一、電(dian)芯操作注(zhu)，他說(shuo)：想發財就去萬通商聯(lian)找優(you)質表(biao)帶供貨商！注(zhu)意事項

    由于電(dian)芯屬于軟包裝，為(wei)保證(zheng)電(dian)芯的性能不受損害，必須小心對電(dian)芯進行操作。

    1.鋁箔包裝材料

    鋁箔包(bao)裝材料易被尖(jian)銳部件(jian)刺損，諸如(ru)鎳(nie)片(pian)、尖(jian)針。

    禁止(zhi)用尖銳部件碰撞電池

    應清潔工作環境，避免有尖(jian)銳部件存在(zai)

    禁止用釘子(zi)及其它(ta)利器刺穿電池(chi)

    禁止將電(dian)池與金(jin)屬物，如項鏈、發(fa)夾(jia)等一起運輸(shu)或(huo)貯(zhu)存(cun)

    2.頂封邊

    頂封邊非常容(rong)易受到損害

    禁止彎折頂封邊

    3.折邊

    折邊在電池生產過(guo)程中(zhong)已完(wan)成(cheng)，并通過(guo)了密封(feng)測試(shi)。

    禁止打開或破壞折邊(bian) 4.極耳

    極耳的機械(xie)強度并非異常堅固，特別是鋁(lv)片。

    禁止彎折(zhe)極耳

    5.機械撞(zhuang)擊

    禁止(zhi)墜落、沖擊、彎折電芯(xin)

    禁止用(yong)錘(chui)子敲擊或踩踏電(dian)池

    禁(jin)止敲擊或(huo)拋擲電池。

    6.短路

    任何時候禁止短路電(dian)芯(xin)，它(ta)會導致電(dian)芯(xin)嚴(yan)重(zhong)損壞

    禁止用金屬物如電(dian)線短(duan)路連(lian)接電(dian)池正負(fu)極

    二、聚合(he)物鋰離子(zi)電(dian)池測試標準環境

    環境溫度： 20±5℃

    相對濕度： 45~85%

    在測試(shi)前電池(chi)都要先放(fang)完(wan)電

    三(san)、聚合物鋰離子電范(fan)充放電注意事(shi)項(xiang)

    1.充電(dian)

    充(chong)(chong)電(dian)電(dian)流(liu)及(ji)充(chong)(chong)電(dian)電(dian)壓不得(de)超過以下標準，如超過規定值可能(neng)會對電(dian)芯的(de)充(chong)(chong)放電(dian)性能(neng)、機械性能(neng)及(ji)安(an)全性造成(cheng)造成(cheng)損(sun)壞，進可能(neng)導致發熱及(ji)泄漏。

    電池充電器必(bi)須能(neng)恒(heng)流(liu)恒(heng)壓充電(dian)；

    充電(dian)時的單體電(dian)池充電(dian)電(dian)流必須在1C5A以下；

    充電(dian)時溫度范圍在(zai)0~+45℃；

    充(chong)電時(shi)電壓(ya)不能超過4.23V。

    2.放電

    放電(dian)電(dian)流(liu)不(bu)得(de)超(chao)過以下標準(zhun)，放電(dian)必須(xu)在(zai)本標準(zhun)范圍內(nei)進行。

    單體電(dian)池放(fang)電(dian)電(dian)流(liu)必須小于2C5A；

    放(fang)電時溫度(du)范(fan)圍在-20~+60℃；

    單體電(dian)池放電(dian)終止電(dian)壓不(bu)小于2.75V。

    3.過放電

    需要注意的是(shi)，在電芯長(chang)期(qi)未使(shi)用(yong)期(qi)間，它可能會用(yong)其(qi)自放電特性而處于(yu)某種過放電狀態(tai)。為防(fang)止過放電的發(fa)生不能過放電使(shi)單(dan)體電池低于(yu)2.5V。

