聚合物鋰離子電池使用注意事項
一、電(dian)芯操作注，他說：想(xiang)發財就去萬通商(shang)聯找優質表帶供貨商(shang)！注意事(shi)項
由(you)于電(dian)芯屬(shu)于軟包裝，為保(bao)證(zheng)電(dian)芯的(de)性能不受損害，必須小心對電(dian)芯進(jin)行操作(zuo)。
1.鋁箔包(bao)裝材料(liao)
鋁箔(bo)包裝材料易被尖(jian)銳部件刺損，諸(zhu)如鎳(nie)片、尖(jian)針。
禁止用尖(jian)銳(rui)部件碰撞電池
應(ying)清潔工作(zuo)環(huan)境，避免(mian)有尖銳部件(jian)存在
禁(jin)止(zhi)用釘子及其它(ta)利器刺(ci)穿電池(chi)
禁止將電池與金屬物，如項鏈、發夾等一起運(yun)輸或(huo)貯存
2.頂封(feng)邊
頂封邊非常容易受到(dao)損(sun)害
禁止彎折(zhe)頂封邊(bian)
3.折邊
折邊在電池生產(chan)過程中已完成，并通過了密封測試。
禁止打開或(huo)破壞折邊 4.極耳
極(ji)耳(er)的機械強度并非異常堅固，特別是鋁片。
禁止彎折極(ji)耳(er)
5.機(ji)械撞(zhuang)擊
禁(jin)止墜落(luo)、沖擊(ji)、彎折電(dian)芯
禁止用(yong)錘子敲擊或踩踏電(dian)池
禁止敲擊或(huo)拋擲電池。
6.短路(lu)
任何時候(hou)禁止短路電芯，它會(hui)導致電芯嚴重損壞
禁止用金屬物如(ru)電(dian)線短路連(lian)接電(dian)池正負(fu)極
二(er)、聚合物鋰離子電池測試(shi)標準(zhun)環境
環境溫度： 20±5℃
相對(dui)濕度： 45~85%
在測試前電(dian)池都要先(xian)放完電(dian)
三(san)、聚合物鋰離(li)子電(dian)范(fan)充放電(dian)注意事(shi)項(xiang)
1.充電
充(chong)電(dian)(dian)(dian)電(dian)(dian)(dian)流及充(chong)電(dian)(dian)(dian)電(dian)(dian)(dian)壓(ya)不得超過(guo)以下標準，如(ru)超過(guo)規定值可能會對(dui)電(dian)(dian)(dian)芯的充(chong)放(fang)電(dian)(dian)(dian)性(xing)能、機械(xie)性(xing)能及安全(quan)性(xing)造(zao)成(cheng)造(zao)成(cheng)損壞，進可能導致發熱及泄漏。
電池充電器必(bi)須能恒(heng)(heng)流恒(heng)(heng)壓充(chong)電；
充(chong)電時的單體(ti)電池充(chong)電電流必須在1C5A以下；
充(chong)電時溫度范圍在0~+45℃；
充電(dian)(dian)時電(dian)(dian)壓不(bu)能超過4.23V。
2.放電
放(fang)電(dian)(dian)電(dian)(dian)流(liu)不得(de)超過以下標準，放(fang)電(dian)(dian)必須在本標準范圍內(nei)進行(xing)。
單體電(dian)池放電(dian)電(dian)流必須小于2C5A；
放電時溫(wen)度范圍在-20~+60℃；
單體電池(chi)放電終(zhong)止電壓不小于2.75V。
3.過放電
需要注意(yi)的(de)是，在電芯長期未使用期間，它可能(neng)會用其自(zi)放(fang)電特性而(er)處于某種過放(fang)電狀態。為防止過放(fang)電的(de)發生不能(neng)過放(fang)電使單(dan)體電池低(di)于2.5V。
4.具體應用時要求加合格保護電路板。
四(si)、聚合物(wu)鋰(li)離子電池貯存
電池(chi)長期貯(zhu)存的(de)環境為：溫度-20~+35℃
相對(dui)濕度 45~75%
電(dian)(dian)池(chi)貯存期(qi)近(jin)一年(nian)時要用標(biao)準充電(dian)(dian)方(fang)式(shi)給電(dian)(dian)池(chi)充電(dian)(dian)10%~50%。
五、聚合物鋰離子(zi)電(dian)池運(yun)輸
電池(chi)應(ying)在10%~50%的充電狀態下運輸。
六(liu)、聚合(he)物鋰離子電池其它(ta)使用說明(ming)
