聚合物鋰離子電池使用注意事項
一、電芯操作(zuo)注，他(ta)說：想發(fa)財就去萬通商聯找(zhao)優質表(biao)帶供貨商！注意事項
由于電(dian)芯屬(shu)于軟包(bao)裝，為保證(zheng)電(dian)芯的性(xing)能不受損害，必須(xu)小心對電(dian)芯進行操(cao)作(zuo)。
1.鋁箔(bo)包裝(zhuang)材料
鋁(lv)箔包裝材料易被尖銳部(bu)件刺損，諸(zhu)如鎳片、尖針。
禁止用尖銳(rui)部(bu)件碰撞電池
應清潔工作環(huan)境，避(bi)免有尖銳部件存(cun)在
禁止用(yong)釘子及(ji)其它利器(qi)刺穿電池
禁止將電池與金屬物，如(ru)項鏈、發夾等一起運輸或貯存
2.頂封邊
頂封邊非(fei)常容易受到損害(hai)
禁止彎折頂(ding)封邊(bian)
3.折(zhe)邊
折(zhe)邊在(zai)電(dian)池生(sheng)產過(guo)程中已完(wan)成，并通過(guo)了密封測試。
禁止打開或(huo)破壞(huai)折邊 4.極耳
極耳的機械強度并(bing)非異常堅固，特(te)別(bie)是鋁片(pian)。
禁止彎折極耳
5.機(ji)械撞擊
禁止墜落(luo)、沖擊、彎折(zhe)電芯
禁止用錘子敲(qiao)擊或踩踏電(dian)池
禁止敲擊或(huo)拋(pao)擲電池。
6.短路
任何時候禁止短路電(dian)芯(xin)，它會導致(zhi)電(dian)芯(xin)嚴重損壞
禁止用(yong)金屬(shu)物如電線短路連接(jie)電池(chi)正(zheng)負(fu)極
二、聚合物鋰(li)離子電(dian)池測(ce)試標準環境(jing)
環境溫(wen)度： 20±5℃
相對濕度： 45~85%
在測(ce)試前電池都要先(xian)放完(wan)電
三、聚(ju)合物鋰離子(zi)電(dian)范充放電(dian)注意(yi)事項
1.充(chong)電
充電(dian)電(dian)流及充電(dian)電(dian)壓不得(de)超(chao)過以下標準(zhun)，如超(chao)過規定值可(ke)能會對電(dian)芯的充放電(dian)性(xing)(xing)能、機(ji)械性(xing)(xing)能及安全性(xing)(xing)造(zao)成造(zao)成損壞，進(jin)可(ke)能導致發熱及泄漏(lou)。
電池充電器必須能恒(heng)流恒(heng)壓充電；
充(chong)電時的(de)單體電池充(chong)電電流必須在1C5A以下；
充電時溫度范圍在0~+45℃；
充電時電壓不能超過4.23V。
2.放電
放(fang)電電流(liu)不得超過以(yi)下標準，放(fang)電必須在本標準范圍內進(jin)行。
單(dan)體電池(chi)放電電流(liu)必須(xu)小于2C5A；
放電時溫度范圍(wei)在-20~+60℃；
單體電池放電終止電壓不小于2.75V。
3.過放電
需要注意的是，在電(dian)(dian)(dian)芯(xin)長期未(wei)使用(yong)期間，它(ta)可能(neng)會用(yong)其(qi)自放(fang)(fang)(fang)電(dian)(dian)(dian)特性(xing)而處于某種(zhong)過放(fang)(fang)(fang)電(dian)(dian)(dian)狀態。為防止過放(fang)(fang)(fang)電(dian)(dian)(dian)的發(fa)生不(bu)能(neng)過放(fang)(fang)(fang)電(dian)(dian)(dian)使單(dan)體(ti)電(dian)(dian)(dian)池低于2.5V。
4.具體應用時要求(qiu)加合格(ge)保護電路板。
四、聚合(he)物鋰離(li)子電池(chi)貯存
電(dian)池長(chang)期貯存的環境為：溫(wen)度(du)-20~+35℃
相對(dui)濕(shi)度 45~75%
電池(chi)貯(zhu)存(cun)期近一(yi)年時(shi)要(yao)用標(biao)準充電方式給電池(chi)充電10%~50%。
五、聚(ju)合(he)物鋰(li)離子電池運輸
電池應在10%~50%的充(chong)電狀(zhuang)態下(xia)運輸。