    4.具(ju)體應用(yong)時要求加合格保護電路板。

    四、聚合(he)物鋰(li)離子電池貯存

    電池長期貯存(cun)的環境為：溫度(du)-20~+35℃

    相對濕度 45~75%

    電(dian)池貯存期(qi)近(jin)一年時要用標準充電(dian)方(fang)式(shi)給電(dian)池充電(dian)10%~50%。

五、聚合物鋰(li)離(li)子電池(chi)運輸

    電(dian)池應在10%~50%的(de)充電(dian)狀態(tai)下(xia)運輸(shu)。

    六(liu)、聚合物鋰離(li)子電池其它使用說明

    1.為(wei)了(le)防(fang)止電池可(ke)能發生泄漏、發熱(re)、爆(bao)炸，請注意以下(xia)預防(fang)措施：

    禁止在任(ren)何情況下拆(chai)卸電(dian)芯。

    禁止將電(dian)池(chi)浸入水中(zhong)(zhong)或海水中(zhong)(zhong)，不(bu)能受潮(chao)。

    禁止在(zai)熱(re)(re)源(yuan)旁(pang)，如火、加熱(re)(re)器等，使用或(huo)放置電池。

    禁止(zhi)將電池加熱或丟入(ru)火(huo)中。

    禁止(zhi)直接(jie)焊(han)接(jie)電池。

    禁止(zhi)在火邊或很熱的環境中(zhong)充電。

 &n，他(ta)說：想發財就去萬通(tong)商聯找優(you)質表帶供貨商！nbsp;  禁止將電池(chi)放入微波爐或高壓容器內(nei)。

    禁止在高溫下（如強陽光或很熱(re)的汽車中）使用或放置電池，否則會引(yin)起過(guo)熱(re)、起火(huo)或者功能(neng)衰退(tui)、壽命(ming)減小(xiao)。

    2.聚合物鋰(li)離(li)子(zi)電(dian)池理論(lun)上不存(cun)在流動(dong)的電(dian)解(jie)液(ye)，但萬一有電(dian)解(jie)液(ye)泄漏而接觸(chu)到皮膚、眼睛或身體其它部位，應立即用清水(shui)沖冼電(dian)解(jie)液(ye)并就醫。

    3.禁止使(shi)用已損壞(huai)的電芯（電芯塑料封邊損壞(huai)，外殼(ke)破(po)損，聞到電解液氣體，電解液泄漏等）。

    如有電解液(ye)泄漏(lou)或散發電解液(ye)氣味的(de)電池應遠離(li)火(huo)源(yuan)以避免著火(huo)或爆炸(zha)。

    鋰電池(chi)保護電路綜(zong)述

    鋰離子電池保(bao)(bao)護(hu)(hu)電(dian)(dian)路包括過(guo)(guo)(guo)度充(chong)電(dian)(dian)保(bao)(bao)護(hu)(hu)、過(guo)(guo)(guo)電(dian)(dian)流／短(duan)路保(bao)(bao)護(hu)(hu)和過(guo)(guo)(guo)放(fang)電(dian)(dian)保(bao)(bao)護(hu)(hu)，要(yao)(yao)求過(guo)(guo)(guo)充(chong)電(dian)(dian)保(bao)(bao)護(hu)(hu)高(gao)精密度、保(bao)(bao)護(hu)(hu)IC功耗低(di)、高(gao)耐壓(ya)以(yi)及零伏可充(chong)電(dian)(dian)等特(te)性(xing)(xing)。本(ben)文(wen)詳(xiang)細(xi)介紹了(le)這三(san)種保(bao)(bao)護(hu)(hu)電(dian)(dian)路的原理、新(xin)功能和特(te)性(xing)(xing)要(yao)(yao)求。

    近年來，PDA、數字相機、手機、可攜式音訊設(she)備(bei)和藍芽設(she)備(bei)等越來越多的產品采用鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)作為主(zhu)要(yao)電(dian)(dian)(dian)(dian)(dian)源。鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)具有體積(ji)小、能量(liang)密度(du)(du)高(gao)、無記憶效應、循(xun)環壽命高(gao)、高(gao)電(dian)(dian)(dian)(dian)(dian)壓電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)和自放電(dian)(dian)(dian)(dian)(dian)率低(di)等優點，與鎳鎘、鎳氫電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)不太一樣，鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)必須(xu)考慮(lv)充電(dian)(dian)(dian)(dian)(dian)、放電(dian)(dian)(dian)(dian)(dian)時的安全性(xing)(xing)，以防止特性(xing)(xing)劣化。針對鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的過(guo)充、過(guo)度(du)(du)放電(dian)(dian)(dian)(dian)(dian)、過(guo)電(dian)(dian)(dian)(dian)(dian)流及短路保護很(hen)重要(yao)，所(suo)以通常(chang)都會在(zai)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)包內設(she)計保護線(xian)路用以保護鋰(li)(li)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)。