1.為了防(fang)止電池可能(neng)發(fa)生(sheng)泄漏、發(fa)熱、爆炸，請注意以下預防(fang)措施(shi)：
禁(jin)止(zhi)在任何(he)情況下拆卸電芯。
禁(jin)止將電池浸入水(shui)(shui)中或海水(shui)(shui)中，不能(neng)受潮。
禁止在熱源旁，如(ru)火、加熱器等(deng)，使(shi)用或放置電池。
禁止將(jiang)電池(chi)加(jia)熱或丟入火中。
禁(jin)止直(zhi)接焊接電池。
禁止在火邊或很熱的環境中充電。
&n，他說：想發財就去萬通商聯找優質表(biao)帶供貨商！nbsp; 禁(jin)止將電(dian)池放入微(wei)波(bo)爐或高壓容(rong)器內。
禁(jin)止在高溫(wen)下（如(ru)強(qiang)陽光或(huo)(huo)很(hen)熱(re)的汽車中）使用或(huo)(huo)放置電池，否則會引起過(guo)熱(re)、起火或(huo)(huo)者功能衰退、壽命減(jian)小。
2.聚合物鋰(li)離子(zi)電(dian)池理論上不存在流動的電(dian)解液，但(dan)萬(wan)一有(you)電(dian)解液泄漏而接(jie)觸到皮膚、眼睛(jing)或身體其它部位，應(ying)立(li)即用清水沖冼電(dian)解液并就醫。
3.禁止(zhi)使用已(yi)損壞的電(dian)芯(xin)（電(dian)芯(xin)塑料(liao)封(feng)邊損壞，外殼破(po)損，聞到電(dian)解(jie)液氣體，電(dian)解(jie)液泄漏等(deng)）。
如有電解液泄(xie)漏或(huo)散發電解液氣味的(de)電池應遠(yuan)離火源以避免(mian)著火或(huo)爆炸。
鋰(li)電池(chi)保(bao)護(hu)電路綜述
鋰離子電池保護(hu)電(dian)路(lu)包括過(guo)度(du)充電(dian)保護(hu)、過(guo)電(dian)流／短路(lu)保護(hu)和過(guo)放電(dian)保護(hu)，要(yao)(yao)求過(guo)充電(dian)保護(hu)高(gao)精密度(du)、保護(hu)IC功耗(hao)低、高(gao)耐壓以及零(ling)伏可充電(dian)等特性(xing)。本文詳細(xi)介紹了這三(san)種(zhong)保護(hu)電(dian)路(lu)的(de)原理、新功能和特性(xing)要(yao)(yao)求。
近年(nian)來，PDA、數(shu)字相機(ji)、手機(ji)、可攜(xie)式音訊(xun)設(she)備和藍芽設(she)備等越來越多(duo)的產品采用鋰(li)(li)電(dian)(dian)(dian)(dian)池(chi)作為主(zhu)要電(dian)(dian)(dian)(dian)源。鋰(li)(li)電(dian)(dian)(dian)(dian)池(chi)具有(you)體積小、能量(liang)密(mi)度高(gao)、無(wu)記(ji)憶效應、循環壽命(ming)高(gao)、高(gao)電(dian)(dian)(dian)(dian)壓電(dian)(dian)(dian)(dian)池(chi)和自放電(dian)(dian)(dian)(dian)率低等優點，與(yu)鎳鎘、鎳氫電(dian)(dian)(dian)(dian)池(chi)不太一樣，鋰(li)(li)電(dian)(dian)(dian)(dian)池(chi)必須考(kao)慮(lv)充電(dian)(dian)(dian)(dian)、放電(dian)(dian)(dian)(dian)時的安全(quan)性，以防止特性劣(lie)化(hua)。針對(dui)鋰(li)(li)電(dian)(dian)(dian)(dian)池(chi)的過充、過度放電(dian)(dian)(dian)(dian)、過電(dian)(dian)(dian)(dian)流及(ji)短路保(bao)護(hu)很重要，所以通常都會在(zai)電(dian)(dian)(dian)(dian)池(chi)包內設(she)計(ji)保(bao)護(hu)線(xian)路用以保(bao)護(hu)鋰(li)(li)電(dian)(dian)(dian)(dian)池(chi)。
