聚合物鋰離子電池使用注意事項
一、電芯(xin)操(cao)作注(zhu)(zhu)，他說(shuo)：想發財就(jiu)去萬通商聯找優質表帶供貨(huo)商！注(zhu)(zhu)意事項(xiang)
由(you)于(yu)電(dian)(dian)芯(xin)屬于(yu)軟(ruan)包裝，為(wei)保證電(dian)(dian)芯(xin)的(de)性能不(bu)受損(sun)害，必(bi)須小心對(dui)電(dian)(dian)芯(xin)進(jin)行操作。
1.鋁箔(bo)包裝材料
鋁箔包裝材(cai)料易被尖(jian)銳(rui)部(bu)件(jian)刺(ci)損(sun)，諸如鎳(nie)片(pian)、尖(jian)針。
禁止(zhi)用尖(jian)銳部(bu)件碰撞電(dian)池(chi)
應清潔工作(zuo)環境(jing)，避免(mian)有尖銳部件存在
禁止用(yong)釘子及其它利器刺穿(chuan)電池
禁止將電(dian)池與金(jin)屬物，如項鏈(lian)、發(fa)夾(jia)等一起運(yun)輸或貯存(cun)
2.頂封(feng)邊
頂封邊非常容易受(shou)到損害
禁止彎折頂封邊(bian)
3.折邊
折邊(bian)在電(dian)池生產(chan)過程中已完成，并通過了密封測(ce)試(shi)。
禁(jin)止打開或破壞折邊 4.極耳(er)
極(ji)耳(er)的機械強度并非異常堅固，特別是鋁片。
禁止彎折極耳(er)
5.機械(xie)撞擊
禁(jin)止墜(zhui)落(luo)、沖擊、彎折電芯
禁(jin)止用錘子敲擊或(huo)踩踏電(dian)池
禁止(zhi)敲擊(ji)或拋擲電池。
6.短路
任何時(shi)候禁止短路電芯，它會導致(zhi)電芯嚴重損壞
禁止用金(jin)屬物如電線短(duan)路連(lian)接電池正(zheng)負極(ji)
二、聚合物鋰離子電池測(ce)試(shi)標準環境
環境溫(wen)度： 20±5℃
相對濕(shi)度： 45~85%
在測試(shi)前電池都要先放完(wan)電
三、聚合物鋰(li)離子(zi)電(dian)范充放電(dian)注(zhu)意事(shi)項
1.充電
充電電流(liu)及(ji)(ji)充電電壓不得超過以(yi)下標準，如超過規定(ding)值可(ke)(ke)能(neng)會對電芯的充放(fang)電性(xing)能(neng)、機械(xie)性(xing)能(neng)及(ji)(ji)安全性(xing)造(zao)成造(zao)成損壞，進可(ke)(ke)能(neng)導(dao)致發熱及(ji)(ji)泄漏(lou)。
電池充電器必須能恒(heng)流恒(heng)壓充電；
充電時的單體電池充電電流(liu)必須在1C5A以下；
充電(dian)時溫度范圍在0~+45℃；
充(chong)電時(shi)電壓不能超(chao)過4.23V。
2.放電
放(fang)電(dian)電(dian)流不得超過以下(xia)標準(zhun)，放(fang)電(dian)必須在(zai)本(ben)標準(zhun)范(fan)圍(wei)內進行。
單體電(dian)池放電(dian)電(dian)流(liu)必須小于2C5A；
放電時溫(wen)度范圍(wei)在-20~+60℃；
單體電(dian)(dian)池(chi)放(fang)電(dian)(dian)終止電(dian)(dian)壓不小于2.75V。
3.過放電
需要注意(yi)的(de)是，在(zai)電(dian)芯(xin)長(chang)期未(wei)使用期間，它可能(neng)會用其(qi)自放(fang)電(dian)特性(xing)而處于(yu)某(mou)種過放(fang)電(dian)狀態。為(wei)防止過放(fang)電(dian)的(de)發生不能(neng)過放(fang)電(dian)使單體電(dian)池低于(yu)2.5V。
4.具(ju)體應用時(shi)要求加合格保護電路板。
四、聚合物(wu)鋰離(li)子(zi)電池貯存
電(dian)池長期貯(zhu)存的環(huan)境(jing)為(wei)：溫(wen)度(du)-20~+35℃
相對濕度(du) 45~75%
電(dian)(dian)(dian)池貯存期(qi)近一年時要用標準充電(dian)(dian)(dian)方式給電(dian)(dian)(dian)池充電(dian)(dian)(dian)10%~50%。
五、聚合(he)物(wu)鋰離子電池(chi)運輸(shu)