六、聚(ju)合物(wu)鋰離子電池其它使用(yong)說(shuo)明
1.為了防止電池(chi)可能(neng)發生泄漏、發熱(re)、爆炸，請注意以下(xia)預防措施：
禁止在任(ren)何情況下拆卸電芯。
禁止(zhi)將電池(chi)浸入(ru)水(shui)中或海水(shui)中，不能(neng)受潮。
禁(jin)止(zhi)在(zai)熱源旁，如火、加熱器等，使用或放置電池(chi)。
禁止(zhi)將(jiang)電池加熱或丟入(ru)火中。
禁止(zhi)直接焊接電池。
禁止在火(huo)邊或很熱(re)的(de)環(huan)境中充電(dian)。
&n，他說(shuo)：想發財就(jiu)去萬(wan)通(tong)商(shang)聯找優質表帶供貨商(shang)！nbsp; 禁止將(jiang)電池放入(ru)微(wei)波爐或高(gao)壓容器內。
禁(jin)止在高溫下（如強陽光或很熱的汽(qi)車中）使用或放(fang)置電池，否則會引起(qi)過熱、起(qi)火(huo)或者功能衰退、壽命減小。
2.聚合物(wu)鋰離子(zi)電池理論(lun)上不存在流動的電解(jie)液(ye)，但萬一有電解(jie)液(ye)泄漏而接觸到皮膚、眼睛或(huo)身體其它(ta)部(bu)位，應立即(ji)用清(qing)水沖冼電解(jie)液(ye)并就醫。
3.禁止使用已損(sun)(sun)壞的(de)電(dian)芯（電(dian)芯塑料封邊損(sun)(sun)壞，外殼破(po)損(sun)(sun)，聞到電(dian)解液氣體，電(dian)解液泄漏等）。
如(ru)有電解液泄漏或(huo)散發電解液氣味(wei)的(de)電池應(ying)遠離火源以避免著(zhu)火或(huo)爆(bao)炸(zha)。
鋰電池保護電路綜述
鋰離子電池保(bao)護(hu)電(dian)路包括過(guo)(guo)度充電(dian)保(bao)護(hu)、過(guo)(guo)電(dian)流／短(duan)路保(bao)護(hu)和過(guo)(guo)放電(dian)保(bao)護(hu)，要(yao)求過(guo)(guo)充電(dian)保(bao)護(hu)高(gao)精密度、保(bao)護(hu)IC功耗低(di)、高(gao)耐壓以及零伏可充電(dian)等特(te)性。本(ben)文詳細介(jie)紹了(le)這三種保(bao)護(hu)電(dian)路的原理、新功能和特(te)性要(yao)求。
近(jin)年來(lai)，PDA、數字相機、手機、可攜式音訊(xun)設備和藍芽設備等越(yue)來(lai)越(yue)多的(de)(de)產品(pin)采(cai)用(yong)鋰(li)電(dian)(dian)(dian)(dian)池作(zuo)為主要電(dian)(dian)(dian)(dian)源。鋰(li)電(dian)(dian)(dian)(dian)池具(ju)有(you)體積小、能量密(mi)度高、無記(ji)憶效應、循環壽命高、高電(dian)(dian)(dian)(dian)壓電(dian)(dian)(dian)(dian)池和自(zi)放電(dian)(dian)(dian)(dian)率低等優點，與鎳鎘、鎳氫電(dian)(dian)(dian)(dian)池不(bu)太一樣，鋰(li)電(dian)(dian)(dian)(dian)池必須(xu)考(kao)慮(lv)充電(dian)(dian)(dian)(dian)、放電(dian)(dian)(dian)(dian)時的(de)(de)安全性，以防止特性劣化。針(zhen)對鋰(li)電(dian)(dian)(dian)(dian)池的(de)(de)過充、過度放電(dian)(dian)(dian)(dian)、過電(dian)(dian)(dian)(dian)流及短路保(bao)護(hu)很重要，所(suo)以通常都會在電(dian)(dian)(dian)(dian)池包內設計(ji)保(bao)護(hu)線路用(yong)以保(bao)護(hu)鋰(li)電(dian)(dian)(dian)(dian)池。