由(you)于鋰離(li)子(zi)電(dian)(dian)(dian)池能量密度高，因(yin)此難以確保電(dian)(dian)(dian)池的安全性。在(zai)過(guo)(guo)度充電(dian)(dian)(dian)狀(zhuang)態(tai)下(xia)(xia)，電(dian)(dian)(dian)池溫度上升(sheng)(sheng)后能量將(jiang)過(guo)(guo)剩，于是電(dian)(dian)(dian)解(jie)液分(fen)解(jie)而產生氣(qi)體，因(yin)內壓上升(sheng)(sheng)而產生自燃或破裂的危險；反之(zhi)，在(zai)過(guo)(guo)度放(fang)電(dian)(dian)(dian)狀(zhuang)態(tai)下(xia)(xia)，電(dian)(dian)(dian)解(jie)液因(yin)分(fen)解(jie)導致(zhi)電(dian)(dian)(dian)池特(te)性及耐久(jiu)性劣化，因(yin)而降低可充電(dian)(dian)(dian)次數。
鋰離子電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)保(bao)護(hu)(hu)(hu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)就是(shi)要確保(bao)這樣的(de)(de)過(guo)度充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)狀(zhuang)態時的(de)(de)安(an)全性，并防止特性劣(lie)化。鋰離子電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)的(de)(de)保(bao)護(hu)(hu)(hu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)是(shi)由保(bao)護(hu)(hu)(hu)IC及(ji)兩(liang)顆功率MOSFET所構成(cheng)，其中保(bao)護(hu)(hu)(hu)IC監(jian)視電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓，當有過(guo)度充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)及(ji)放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)狀(zhuang)態時切(qie)換到(dao)以外(wai)掛的(de)(de)功率MOSFET來保(bao)護(hu)(hu)(hu)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)，保(bao)護(hu)(hu)(hu)IC的(de)(de)功能(neng)有過(guo)度充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)保(bao)護(hu)(hu)(hu)、過(guo)度放電(dian)(dian)(dian)(dian)(dian)(dian)(dian)保(bao)護(hu)(hu)(hu)和(he)過(guo)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流／短(duan)路(lu)(lu)保(bao)護(hu)(hu)(hu)。
一、過度充(chong)電保護
過度(du)充(chong)(chong)電(dian)保(bao)護(hu)IC的原(yuan)理為(wei)(wei)：當(dang)外部充(chong)(chong)電(dian)器對鋰電(dian)池(chi)充(chong)(chong)電(dian)時(shi)，為(wei)(wei)防止因溫度(du)上升(sheng)所(suo)導致的內壓上升(sheng)，需(xu)終止充(chong)(chong)電(dian)狀(zhuang)態。此時(shi)，保(bao)護(hu)IC需(xu)檢測(ce)電(dian)池(chi)電(dian)壓，當(dang)到達(da)4.25V時(shi)（假設電(dian)池(chi)過充(chong)(chong)點為(wei)(wei)4.25V）即(ji)激活過度(du)充(chong)(chong)電(dian)保(bao)護(hu)，將(jiang)功率MOSFET由開轉為(wei)(wei)切(qie)斷，進而截止充(chong)(chong)電(dian)。