    由于鋰離子電(dian)(dian)(dian)池能量密度高(gao)，因此難以確保電(dian)(dian)(dian)池的(de)安全性。在過度充(chong)電(dian)(dian)(dian)狀態下，電(dian)(dian)(dian)池溫度上(shang)升后(hou)能量將過剩，于是電(dian)(dian)(dian)解(jie)液分(fen)解(jie)而(er)(er)產生氣體，因內壓上(shang)升而(er)(er)產生自燃或(huo)破裂的(de)危險；反之，在過度放電(dian)(dian)(dian)狀態下，電(dian)(dian)(dian)解(jie)液因分(fen)解(jie)導致電(dian)(dian)(dian)池特性及耐久性劣化(hua)，因而(er)(er)降低(di)可(ke)充(chong)電(dian)(dian)(dian)次數(shu)。

    鋰離子(zi)電(dian)(dian)(dian)池(chi)(chi)的保(bao)護(hu)電(dian)(dian)(dian)路(lu)就是(shi)(shi)要確保(bao)這(zhe)樣(yang)的過(guo)(guo)度充(chong)電(dian)(dian)(dian)及(ji)放電(dian)(dian)(dian)狀態(tai)時的安全(quan)性，并防止特性劣(lie)化。鋰離子(zi)電(dian)(dian)(dian)池(chi)(chi)的保(bao)護(hu)電(dian)(dian)(dian)路(lu)是(shi)(shi)由(you)保(bao)護(hu)IC及(ji)兩顆(ke)功(gong)(gong)率MOSFET所構(gou)成，其中(zhong)保(bao)護(hu)IC監視電(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)壓，當(dang)有(you)過(guo)(guo)度充(chong)電(dian)(dian)(dian)及(ji)放電(dian)(dian)(dian)狀態(tai)時切換到以外掛的功(gong)(gong)率MOSFET來保(bao)護(hu)電(dian)(dian)(dian)池(chi)(chi)，保(bao)護(hu)IC的功(gong)(gong)能有(you)過(guo)(guo)度充(chong)電(dian)(dian)(dian)保(bao)護(hu)、過(guo)(guo)度放電(dian)(dian)(dian)保(bao)護(hu)和過(guo)(guo)電(dian)(dian)(dian)流／短路(lu)保(bao)護(hu)。

    一、過度充電(dian)保護

    過度充(chong)(chong)(chong)電保護IC的原理(li)為：當(dang)外部充(chong)(chong)(chong)電器對鋰電池(chi)充(chong)(chong)(chong)電時，為防止(zhi)(zhi)因溫度上(shang)升(sheng)所導(dao)致的內壓(ya)上(shang)升(sheng)，需(xu)終止(zhi)(zhi)充(chong)(chong)(chong)電狀態。此時，保護IC需(xu)檢測電池(chi)電壓(ya)，當(dang)到(dao)達4.25V時（假設電池(chi)過充(chong)(chong)(chong)點為4.25V）即激活(huo)過度充(chong)(chong)(chong)電保護，將功率MOSFET由開轉為切斷，進而截(jie)止(zhi)(zhi)充(chong)(chong)(chong)電。

    另外，還必須注(zhu)意因(yin)噪(zao)音所產生的(de)(de)過(guo)度(du)充電檢(jian)出誤動(dong)作(zuo)，以(yi)免判(pan)定(ding)為過(guo)充保護。因(yin)此，需(xu)要(yao)設定(ding)延(yan)(yan)遲(chi)時(shi)間，并且延(yan)(yan)遲(chi)時(shi)間不能(neng)短(duan)于噪(zao)音的(de)(de)持(chi)續時(shi)間。

    二、過度(du)放電保護

    在過度放電的情況下，電解液因分解而(er)導致電池(chi)特性劣化，并造(zao)成充電次(ci)數的降低。采用鋰電池(chi)保護(hu)(hu)IC可以避免過度放電現(xian)象產生，實現(xian)電池(chi)保護(hu)(hu)功(gong)能。