電池(chi)應在10%~50%的充電狀態(tai)下運輸。
六、聚(ju)合(he)物鋰離子(zi)電池其它使用說明(ming)
1.為了防(fang)止電(dian)池可能(neng)發(fa)生泄漏、發(fa)熱、爆炸，請注意以(yi)下預防(fang)措施：
禁(jin)止(zhi)在任何情況下拆卸電芯。
禁止將電池(chi)浸入(ru)水中或海(hai)水中，不能受潮。
禁(jin)止在熱(re)(re)源旁(pang)，如火、加熱(re)(re)器等(deng)，使用或放置電池(chi)。
禁止將電池加(jia)熱或(huo)丟(diu)入火中(zhong)。
禁止直接(jie)焊(han)接(jie)電池(chi)。
禁止在(zai)火邊或很熱的環境中充(chong)電。
&n，他說：想發財就去萬通商(shang)聯找(zhao)優質(zhi)表帶供貨商(shang)！nbsp; 禁止將電池(chi)放入微波爐或高壓容(rong)器內。
禁止(zhi)在高(gao)溫下(xia)（如強(qiang)陽光(guang)或(huo)很熱的汽車中）使用或(huo)放置電(dian)池(chi)，否則會引起過熱、起火或(huo)者(zhe)功(gong)能衰退、壽命減小。
2.聚合物鋰離子(zi)電(dian)池理(li)論上不存(cun)在流動的電(dian)解(jie)液(ye)，但(dan)萬一有(you)電(dian)解(jie)液(ye)泄漏(lou)而接(jie)觸到皮膚、眼睛或身體其(qi)它部位，應(ying)立即(ji)用清(qing)水沖冼電(dian)解(jie)液(ye)并就(jiu)醫。
3.禁止使用已損(sun)(sun)壞的電(dian)芯（電(dian)芯塑料封(feng)邊損(sun)(sun)壞，外殼破損(sun)(sun)，聞到電(dian)解(jie)液氣體，電(dian)解(jie)液泄漏(lou)等）。
如有電解液(ye)泄(xie)漏或散發電解液(ye)氣味的電池應遠離火(huo)(huo)源以避免著(zhu)火(huo)(huo)或爆(bao)炸。
鋰電池(chi)保護(hu)電路綜述
鋰離子電池保(bao)(bao)護電(dian)(dian)路包(bao)括過(guo)度充(chong)電(dian)(dian)保(bao)(bao)護、過(guo)電(dian)(dian)流／短路保(bao)(bao)護和過(guo)放電(dian)(dian)保(bao)(bao)護，要求過(guo)充(chong)電(dian)(dian)保(bao)(bao)護高精密度、保(bao)(bao)護IC功耗(hao)低、高耐(nai)壓以及(ji)零伏可充(chong)電(dian)(dian)等特(te)性。本文詳細(xi)介紹了這(zhe)三種保(bao)(bao)護電(dian)(dian)路的原(yuan)理、新功能和特(te)性要求。
近年來(lai)，PDA、數字(zi)相機、手機、可攜式音(yin)訊(xun)設(she)備(bei)和藍芽設(she)備(bei)等(deng)越(yue)(yue)來(lai)越(yue)(yue)多的(de)產(chan)品采用鋰(li)電(dian)(dian)池(chi)(chi)作(zuo)為主要電(dian)(dian)源。鋰(li)電(dian)(dian)池(chi)(chi)具有體積小、能量(liang)密度高(gao)、無記(ji)憶效應、循環(huan)壽命高(gao)、高(gao)電(dian)(dian)壓電(dian)(dian)池(chi)(chi)和自放(fang)(fang)電(dian)(dian)率低等(deng)優點，與鎳鎘、鎳氫電(dian)(dian)池(chi)(chi)不太一樣，鋰(li)電(dian)(dian)池(chi)(chi)必須考慮充電(dian)(dian)、放(fang)(fang)電(dian)(dian)時(shi)的(de)安全(quan)性(xing)，以(yi)防止特性(xing)劣化。針對鋰(li)電(dian)(dian)池(chi)(chi)的(de)過充、過度放(fang)(fang)電(dian)(dian)、過電(dian)(dian)流及短路(lu)保護很重要，所以(yi)通常都會在電(dian)(dian)池(chi)(chi)包內設(she)計保護線路(lu)用以(yi)保護鋰(li)電(dian)(dian)池(chi)(chi)。