另外，還必須注意(yi)因噪音(yin)所產(chan)生(sheng)的過度充(chong)(chong)電檢(jian)出誤動作，以免(mian)判(pan)定(ding)為(wei)過充(chong)(chong)保(bao)護。因此，需要設定(ding)延遲時(shi)(shi)間，并且延遲時(shi)(shi)間不(bu)能短于噪音(yin)的持續(xu)時(shi)(shi)間。
二、過度(du)放(fang)電保(bao)護
在過(guo)(guo)度放電(dian)的情(qing)況下，電(dian)解(jie)液因分解(jie)而導致(zhi)電(dian)池特性劣化(hua)，并造成充電(dian)次數的降低。采(cai)用鋰電(dian)池保護IC可以(yi)避免過(guo)(guo)度放電(dian)現象產生(sheng)，實現電(dian)池保護功能。
過度放電(dian)(dian)保(bao)(bao)護IC原理：為(wei)了(le)防(fang)止(zhi)鋰電(dian)(dian)池的(de)過度放電(dian)(dian)狀(zhuang)態，假設鋰電(dian)(dian)池接上(shang)負(fu)載，當(dang)鋰電(dian)(dian)池電(dian)(dian)壓低于其過度放電(dian)(dian)電(dian)(dian)壓檢測點（假定(ding)為(wei)2.3V）時(shi)將(jiang)(jiang)激活(huo)過度放電(dian)(dian)保(bao)(bao)護，使功(gong)率(lv)MOSFET由開(kai)轉變為(wei)切斷(duan)而截止(zhi)放電(dian)(dian)，以避免電(dian)(dian)池過度放電(dian)(dian)現象(xiang)產(chan)生，并將(jiang)(jiang)電(dian)(dian)池保(bao)(bao)持在(zai)低靜態電(dian)(dian)流的(de)待(dai)機模式，此時(shi)的(de)電(dian)(dian)流僅(jin)0.1μA。
當鋰電(dian)(dian)池接上充(chong)電(dian)(dian)器，且此(ci)時鋰電(dian)(dian)池電(dian)(dian)壓高于過(guo)度放(fang)電(dian)(dian)電(dian)(dian)壓時，過(guo)度放(fang)電(dian)(dian)保護(hu)功能(neng)方可(ke)解除。另外，考慮(lv)到脈沖放(fang)電(dian)(dian)的情況，過(guo)放(fang)電(dian)(dian)檢測電(dian)(dian)路設有延遲時間以避免(mian)產生誤動作(zuo)。
三、過電流(liu)(liu)及短路電流(liu)(liu)
因為不明原因（放電(dian)時或正負極(ji)遭金屬物誤觸）造成(cheng)過(guo)電(dian)流或短路，為確保安全，必須使(shi)其(qi)立即(ji)停止放電(dian)。
過(guo)電流(liu)保(bao)護(hu)IC原理為，當放電電流(liu)過(guo)大或(huo)短路(lu)情況產生時，保(bao)護(hu)IC將激活過(guo)（短路(lu)）電流(liu)保(bao)護(hu)，此(ci)時過(guo)電流(liu)的(de)檢(jian)測(ce)(ce)是(shi)將功率MOSFET的(de)Rds(on) 當成感(gan)應阻抗用以(yi)監(jian)測(ce)(ce)其電壓(ya)的(de)下降情形，如果比所定的(de)過(guo)電流(liu)檢(jian)測(ce)(ce)電壓(ya)還高則(ze)停止(zhi)放電，運算(suan)公式為:
V- = I × Rds(on) × 2（V- 為(wei)過電(dian)流檢測電(dian)壓，I 為(wei)放電(dian)電(dian)流）
假(jia)設(she) V- = 0.2V，Rds(on) = 25mΩ，則(ze)保護電流(liu)的大小為 I = 4A
同樣地，過電流(liu)檢測也必須(xu)設有延遲時間以防有突(tu)發電流(liu)流(liu)入時產生誤動(dong)作。
通(tong)常在過(guo)電(dian)流產生后(hou)，若能去(qu)除過(guo)電(dian)流因(yin)素（例如馬上與(yu)負載脫離），將會恢復其正常狀態，可以再進行正常的充放電(dian)動作。
四、鋰電池保護IC的(de)新功能