    過度(du)放(fang)(fang)電(dian)(dian)(dian)保(bao)(bao)護IC原理：為(wei)了防止鋰(li)電(dian)(dian)(dian)池(chi)的(de)過度(du)放(fang)(fang)電(dian)(dian)(dian)狀態(tai)，假設鋰(li)電(dian)(dian)(dian)池(chi)接上負載，當鋰(li)電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓低(di)于其(qi)過度(du)放(fang)(fang)電(dian)(dian)(dian)電(dian)(dian)(dian)壓檢(jian)測點(dian)（假定為(wei)2.3V）時(shi)將(jiang)激(ji)活過度(du)放(fang)(fang)電(dian)(dian)(dian)保(bao)(bao)護，使(shi)功(gong)率MOSFET由開(kai)轉變為(wei)切斷而截止放(fang)(fang)電(dian)(dian)(dian)，以避免電(dian)(dian)(dian)池(chi)過度(du)放(fang)(fang)電(dian)(dian)(dian)現象產生，并將(jiang)電(dian)(dian)(dian)池(chi)保(bao)(bao)持(chi)在低(di)靜態(tai)電(dian)(dian)(dian)流的(de)待機(ji)模式，此(ci)時(shi)的(de)電(dian)(dian)(dian)流僅0.1μA。

    當鋰電(dian)(dian)(dian)池接上充電(dian)(dian)(dian)器，且此(ci)時鋰電(dian)(dian)(dian)池電(dian)(dian)(dian)壓高于過度(du)放(fang)電(dian)(dian)(dian)電(dian)(dian)(dian)壓時，過度(du)放(fang)電(dian)(dian)(dian)保護功能方可(ke)解除。另(ling)外，考(kao)慮到脈沖放(fang)電(dian)(dian)(dian)的情況(kuang)，過放(fang)電(dian)(dian)(dian)檢測電(dian)(dian)(dian)路設(she)有延遲時間以避免產生誤動作。

    三、過電流及短路電流

    因為不明原因（放(fang)電(dian)時或(huo)正負極(ji)遭金屬物誤觸）造成過(guo)電(dian)流或(huo)短路，為確(que)保安(an)全，必須使其立(li)即(ji)停止放(fang)電(dian)。

    過(guo)電(dian)(dian)流(liu)保(bao)護IC原理為，當放電(dian)(dian)電(dian)(dian)流(liu)過(guo)大或(huo)短路情況產(chan)生時，保(bao)護IC將激活過(guo)（短路）電(dian)(dian)流(liu)保(bao)護，此時過(guo)電(dian)(dian)流(liu)的(de)檢測(ce)是將功率(lv)MOSFET的(de)Rds(on) 當成感應阻(zu)抗用以(yi)監測(ce)其電(dian)(dian)壓的(de)下降情形，如果比所(suo)定的(de)過(guo)電(dian)(dian)流(liu)檢測(ce)電(dian)(dian)壓還高則停止放電(dian)(dian)，運算公(gong)式為:

    V- = I × Rds(on) × 2（V- 為過電(dian)流(liu)檢測(ce)電(dian)壓(ya)，I 為放電(dian)電(dian)流(liu)）

    假設 V- = 0.2V，Rds(on) = 25mΩ，則保護電流的(de)大小為 I = 4A

    同(tong)樣(yang)地(di)，過電流(liu)(liu)檢測也必須設(she)有(you)延遲時間以防(fang)有(you)突發(fa)電流(liu)(liu)流(liu)(liu)入時產生誤動作。

    通常(chang)在(zai)過(guo)電(dian)流(liu)(liu)產生后，若能(neng)去(qu)除過(guo)電(dian)流(liu)(liu)因素(su)（例如馬上與負載(zai)脫(tuo)離），將(jiang)會(hui)恢復其正常(chang)狀態(tai)，可以再進行正常(chang)的(de)充(chong)放電(dian)動作。