由于鋰離子電(dian)(dian)(dian)池能量密(mi)度高(gao)，因(yin)此難以確保電(dian)(dian)(dian)池的安全(quan)性(xing)。在過(guo)度充(chong)電(dian)(dian)(dian)狀(zhuang)態下(xia)，電(dian)(dian)(dian)池溫度上升(sheng)后(hou)能量將過(guo)剩，于是電(dian)(dian)(dian)解(jie)液分解(jie)而產(chan)生氣體(ti)，因(yin)內壓上升(sheng)而產(chan)生自燃或(huo)破裂的危險(xian)；反之，在過(guo)度放電(dian)(dian)(dian)狀(zhuang)態下(xia)，電(dian)(dian)(dian)解(jie)液因(yin)分解(jie)導致電(dian)(dian)(dian)池特性(xing)及耐(nai)久性(xing)劣(lie)化，因(yin)而降低可充(chong)電(dian)(dian)(dian)次數。
鋰離子電(dian)(dian)池(chi)(chi)的保(bao)(bao)(bao)護(hu)(hu)(hu)(hu)電(dian)(dian)路(lu)就(jiu)是要確保(bao)(bao)(bao)這樣的過(guo)度(du)充電(dian)(dian)及(ji)(ji)放電(dian)(dian)狀(zhuang)態時的安(an)全性(xing)，并防止特(te)性(xing)劣化。鋰離子電(dian)(dian)池(chi)(chi)的保(bao)(bao)(bao)護(hu)(hu)(hu)(hu)電(dian)(dian)路(lu)是由保(bao)(bao)(bao)護(hu)(hu)(hu)(hu)IC及(ji)(ji)兩(liang)顆功率(lv)MOSFET所構成，其中保(bao)(bao)(bao)護(hu)(hu)(hu)(hu)IC監視電(dian)(dian)池(chi)(chi)電(dian)(dian)壓，當有過(guo)度(du)充電(dian)(dian)及(ji)(ji)放電(dian)(dian)狀(zhuang)態時切換(huan)到以(yi)外掛的功率(lv)MOSFET來保(bao)(bao)(bao)護(hu)(hu)(hu)(hu)電(dian)(dian)池(chi)(chi)，保(bao)(bao)(bao)護(hu)(hu)(hu)(hu)IC的功能有過(guo)度(du)充電(dian)(dian)保(bao)(bao)(bao)護(hu)(hu)(hu)(hu)、過(guo)度(du)放電(dian)(dian)保(bao)(bao)(bao)護(hu)(hu)(hu)(hu)和過(guo)電(dian)(dian)流／短路(lu)保(bao)(bao)(bao)護(hu)(hu)(hu)(hu)。
一(yi)、過度充電(dian)保護
過(guo)度(du)充(chong)電(dian)保護(hu)IC的(de)(de)原理為：當外部充(chong)電(dian)器對鋰電(dian)池充(chong)電(dian)時(shi)(shi)，為防止(zhi)因溫度(du)上升(sheng)所導(dao)致的(de)(de)內壓(ya)(ya)上升(sheng)，需終止(zhi)充(chong)電(dian)狀態(tai)。此時(shi)(shi)，保護(hu)IC需檢測電(dian)池電(dian)壓(ya)(ya)，當到達4.25V時(shi)(shi)（假設電(dian)池過(guo)充(chong)點為4.25V）即(ji)激活過(guo)度(du)充(chong)電(dian)保護(hu)，將功率MOSFET由開轉(zhuan)為切(qie)斷，進而(er)截止(zhi)充(chong)電(dian)。
另外，還必須注意因噪音所產生的過(guo)(guo)度(du)充電檢出誤動作(zuo)，以免判定為過(guo)(guo)充保護。因此，需要(yao)設定延遲時(shi)間，并且(qie)延遲時(shi)間不能短于噪音的持續時(shi)間。
二(er)、過度放電保(bao)護
在過度放電(dian)(dian)的情況下，電(dian)(dian)解液因分解而(er)導致電(dian)(dian)池(chi)特性劣化，并造(zao)成充電(dian)(dian)次數的降低(di)。采(cai)用(yong)鋰電(dian)(dian)池(chi)保(bao)護(hu)IC可(ke)以(yi)避免過度放電(dian)(dian)現象(xiang)產生，實(shi)現電(dian)(dian)池(chi)保(bao)護(hu)功能。