除(chu)了(le)上述的鋰(li)電池保護IC功(gong)能之外，下面這(zhe)些新的功(gong)能同樣(yang)值得(de)關(guan)注：
1.充電時的過(guo)電流保護
當連接充(chong)(chong)電(dian)器(qi)進行充(chong)(chong)電(dian)時(shi)突(tu)然產生過電(dian)流(liu)（如充(chong)(chong)電(dian)器(qi)損壞），電(dian)路立即(ji)進行過電(dian)流(liu)檢測，此時(shi)Cout將由高轉為低(di)，功(gong)(gong)率(lv)MOSFET由開轉為切斷(duan)，實現(xian)保護功(gong)(gong)能(neng)。
V- = I × Rds(on) × 2
（I 是充電(dian)電(dian)流(liu)；Vdet4，過電(dian)流(liu)檢測電(dian)壓(ya)，Vdet4 為 -0.1V）
2.過度充電(dian)時的鎖(suo)定模式
通常(chang)保(bao)護IC在過度(du)充(chong)電(dian)保(bao)護時(shi)(shi)將(jiang)經(jing)過一段延遲(chi)時(shi)(shi)間，然后就會將(jiang)功(gong)率(lv)MOSFET切(qie)斷(duan)以達到保(bao)護的(de)目的(de)，當(dang)鋰電(dian)池(chi)電(dian)壓(ya)一直(zhi)下(xia)降到解除(chu)點（過度(du)充(chong)電(dian)滯后電(dian)壓(ya)）時(shi)(shi)就會恢復(fu)(fu)，此時(shi)(shi)又會繼續充(chong)電(dian)→保(bao)護→放電(dian)→充(chong)電(dian)→放電(dian)。這(zhe)種狀(zhuang)態的(de)安全性問題(ti)將(jiang)無(wu)法獲得有(you)效解決，鋰電(dian)池(chi)將(jiang)一直(zhi)重復(fu)(fu)著(zhu)充(chong)電(dian)→放電(dian)→充(chong)電(dian)→放電(dian)的(de)動作，功(gong)率(lv)MOSFET的(de)柵極將(jiang)反復(fu)(fu)地處于(yu)高低電(dian)壓(ya)交替狀(zhuang)態，這(zhe)樣可能會使MOSFET變熱(re)，還會降低電(dian)池(chi)壽命，因此鎖(suo)定(ding)模式(shi)很(hen)重要。假如鋰電(dian)保(bao)護電(dian)路在檢測到過度(du)充(chong)電(dian)保(bao)護時(shi)(shi)有(you)鎖(suo)定(ding)模式(shi)，MOSFET將(jiang)不會變熱(re)，且安全性相(xiang)對提(ti)高很(hen)多。
在(zai)過(guo)度充(chong)(chong)電(dian)(dian)(dian)保(bao)護之后(hou)，只要充(chong)(chong)電(dian)(dian)(dian)器連(lian)接(jie)在(zai)電(dian)(dian)(dian)池包上，此(ci)時(shi)將進入過(guo)充(chong)(chong)鎖定模(mo)式(shi)。此(ci)時(shi)，即使鋰(li)電(dian)(dian)(dian)池電(dian)(dian)(dian)壓下降也不會產(chan)生(sheng)再(zai)充(chong)(chong)電(dian)(dian)(dian)的(de)情(qing)形(xing)，將充(chong)(chong)電(dian)(dian)(dian)器移除并連(lian)接(jie)負載(zai)即可恢復充(chong)(chong)放電(dian)(dian)(dian)的(de)狀態。
3.減少(shao)保護電路組(zu)件尺寸(cun)
將過(guo)度(du)充電和短路(lu)保(bao)護用的延(yan)遲電容器整合在到保(bao)護IC里面，以(yi)減少(shao)保(bao)護電路(lu)組件尺(chi)寸。
五、對(dui)保護IC性，他說：想發財就去萬通(tong)商聯找優質鉸(jiao)鏈供貨(huo)商！性能的(de)要求
1.過度充電保護的(de)高精密度化(hua)