    四(si)、鋰(li)電(dian)池(chi)保(bao)護IC的(de)新功(gong)能

    除了上述的鋰電池保護IC功能之外，下面這些新的功能同樣值得關注：

    1.充電時的(de)過(guo)電流保護

    當連(lian)接充(chong)電(dian)器進行(xing)充(chong)電(dian)時突然產生過(guo)電(dian)流(liu)（如(ru)充(chong)電(dian)器損壞(huai)），電(dian)路立(li)即進行(xing)過(guo)電(dian)流(liu)檢(jian)測(ce)，此時Cout將(jiang)由(you)高轉為(wei)低，功率MOSFET由(you)開轉為(wei)切(qie)斷，實(shi)現保護功能。

    V- = I × Rds(on) × 2

    （I 是充電(dian)電(dian)流(liu)；Vdet4，過電(dian)流(liu)檢測電(dian)壓，Vdet4 為 -0.1V）

    2.過度充電時的鎖定模式

    通常保(bao)(bao)護(hu)IC在過(guo)度(du)充(chong)(chong)電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)時將(jiang)(jiang)(jiang)(jiang)(jiang)經(jing)過(guo)一(yi)段延遲時間(jian)，然后就會(hui)將(jiang)(jiang)(jiang)(jiang)(jiang)功率MOSFET切斷以達(da)到(dao)保(bao)(bao)護(hu)的(de)(de)目的(de)(de)，當鋰(li)電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓(ya)一(yi)直(zhi)下(xia)降(jiang)到(dao)解(jie)除點（過(guo)度(du)充(chong)(chong)電(dian)(dian)(dian)(dian)滯后電(dian)(dian)(dian)(dian)壓(ya)）時就會(hui)恢復，此(ci)時又會(hui)繼續(xu)充(chong)(chong)電(dian)(dian)(dian)(dian)→保(bao)(bao)護(hu)→放(fang)電(dian)(dian)(dian)(dian)→充(chong)(chong)電(dian)(dian)(dian)(dian)→放(fang)電(dian)(dian)(dian)(dian)。這種狀態的(de)(de)安全性(xing)問題(ti)將(jiang)(jiang)(jiang)(jiang)(jiang)無(wu)法獲得有(you)效(xiao)解(jie)決，鋰(li)電(dian)(dian)(dian)(dian)池將(jiang)(jiang)(jiang)(jiang)(jiang)一(yi)直(zhi)重(zhong)復著(zhu)充(chong)(chong)電(dian)(dian)(dian)(dian)→放(fang)電(dian)(dian)(dian)(dian)→充(chong)(chong)電(dian)(dian)(dian)(dian)→放(fang)電(dian)(dian)(dian)(dian)的(de)(de)動作，功率MOSFET的(de)(de)柵極將(jiang)(jiang)(jiang)(jiang)(jiang)反復地處于高低電(dian)(dian)(dian)(dian)壓(ya)交替狀態，這樣可能會(hui)使MOSFET變(bian)熱(re)，還會(hui)降(jiang)低電(dian)(dian)(dian)(dian)池壽命，因此(ci)鎖定模式很(hen)重(zhong)要。假如鋰(li)電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)電(dian)(dian)(dian)(dian)路(lu)在檢(jian)測到(dao)過(guo)度(du)充(chong)(chong)電(dian)(dian)(dian)(dian)保(bao)(bao)護(hu)時有(you)鎖定模式，MOSFET將(jiang)(jiang)(jiang)(jiang)(jiang)不(bu)會(hui)變(bian)熱(re)，且安全性(xing)相對提高很(hen)多(duo)。

    在(zai)(zai)過(guo)(guo)度充(chong)電(dian)(dian)(dian)保護之后，只(zhi)要充(chong)電(dian)(dian)(dian)器連接在(zai)(zai)電(dian)(dian)(dian)池包上，此(ci)時(shi)將進入過(guo)(guo)充(chong)鎖定模(mo)式。此(ci)時(shi)，即使鋰(li)電(dian)(dian)(dian)池電(dian)(dian)(dian)壓下降也不(bu)會(hui)產(chan)生再充(chong)電(dian)(dian)(dian)的(de)情形，將充(chong)電(dian)(dian)(dian)器移除(chu)并連接負載(zai)即可(ke)恢(hui)復充(chong)放電(dian)(dian)(dian)的(de)狀態。