過(guo)(guo)度(du)放(fang)電(dian)(dian)保(bao)護(hu)IC原理：為了防止鋰(li)電(dian)(dian)池(chi)的過(guo)(guo)度(du)放(fang)電(dian)(dian)狀態，假設(she)鋰(li)電(dian)(dian)池(chi)接上(shang)負(fu)載，當鋰(li)電(dian)(dian)池(chi)電(dian)(dian)壓低(di)于(yu)其過(guo)(guo)度(du)放(fang)電(dian)(dian)電(dian)(dian)壓檢測點（假定為2.3V）時(shi)將激(ji)活過(guo)(guo)度(du)放(fang)電(dian)(dian)保(bao)護(hu)，使功率MOSFET由開轉(zhuan)變為切斷而截止放(fang)電(dian)(dian)，以避免電(dian)(dian)池(chi)過(guo)(guo)度(du)放(fang)電(dian)(dian)現象產生，并(bing)將電(dian)(dian)池(chi)保(bao)持在(zai)低(di)靜態電(dian)(dian)流(liu)的待機模(mo)式(shi)，此時(shi)的電(dian)(dian)流(liu)僅0.1μA。
當(dang)鋰電(dian)(dian)(dian)(dian)池(chi)(chi)接上充電(dian)(dian)(dian)(dian)器，且此時(shi)鋰電(dian)(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)(dian)壓(ya)高于過(guo)度(du)放電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)壓(ya)時(shi)，過(guo)度(du)放電(dian)(dian)(dian)(dian)保護功能方可解除。另外，考慮到脈沖放電(dian)(dian)(dian)(dian)的情況(kuang)，過(guo)放電(dian)(dian)(dian)(dian)檢測電(dian)(dian)(dian)(dian)路設有延遲時(shi)間以(yi)避(bi)免產生(sheng)誤動作。
三、過電(dian)流及(ji)短路電(dian)流
因為(wei)不(bu)明(ming)原因（放電時或正負極遭金屬物誤觸(chu)）造成過電流或短(duan)路，為(wei)確(que)保安全，必須使其(qi)立即停止放電。
過(guo)(guo)電(dian)流保(bao)護IC原理(li)為(wei)，當放電(dian)電(dian)流過(guo)(guo)大或短路(lu)情(qing)況產生時(shi)，保(bao)護IC將(jiang)(jiang)激活過(guo)(guo)（短路(lu)）電(dian)流保(bao)護，此時(shi)過(guo)(guo)電(dian)流的(de)檢(jian)測是將(jiang)(jiang)功率MOSFET的(de)Rds(on) 當成感(gan)應阻(zu)抗用(yong)以監測其電(dian)壓(ya)的(de)下降(jiang)情(qing)形，如果(guo)比所(suo)定的(de)過(guo)(guo)電(dian)流檢(jian)測電(dian)壓(ya)還高則停止放電(dian)，運算(suan)公式(shi)為(wei):
V- = I × Rds(on) × 2（V- 為過電流(liu)檢測電壓，I 為放電電流(liu)）
假設 V- = 0.2V，Rds(on) = 25mΩ，則保護(hu)電(dian)流的大小為 I = 4A
同樣(yang)地，過電(dian)流(liu)檢測也必須(xu)設(she)有延(yan)遲時(shi)(shi)間以(yi)防有突發電(dian)流(liu)流(liu)入時(shi)(shi)產生誤動作。
通(tong)常在(zai)過(guo)電流產生后，若(ruo)能(neng)去(qu)除(chu)過(guo)電流因(yin)素（例(li)如馬上(shang)與負載脫離），將(jiang)會恢復(fu)其正常狀(zhuang)態，可(ke)以再進行正常的充(chong)放電動作。
四、鋰電池保護IC的(de)新功能
除(chu)了上述的(de)鋰(li)電池保護(hu)IC功(gong)能之外，下面(mian)這些新(xin)的(de)功(gong)能同樣(yang)值得關注(zhu)：