由于鋰離子電池能(neng)量(liang)密度(du)(du)(du)(du)高，因(yin)(yin)(yin)此難以確保(bao)電池的安全(quan)性。在(zai)過度(du)(du)(du)(du)充電狀態(tai)下(xia)，電池溫度(du)(du)(du)(du)上(shang)升后能(neng)量(liang)將過剩，于是電解液分(fen)解而(er)產生(sheng)氣(qi)體(ti)，因(yin)(yin)(yin)內壓上(shang)升而(er)產生(sheng)自燃(ran)或破裂的危險；反(fan)之(zhi)，在(zai)過度(du)(du)(du)(du)放電狀態(tai)下(xia)，電解液因(yin)(yin)(yin)分(fen)解導致電池特性及耐(nai)久性劣化，因(yin)(yin)(yin)而(er)降(jiang)低(di)可充電次數(shu)。
鋰離子(zi)電(dian)(dian)池(chi)(chi)的(de)(de)保(bao)(bao)護(hu)(hu)(hu)電(dian)(dian)路(lu)就是要(yao)確保(bao)(bao)這樣的(de)(de)過(guo)度(du)充(chong)(chong)電(dian)(dian)及放(fang)(fang)電(dian)(dian)狀態時的(de)(de)安全(quan)性，并防止特性劣化。鋰離子(zi)電(dian)(dian)池(chi)(chi)的(de)(de)保(bao)(bao)護(hu)(hu)(hu)電(dian)(dian)路(lu)是由保(bao)(bao)護(hu)(hu)(hu)IC及兩(liang)顆功率MOSFET所構成，其中保(bao)(bao)護(hu)(hu)(hu)IC監(jian)視電(dian)(dian)池(chi)(chi)電(dian)(dian)壓(ya)，當有過(guo)度(du)充(chong)(chong)電(dian)(dian)及放(fang)(fang)電(dian)(dian)狀態時切(qie)換到(dao)以外掛的(de)(de)功率MOSFET來保(bao)(bao)護(hu)(hu)(hu)電(dian)(dian)池(chi)(chi)，保(bao)(bao)護(hu)(hu)(hu)IC的(de)(de)功能有過(guo)度(du)充(chong)(chong)電(dian)(dian)保(bao)(bao)護(hu)(hu)(hu)、過(guo)度(du)放(fang)(fang)電(dian)(dian)保(bao)(bao)護(hu)(hu)(hu)和過(guo)電(dian)(dian)流／短路(lu)保(bao)(bao)護(hu)(hu)(hu)。
一、過(guo)度充電保護
過(guo)度充電(dian)(dian)(dian)保護IC的原(yuan)理為(wei)：當外部(bu)充電(dian)(dian)(dian)器對鋰(li)電(dian)(dian)(dian)池(chi)(chi)充電(dian)(dian)(dian)時，為(wei)防止因溫度上升(sheng)所導致的內壓(ya)上升(sheng)，需終(zhong)止充電(dian)(dian)(dian)狀(zhuang)態。此(ci)時，保護IC需檢測電(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)壓(ya)，當到達(da)4.25V時（假設電(dian)(dian)(dian)池(chi)(chi)過(guo)充點為(wei)4.25V）即激活(huo)過(guo)度充電(dian)(dian)(dian)保護，將功率MOSFET由開轉(zhuan)為(wei)切斷(duan)，進(jin)而截止充電(dian)(dian)(dian)。
另外，還必須注意因(yin)噪音所產生的(de)過度充(chong)電(dian)檢出誤動作(zuo)，以免判定(ding)為過充(chong)保護。因(yin)此(ci)，需要設定(ding)延遲時(shi)間(jian)(jian)，并且延遲時(shi)間(jian)(jian)不能短于噪音的(de)持續(xu)時(shi)間(jian)(jian)。
二、過度(du)放(fang)電(dian)保護(hu)