    3.減少保護(hu)電路組件尺寸

    將過度(du)充(chong)電(dian)和(he)短路(lu)保護用的(de)延(yan)遲電(dian)容(rong)器整合(he)在到保護IC里面，以減少保護電(dian)路(lu)組件尺寸(cun)。

五(wu)、對(dui)保護IC性，他說：想發財就去(qu)萬通商聯找優質(zhi)鉸鏈(lian)供貨商！性能的要求

    1.過度充電保(bao)護(hu)的高(gao)精密度化

    當(dang)鋰(li)離子(zi)電(dian)(dian)(dian)池(chi)有(you)(you)過度(du)充(chong)(chong)(chong)(chong)(chong)(chong)電(dian)(dian)(dian)狀(zhuang)(zhuang)(zhuang)態(tai)時，為防止(zhi)因(yin)溫度(du)上升所導致的(de)內壓(ya)上升，須(xu)截(jie)止(zhi)充(chong)(chong)(chong)(chong)(chong)(chong)電(dian)(dian)(dian)狀(zhuang)(zhuang)(zhuang)態(tai)。保護IC將檢(jian)(jian)(jian)測(ce)電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)，當(dang)檢(jian)(jian)(jian)測(ce)到(dao)過度(du)充(chong)(chong)(chong)(chong)(chong)(chong)電(dian)(dian)(dian)時，則過度(du)充(chong)(chong)(chong)(chong)(chong)(chong)電(dian)(dian)(dian)檢(jian)(jian)(jian)測(ce)的(de)功率(lv)MOSFET使(shi)之切(qie)斷而截(jie)止(zhi)充(chong)(chong)(chong)(chong)(chong)(chong)電(dian)(dian)(dian)。此(ci)時應注意的(de)是過度(du)充(chong)(chong)(chong)(chong)(chong)(chong)電(dian)(dian)(dian)的(de)檢(jian)(jian)(jian)測(ce)電(dian)(dian)(dian)壓(ya)的(de)高精(jing)密度(du)化，在電(dian)(dian)(dian)池(chi)充(chong)(chong)(chong)(chong)(chong)(chong)電(dian)(dian)(dian)時，使(shi)電(dian)(dian)(dian)池(chi)充(chong)(chong)(chong)(chong)(chong)(chong)電(dian)(dian)(dian)到(dao)飽滿的(de)狀(zhuang)(zhuang)(zhuang)態(tai)是使(shi)用者很關(guan)心的(de)問題，同時兼顧到(dao)安全性問題，因(yin)此(ci)需要在達到(dao)容(rong)許電(dian)(dian)(dian)壓(ya)時截(jie)止(zhi)充(chong)(chong)(chong)(chong)(chong)(chong)電(dian)(dian)(dian)狀(zhuang)(zhuang)(zhuang)態(tai)。要同時符合這兩個條件，必須(xu)有(you)(you)高精(jing)密度(du)的(de)檢(jian)(jian)(jian)測(ce)器，目前檢(jian)(jian)(jian)測(ce)器的(de)精(jing)密度(du)為25mV，該(gai)精(jing)密度(du)將有(you)(you)待(dai)于進一步提高。

    2.降低保護IC的耗電(dian)

    隨著使(shi)用時(shi)(shi)間(jian)的(de)(de)(de)增加(jia)，已充(chong)過電(dian)(dian)(dian)(dian)(dian)(dian)的(de)(de)(de)鋰離子電(dian)(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)(dian)壓會逐漸降(jiang)低(di)，最后低(di)到(dao)規格標(biao)準值以下(xia)，此時(shi)(shi)就需(xu)要(yao)再(zai)度(du)(du)充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)。若未充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)而繼續使(shi)用，可能(neng)(neng)造成(cheng)由于過度(du)(du)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)而使(shi)電(dian)(dian)(dian)(dian)(dian)(dian)池不(bu)能(neng)(neng)繼續使(shi)用。為防止過度(du)(du)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)，保護(hu)IC必須檢(jian)測(ce)電(dian)(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)(dian)壓，一(yi)(yi)旦達到(dao)過度(du)(du)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)檢(jian)測(ce)電(dian)(dian)(dian)(dian)(dian)(dian)壓以下(xia)，就得使(shi)放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)一(yi)(yi)方的(de)(de)(de)功率MOSFET切斷(duan)而截止放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)。但此時(shi)(shi)電(dian)(dian)(dian)(dian)(dian)(dian)池本(ben)身仍有自然放(fang)電(dian)(dian)(dian)(dian)(dian)(dian)及保護(hu)IC的(de)(de)(de)消耗電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)存在，因(yin)此需(xu)要(yao)使(shi)保護(hu)IC消耗的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)降(jiang)到(dao)最低(di)程度(du)(du)。