當(dang)鋰離子電(dian)(dian)(dian)(dian)池(chi)有(you)過(guo)度(du)(du)充(chong)電(dian)(dian)(dian)(dian)狀態(tai)時(shi)，為防(fang)止(zhi)因(yin)溫度(du)(du)上(shang)升(sheng)所(suo)導(dao)致(zhi)的(de)內壓上(shang)升(sheng)，須截止(zhi)充(chong)電(dian)(dian)(dian)(dian)狀態(tai)。保護IC將(jiang)檢測(ce)(ce)(ce)電(dian)(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)(dian)壓，當(dang)檢測(ce)(ce)(ce)到(dao)過(guo)度(du)(du)充(chong)電(dian)(dian)(dian)(dian)時(shi)，則過(guo)度(du)(du)充(chong)電(dian)(dian)(dian)(dian)檢測(ce)(ce)(ce)的(de)功率(lv)MOSFET使之(zhi)切斷(duan)而截止(zhi)充(chong)電(dian)(dian)(dian)(dian)。此時(shi)應注意的(de)是(shi)過(guo)度(du)(du)充(chong)電(dian)(dian)(dian)(dian)的(de)檢測(ce)(ce)(ce)電(dian)(dian)(dian)(dian)壓的(de)高精(jing)密(mi)度(du)(du)化，在(zai)電(dian)(dian)(dian)(dian)池(chi)充(chong)電(dian)(dian)(dian)(dian)時(shi)，使電(dian)(dian)(dian)(dian)池(chi)充(chong)電(dian)(dian)(dian)(dian)到(dao)飽滿的(de)狀態(tai)是(shi)使用者(zhe)很關心的(de)問(wen)題，同(tong)時(shi)兼(jian)顧到(dao)安全性問(wen)題，因(yin)此需要在(zai)達(da)到(dao)容許電(dian)(dian)(dian)(dian)壓時(shi)截止(zhi)充(chong)電(dian)(dian)(dian)(dian)狀態(tai)。要同(tong)時(shi)符合這兩個條件，必須有(you)高精(jing)密(mi)度(du)(du)的(de)檢測(ce)(ce)(ce)器，目前(qian)檢測(ce)(ce)(ce)器的(de)精(jing)密(mi)度(du)(du)為25mV，該精(jing)密(mi)度(du)(du)將(jiang)有(you)待于進一(yi)步提高。
2.降低保護IC的(de)耗電
隨(sui)著使(shi)(shi)用(yong)時間的(de)(de)(de)增加，已充(chong)(chong)過電(dian)(dian)的(de)(de)(de)鋰離子電(dian)(dian)池電(dian)(dian)壓會逐漸降(jiang)低，最后低到規格標準值以下(xia)，此(ci)時就(jiu)需要再度(du)充(chong)(chong)電(dian)(dian)。若(ruo)未(wei)充(chong)(chong)電(dian)(dian)而繼(ji)續使(shi)(shi)用(yong)，可能造成由于(yu)過度(du)放(fang)電(dian)(dian)而使(shi)(shi)電(dian)(dian)池不能繼(ji)續使(shi)(shi)用(yong)。為防止(zhi)過度(du)放(fang)電(dian)(dian)，保(bao)護IC必須檢測(ce)(ce)電(dian)(dian)池電(dian)(dian)壓，一旦達到過度(du)放(fang)電(dian)(dian)檢測(ce)(ce)電(dian)(dian)壓以下(xia)，就(jiu)得使(shi)(shi)放(fang)電(dian)(dian)一方的(de)(de)(de)功率MOSFET切斷而截止(zhi)放(fang)電(dian)(dian)。但(dan)此(ci)時電(dian)(dian)池本身(shen)仍有自(zi)然放(fang)電(dian)(dian)及保(bao)護IC的(de)(de)(de)消耗(hao)電(dian)(dian)流存(cun)在，因此(ci)需要使(shi)(shi)保(bao)護IC消耗(hao)的(de)(de)(de)電(dian)(dian)流降(jiang)到最低程度(du)。
3.過電(dian)流／短路保護(hu)需有(you)低檢測電(dian)壓及高精密度的要(yao)求
