問題(ti)，因此(ci)需要在(zai)達(da)到容許(xu)電(dian)(dian)(dian)壓時(shi)截(jie)止充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)狀態。要同(tong)時(shi)符合(he)這兩個條件，必須有(you)高精(jing)密(mi)度(du)(du)的檢(jian)(jian)測(ce)器(qi)，目前檢(jian)(jian)測(ce)器(qi)的精(jing)密(mi)度(du)(du)為25mV，該精(jing)密(mi)度(du)(du)將有(you)待于(yu)進一步提高。
2.降低保護IC的耗電
隨著使用(yong)時間的(de)增加(jia)，已充(chong)過電(dian)(dian)(dian)(dian)的(de)鋰離子電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓(ya)會逐漸降(jiang)低，最后低到(dao)規格標(biao)準值以(yi)(yi)下(xia)，此時就(jiu)需(xu)要再度(du)充(chong)電(dian)(dian)(dian)(dian)。若未充(chong)電(dian)(dian)(dian)(dian)而繼續使用(yong)，可能造成由于過度(du)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)而使電(dian)(dian)(dian)(dian)池不能繼續使用(yong)。為防止過度(du)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)，保(bao)護IC必須(xu)檢(jian)測電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓(ya)，一旦(dan)達到(dao)過度(du)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)檢(jian)測電(dian)(dian)(dian)(dian)壓(ya)以(yi)(yi)下(xia)，就(jiu)得使放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)一方的(de)功率MOSFET切斷而截止放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)。但(dan)此時電(dian)(dian)(dian)(dian)池本身仍有(you)自然(ran)放(fang)(fang)(fang)電(dian)(dian)(dian)(dian)及保(bao)護IC的(de)消(xiao)耗電(dian)(dian)(dian)(dian)流(liu)存(cun)在，因此需(xu)要使保(bao)護IC消(xiao)耗的(de)電(dian)(dian)(dian)(dian)流(liu)降(jiang)到(dao)最低程度(du)。
3.過電流／短路保護(hu)需有低檢測電壓及高精密度的要求
因不(bu)明原(yuan)因導致短路時必須立即停(ting)止放(fang)電(dian)(dian)(dian)。過(guo)電(dian)(dian)(dian)流的(de)(de)(de)檢(jian)測是以功率MOSFET的(de)(de)(de)Rds(on)為(wei)(wei)感應阻(zu)抗，以監視其電(dian)(dian)(dian)壓的(de)(de)(de)下降(jiang)，此時的(de)(de)(de)電(dian)(dian)(dian)壓若比(bi)過(guo)電(dian)(dian)(dian)流檢(jian)測電(dian)(dian)(dian)壓還高時即停(ting)止放(fang)電(dian)(dian)(dian)。為(wei)(wei)了使(shi)功率MOSFET的(de)(de)(de)Rds(on)在充電(dian)(dian)(dian)電(dian)(dian)(dian)流與放(fang)電(dian)(dian)(dian)電(dian)(dian)(dian)流時有效(xiao)應用，需使(shi)該阻(zu)抗值盡量(liang)低，目前(qian)該阻(zu)抗約為(wei)(wei)20mΩ~30mΩ，這樣(yang)過(guo)電(dian)(dian)(dian)流檢(jian)測電(dian)(dian)(dian)壓就可較(jiao)低。
4.耐高電壓(ya)
電池包(bao)與充電器(qi)連接時瞬間會有高(gao)壓產生，因此(ci)保護IC應(ying)滿足耐高(gao)壓的要求。
5.低電池功耗
在保(bao)護狀態時，其靜態耗電流必須(xu)要小0.1μA。
6.零伏可充電
有些電池在存放(fang)的(de)過程中可能因(yin)為放(fang)太久(jiu)或不正常的(de)原因(yin)導致電壓低到0V，故保護IC需(xu)要在0V時也可以實現充電。
六、保護IC發展展望
如前所述，未來保(bao)護(hu)IC將進一步提高(gao)檢測(ce)電(dian)壓的(de)(de)精密(mi)度、降低保(bao)護(hu)IC的(de)(de)耗電(dian)流和(he)提高(gao)誤(wu)動作(zuo)防止功能等(deng)，同時(shi)充電(dian)器連接端(duan)子的(de)(de)高(gao)耐壓也(ye)是(shi)研(yan)發的(de)(de)重點。 在(zai)封裝(zhuang)方面，目(mu)前已由SOT23-6逐漸轉向SON6封裝(zhuang)，將來還有CSP封裝(zhuang)，甚至出現(xian)(xian)COB產品(pin)用(yong)以滿足(zu)現(xian)(xian)在(zai)所強調(diao)的(de)(de)輕(qing)薄短小要(yao)求。
在功(gong)能方面，保護(hu)IC不需要(yao)整合所有的(de)功(gong)能，可(ke)根據不同的(de)鋰電(dian)池材(cai)料開發(fa)出單(dan)一保護(hu)IC，如只有過充保護(hu)或過放保護(hu)功(gong)能，這樣可(ke)以大幅(fu)減少成本及(ji)尺寸。
當然，功能組件單(dan)(dan)晶(jing)體(ti)化是不(bu)變(bian)的(de)目標，如目前(qian)(qian)手機制造商都朝(chao)向將(jiang)保護(hu)(hu)IC、充電電路(lu)以(yi)及電源管(guan)理(li)IC等周邊電路(lu)與邏輯IC構(gou)成(cheng)雙芯(xin)片(pian)(pian)的(de)芯(xin)片(pian)(pian)組，但(dan)目前(qian)(qian)要使功率MOSFET的(de)開路(lu)阻(zu)抗降低(di)，難以(yi)與其它(ta)IC整合，即使以(yi)特殊技術制成(cheng)單(dan)(dan)芯(xin)片(pian)(pian)，恐怕成(cheng)本將(jiang)會(hui)過(guo)高。因此，保護(hu)(hu)IC的(de)單(dan)(dan)晶(jing)體(ti)化將(jiang)需一段時(shi)間來(lai)解決(jue)。