    3.過電流／短路保護需有低檢測電壓及高精(jing)密度的要求

    因(yin)不(bu)明原因(yin)導致短路時必須(xu)立即停止(zhi)放電(dian)。過(guo)電(dian)流(liu)的(de)檢(jian)測(ce)是以(yi)功率MOSFET的(de)Rds(on)為感應阻(zu)抗，以(yi)監視(shi)其電(dian)壓(ya)的(de)下降，此時的(de)電(dian)壓(ya)若比過(guo)電(dian)流(liu)檢(jian)測(ce)電(dian)壓(ya)還高時即停止(zhi)放電(dian)。為了使(shi)功率MOSFET的(de)Rds(on)在(zai)充(chong)電(dian)電(dian)流(liu)與放電(dian)電(dian)流(liu)時有效應用，需使(shi)該阻(zu)抗值盡(jin)量低，目前該阻(zu)抗約為20mΩ~30mΩ，這樣過(guo)電(dian)流(liu)檢(jian)測(ce)電(dian)壓(ya)就可較(jiao)低。

    4.耐高電(dian)壓

    電池包與充電器連(lian)接時瞬間會有高壓產生，因此(ci)保護IC應滿足耐(nai)高壓的要求。

    5.低電(dian)池功耗

    在保護狀態(tai)時，其靜態(tai)耗電流必須要小0.1μA。

    6.零伏(fu)可充(chong)電

    有些電(dian)池在(zai)存(cun)放(fang)的過程(cheng)中可(ke)(ke)能因(yin)為放(fang)太久或(huo)不正常的原因(yin)導致電(dian)壓低到(dao)0V，故保護IC需要在(zai)0V時(shi)也可(ke)(ke)以實現充電(dian)。

    六、保護IC發展展望(wang)

    如前(qian)所(suo)述，未來(lai)保(bao)護IC將進(jin)一步提(ti)高檢(jian)測電壓的精密度(du)、降低保(bao)護IC的耗電流和提(ti)高誤動作防止功(gong)能等，同時充電器(qi)連接端子的高耐壓也是研發的重點。 在(zai)封(feng)裝方面，目(mu)前(qian)已由SOT23-6逐(zhu)漸轉向SON6封(feng)裝，將來(lai)還(huan)有CSP封(feng)裝，甚(shen)至(zhi)出(chu)現COB產品用(yong)以(yi)滿(man)足現在(zai)所(suo)強調的輕薄短小要求。

    在功能方面，保護IC不需要整合所有(you)(you)的功能，可(ke)根(gen)據不同的鋰電池(chi)材料(liao)開發(fa)出(chu)單一保護IC，如只有(you)(you)過充保護或(huo)過放保護功能，這樣(yang)可(ke)以大(da)幅減少成(cheng)本及尺寸。

    當然(ran)，功能組(zu)件單(dan)(dan)晶(jing)體化(hua)是不變(bian)的目標(biao)，如目前(qian)手(shou)機制造(zao)商都朝(chao)向(xiang)將(jiang)保(bao)護IC、充電(dian)電(dian)路(lu)以(yi)(yi)及(ji)電(dian)源管理IC等周邊電(dian)路(lu)與(yu)邏輯IC構成(cheng)雙芯(xin)(xin)片(pian)的芯(xin)(xin)片(pian)組(zu)，但(dan)目前(qian)要使功率MOSFET的開路(lu)阻抗降低(di)，難(nan)以(yi)(yi)與(yu)其它IC整合，即使以(yi)(yi)特殊技術制成(cheng)單(dan)(dan)芯(xin)(xin)片(pian)，恐怕成(cheng)本將(jiang)會過高。因(yin)此，保(bao)護IC的單(dan)(dan)晶(jing)體化(hua)將(jiang)需一(yi)段時間來解(jie)決。