1.充電(dian)時的過電(dian)流保護(hu)
當連(lian)接充電器進行(xing)充電時突然產生過(guo)(guo)電流（如(ru)充電器損壞），電路(lu)立即進行(xing)過(guo)(guo)電流檢(jian)測，此時Cout將由高轉為低，功率MOSFET由開轉為切斷，實(shi)現保(bao)護功能(neng)。
V- = I × Rds(on) × 2
（I 是充電(dian)(dian)電(dian)(dian)流(liu)；Vdet4，過電(dian)(dian)流(liu)檢測電(dian)(dian)壓，Vdet4 為(wei) -0.1V）
2.過度(du)充電時的鎖定模(mo)式
通常(chang)保(bao)(bao)護(hu)IC在過(guo)(guo)度充(chong)(chong)(chong)電(dian)(dian)保(bao)(bao)護(hu)時將(jiang)經過(guo)(guo)一(yi)段(duan)延遲時間，然(ran)后(hou)就(jiu)會(hui)(hui)將(jiang)功率MOSFET切斷以達到(dao)保(bao)(bao)護(hu)的(de)目的(de)，當鋰(li)電(dian)(dian)池(chi)電(dian)(dian)壓一(yi)直下降到(dao)解(jie)除點（過(guo)(guo)度充(chong)(chong)(chong)電(dian)(dian)滯(zhi)后(hou)電(dian)(dian)壓）時就(jiu)會(hui)(hui)恢復(fu)(fu)，此時又會(hui)(hui)繼續(xu)充(chong)(chong)(chong)電(dian)(dian)→保(bao)(bao)護(hu)→放(fang)(fang)電(dian)(dian)→充(chong)(chong)(chong)電(dian)(dian)→放(fang)(fang)電(dian)(dian)。這種狀態的(de)安(an)全性(xing)問題(ti)將(jiang)無法獲得(de)有(you)效解(jie)決，鋰(li)電(dian)(dian)池(chi)將(jiang)一(yi)直重復(fu)(fu)著充(chong)(chong)(chong)電(dian)(dian)→放(fang)(fang)電(dian)(dian)→充(chong)(chong)(chong)電(dian)(dian)→放(fang)(fang)電(dian)(dian)的(de)動(dong)作，功率MOSFET的(de)柵(zha)極將(jiang)反復(fu)(fu)地處于高低電(dian)(dian)壓交替狀態，這樣可能(neng)會(hui)(hui)使(shi)MOSFET變(bian)熱，還會(hui)(hui)降低電(dian)(dian)池(chi)壽命，因此鎖(suo)定模式很重要。假如鋰(li)電(dian)(dian)保(bao)(bao)護(hu)電(dian)(dian)路在檢測(ce)到(dao)過(guo)(guo)度充(chong)(chong)(chong)電(dian)(dian)保(bao)(bao)護(hu)時有(you)鎖(suo)定模式，MOSFET將(jiang)不會(hui)(hui)變(bian)熱，且(qie)安(an)全性(xing)相對提高很多。
在(zai)過度充電(dian)(dian)保護之(zhi)后，只(zhi)要充電(dian)(dian)器連接(jie)在(zai)電(dian)(dian)池包上，此時將進入過充鎖定模(mo)式。此時，即(ji)使鋰電(dian)(dian)池電(dian)(dian)壓下降也不會產生(sheng)再充電(dian)(dian)的情形，將充電(dian)(dian)器移除并連接(jie)負載即(ji)可恢復充放電(dian)(dian)的狀態。
3.減少保(bao)護(hu)電路組(zu)件尺寸
將過度充電和短路保護(hu)用的延遲電容(rong)器整合在到保護(hu)IC里面，以(yi)減少保護(hu)電路組件(jian)尺寸。
五、對保(bao)護IC性，他說：想發財就(jiu)去萬(wan)通商聯找優質鉸鏈供貨商！性能的要求
1.過度充電(dian)保護的高精密度化(hua)