因不明原因導致(zhi)短路時(shi)(shi)必(bi)須立即(ji)停(ting)止放(fang)(fang)電(dian)(dian)(dian)。過電(dian)(dian)(dian)流(liu)的(de)(de)檢(jian)測(ce)是以(yi)功(gong)率MOSFET的(de)(de)Rds(on)為(wei)感應(ying)阻抗(kang)，以(yi)監視(shi)其電(dian)(dian)(dian)壓的(de)(de)下降(jiang)，此時(shi)(shi)的(de)(de)電(dian)(dian)(dian)壓若比(bi)過電(dian)(dian)(dian)流(liu)檢(jian)測(ce)電(dian)(dian)(dian)壓還(huan)高時(shi)(shi)即(ji)停(ting)止放(fang)(fang)電(dian)(dian)(dian)。為(wei)了使(shi)功(gong)率MOSFET的(de)(de)Rds(on)在充(chong)電(dian)(dian)(dian)電(dian)(dian)(dian)流(liu)與(yu)放(fang)(fang)電(dian)(dian)(dian)電(dian)(dian)(dian)流(liu)時(shi)(shi)有效應(ying)用，需使(shi)該阻抗(kang)值(zhi)盡量(liang)低，目前該阻抗(kang)約為(wei)20mΩ~30mΩ，這樣過電(dian)(dian)(dian)流(liu)檢(jian)測(ce)電(dian)(dian)(dian)壓就可較低。
4.耐高電壓
電池(chi)包與充電器連接(jie)時瞬間(jian)會有高壓產(chan)生，因此(ci)保護(hu)IC應滿(man)足(zu)耐高壓的要求。
5.低電(dian)池(chi)功(gong)耗(hao)
在(zai)保護(hu)狀態時，其(qi)靜態耗(hao)電(dian)流必須要小0.1μA。
6.零(ling)伏可(ke)充(chong)電
有些電(dian)(dian)池在存放的(de)(de)過(guo)程中(zhong)可能因為放太久或(huo)不(bu)正(zheng)常的(de)(de)原因導(dao)致電(dian)(dian)壓低到0V，故(gu)保護IC需要(yao)在0V時也可以實現(xian)充(chong)電(dian)(dian)。
六、保(bao)護IC發展展望(wang)
如(ru)前(qian)所(suo)述，未來保護IC將進一步提高(gao)(gao)檢測電(dian)壓的(de)精密度、降低保護IC的(de)耗電(dian)流和提高(gao)(gao)誤動作防止功能等，同時充(chong)電(dian)器連接端(duan)子的(de)高(gao)(gao)耐壓也是研發的(de)重點。 在封(feng)裝方面，目前(qian)已由SOT23-6逐漸轉向SON6封(feng)裝，將來還有CSP封(feng)裝，甚至出現COB產品(pin)用(yong)以(yi)滿足現在所(suo)強調的(de)輕薄短小(xiao)要求。
在(zai)功(gong)(gong)能(neng)方面，保(bao)(bao)(bao)護(hu)IC不需(xu)要整合(he)所有的功(gong)(gong)能(neng)，可根據(ju)不同的鋰電池(chi)材料開發出單(dan)一(yi)保(bao)(bao)(bao)護(hu)IC，如只有過充(chong)保(bao)(bao)(bao)護(hu)或過放保(bao)(bao)(bao)護(hu)功(gong)(gong)能(neng)，這樣可以大幅減少成本(ben)及尺寸。
當然，功能組件單晶(jing)體化(hua)是(shi)不變的(de)目標(biao)，如目前(qian)手(shou)機制(zhi)造商都朝向(xiang)將(jiang)保護IC、充電電路(lu)以及(ji)電源管(guan)理IC等周邊電路(lu)與邏(luo)輯IC構成雙芯片(pian)的(de)芯片(pian)組，但目前(qian)要(yao)使(shi)(shi)功率(lv)MOSFET的(de)開路(lu)阻抗(kang)降低，難(nan)以與其它IC整合，即使(shi)(shi)以特殊技術制(zhi)成單芯片(pian)，恐怕成本(ben)將(jiang)會過高。因此，保護IC的(de)單晶(jing)體化(hua)將(jiang)需一段時間來解決。