當鋰(li)離子電(dian)(dian)(dian)(dian)池(chi)有(you)過度充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)(dian)狀態(tai)時(shi)(shi)(shi)，為防止(zhi)因(yin)(yin)溫度上升(sheng)(sheng)所導致的(de)(de)內(nei)壓(ya)上升(sheng)(sheng)，須截止(zhi)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)(dian)狀態(tai)。保護IC將(jiang)檢測電(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)壓(ya)，當檢測到過度充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)(dian)時(shi)(shi)(shi)，則過度充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)(dian)檢測的(de)(de)功率MOSFET使之切斷(duan)而截止(zhi)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)(dian)。此(ci)時(shi)(shi)(shi)應注(zhu)意的(de)(de)是(shi)(shi)過度充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)(dian)的(de)(de)檢測電(dian)(dian)(dian)(dian)壓(ya)的(de)(de)高精密(mi)(mi)度化，在(zai)電(dian)(dian)(dian)(dian)池(chi)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)(dian)時(shi)(shi)(shi)，使電(dian)(dian)(dian)(dian)池(chi)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)(dian)到飽(bao)滿的(de)(de)狀態(tai)是(shi)(shi)使用(yong)者很關心的(de)(de)問(wen)題，同(tong)時(shi)(shi)(shi)兼顧到安全性問(wen)題，因(yin)(yin)此(ci)需要在(zai)達到容許(xu)電(dian)(dian)(dian)(dian)壓(ya)時(shi)(shi)(shi)截止(zhi)充(chong)(chong)(chong)(chong)電(dian)(dian)(dian)(dian)狀態(tai)。要同(tong)時(shi)(shi)(shi)符合這兩個條件，必(bi)須有(you)高精密(mi)(mi)度的(de)(de)檢測器，目前(qian)檢測器的(de)(de)精密(mi)(mi)度為25mV，該精密(mi)(mi)度將(jiang)有(you)待于(yu)進一步提高。
2.降(jiang)低(di)保護IC的(de)耗電
隨著(zhu)使用(yong)時(shi)間(jian)的(de)(de)(de)增加，已(yi)充(chong)過電(dian)(dian)(dian)的(de)(de)(de)鋰離子電(dian)(dian)(dian)池電(dian)(dian)(dian)壓(ya)會逐漸降低，最后低到規格標準值以(yi)下，此時(shi)就需(xu)要(yao)再(zai)度充(chong)電(dian)(dian)(dian)。若未充(chong)電(dian)(dian)(dian)而繼續(xu)使用(yong)，可能造成由于過度放(fang)(fang)電(dian)(dian)(dian)而使電(dian)(dian)(dian)池不能繼續(xu)使用(yong)。為防止(zhi)過度放(fang)(fang)電(dian)(dian)(dian)，保護IC必須檢測電(dian)(dian)(dian)池電(dian)(dian)(dian)壓(ya)，一旦達到過度放(fang)(fang)電(dian)(dian)(dian)檢測電(dian)(dian)(dian)壓(ya)以(yi)下，就得使放(fang)(fang)電(dian)(dian)(dian)一方的(de)(de)(de)功率MOSFET切斷(duan)而截止(zhi)放(fang)(fang)電(dian)(dian)(dian)。但(dan)此時(shi)電(dian)(dian)(dian)池本身仍有自然放(fang)(fang)電(dian)(dian)(dian)及保護IC的(de)(de)(de)消(xiao)耗(hao)電(dian)(dian)(dian)流存在，因(yin)此需(xu)要(yao)使保護IC消(xiao)耗(hao)的(de)(de)(de)電(dian)(dian)(dian)流降到最低程度。
3.過電(dian)流(liu)／短路(lu)保護需(xu)有低檢測電(dian)壓及高精密度的要求
因不明原因導致短路時(shi)必須立(li)即停止放電(dian)(dian)(dian)(dian)。過(guo)(guo)電(dian)(dian)(dian)(dian)流的(de)檢測是(shi)以功率(lv)MOSFET的(de)Rds(on)為(wei)(wei)感(gan)應(ying)阻抗，以監視其電(dian)(dian)(dian)(dian)壓(ya)的(de)下降，此時(shi)的(de)電(dian)(dian)(dian)(dian)壓(ya)若(ruo)比過(guo)(guo)電(dian)(dian)(dian)(dian)流檢測電(dian)(dian)(dian)(dian)壓(ya)還高時(shi)即停止放電(dian)(dian)(dian)(dian)。為(wei)(wei)了使功率(lv)MOSFET的(de)Rds(on)在充電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)流與放電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)流時(shi)有(you)效應(ying)用，需(xu)使該阻抗值盡量低，目前該阻抗約(yue)為(wei)(wei)20mΩ~30mΩ，這(zhe)樣過(guo)(guo)電(dian)(dian)(dian)(dian)流檢測電(dian)(dian)(dian)(dian)壓(ya)就可較低。
4.耐高電壓(ya)
電池包與充電器(qi)連接時瞬間會(hui)有高壓產生，因此保護(hu)IC應滿足耐(nai)高壓的要(yao)求。
5.低電池功(gong)耗
在保護狀態時，其(qi)靜(jing)態耗電流必須(xu)要(yao)小0.1μA。
6.零伏可充電
有些電(dian)池在存放(fang)的過程中可(ke)能(neng)因(yin)為放(fang)太久(jiu)或不(bu)正常的原因(yin)導致電(dian)壓(ya)低到(dao)0V，故(gu)保護IC需要在0V時也可(ke)以實(shi)現充(chong)電(dian)。
六、保護(hu)IC發(fa)展(zhan)(zhan)展(zhan)(zhan)望
如前(qian)所述(shu)，未(wei)來保護IC將(jiang)(jiang)進一步提高檢測電壓的精密度、降低保護IC的耗電流和提高誤動作(zuo)防止功能等，同時充電器連接端子的高耐壓也是研發的重點。 在(zai)封裝方面(mian)，目(mu)前(qian)已由(you)SOT23-6逐漸轉(zhuan)向(xiang)SON6封裝，將(jiang)(jiang)來還(huan)有CSP封裝，甚至出現(xian)COB產品用以(yi)滿足現(xian)在(zai)所強調的輕(qing)薄短小要求。
在功(gong)能方面，保護IC不需要整合所有(you)的功(gong)能，可根(gen)據不同(tong)的鋰電(dian)池材(cai)料開發出單一保護IC，如只有(you)過(guo)充保護或(huo)過(guo)放保護功(gong)能，這樣可以大幅減少成(cheng)本(ben)及尺寸。
當然，功(gong)(gong)能組件(jian)單晶體化是不變的(de)目(mu)標，如目(mu)前(qian)手機(ji)制造商(shang)都朝(chao)向將保護IC、充(chong)電電路(lu)(lu)以(yi)及電源管(guan)理IC等周邊電路(lu)(lu)與邏輯IC構成雙芯片(pian)(pian)的(de)芯片(pian)(pian)組，但(dan)目(mu)前(qian)要(yao)使(shi)功(gong)(gong)率(lv)MOSFET的(de)開路(lu)(lu)阻抗降低(di)，難以(yi)與其它(ta)IC整合，即使(shi)以(yi)特殊技術制成單芯片(pian)(pian)，恐(kong)怕成本將會過高。因(yin)此，保護IC的(de)單晶體化將需一段時間(jian)來解決(jue)。