在過度(du)放電(dian)的情況下，電(dian)解(jie)液因分解(jie)而導致電(dian)池(chi)特性劣化，并造成(cheng)充電(dian)次數(shu)的降低。采用鋰電(dian)池(chi)保(bao)護IC可(ke)以避免過度(du)放電(dian)現象(xiang)產生，實現電(dian)池(chi)保(bao)護功能。
過度(du)放(fang)電(dian)保(bao)護(hu)IC原理：為了(le)防止鋰(li)電(dian)池(chi)的過度(du)放(fang)電(dian)狀態(tai)，假設鋰(li)電(dian)池(chi)接(jie)上(shang)負載，當鋰(li)電(dian)池(chi)電(dian)壓低于其過度(du)放(fang)電(dian)電(dian)壓檢測點（假定(ding)為2.3V）時(shi)將激活過度(du)放(fang)電(dian)保(bao)護(hu)，使功(gong)率MOSFET由開轉變為切(qie)斷而截止放(fang)電(dian)，以(yi)避免電(dian)池(chi)過度(du)放(fang)電(dian)現(xian)象產(chan)生(sheng)，并將電(dian)池(chi)保(bao)持在低靜態(tai)電(dian)流的待機模式，此時(shi)的電(dian)流僅0.1μA。
當鋰(li)電(dian)(dian)池接上充電(dian)(dian)器(qi)，且此(ci)時鋰(li)電(dian)(dian)池電(dian)(dian)壓(ya)高于過度放(fang)電(dian)(dian)電(dian)(dian)壓(ya)時，過度放(fang)電(dian)(dian)保護功能方(fang)可(ke)解除。另(ling)外，考慮到脈沖(chong)放(fang)電(dian)(dian)的情(qing)況，過放(fang)電(dian)(dian)檢測電(dian)(dian)路設有延遲時間以避免產生(sheng)誤動作。
三(san)、過電流及短路(lu)電流
因為不明原(yuan)因（放(fang)電時或正負極遭金屬(shu)物誤觸）造成過電流或短(duan)路，為確保安全，必須使其立即(ji)停止放(fang)電。
過電(dian)(dian)(dian)流(liu)保(bao)護(hu)(hu)IC原理為(wei)，當放(fang)電(dian)(dian)(dian)電(dian)(dian)(dian)流(liu)過大或短(duan)(duan)路情況(kuang)產生時(shi)(shi)，保(bao)護(hu)(hu)IC將(jiang)激活過（短(duan)(duan)路）電(dian)(dian)(dian)流(liu)保(bao)護(hu)(hu)，此時(shi)(shi)過電(dian)(dian)(dian)流(liu)的(de)檢(jian)測是將(jiang)功率(lv)MOSFET的(de)Rds(on) 當成感(gan)應阻(zu)抗用以監測其電(dian)(dian)(dian)壓的(de)下降(jiang)情形，如果(guo)比所定的(de)過電(dian)(dian)(dian)流(liu)檢(jian)測電(dian)(dian)(dian)壓還高則停止放(fang)電(dian)(dian)(dian)，運算公式為(wei):
V- = I × Rds(on) × 2（V- 為過電(dian)(dian)流檢測電(dian)(dian)壓，I 為放電(dian)(dian)電(dian)(dian)流）
假(jia)設 V- = 0.2V，Rds(on) = 25mΩ，則(ze)保護(hu)電流的大小為(wei) I = 4A
同(tong)樣地，過(guo)電流(liu)檢(jian)測也(ye)必須設有延(yan)遲時(shi)間以防有突發電流(liu)流(liu)入時(shi)產生誤動作。
通常(chang)在(zai)過電流產生后，若能去除過電流因素（例如馬(ma)上與負載脫離），將會(hui)恢復其正(zheng)常(chang)狀態，可(ke)以再進行正(zheng)常(chang)的充(chong)放電動作。
四、鋰電池保護IC的(de)新功能(neng)
除(chu)了上述的(de)鋰電池保護IC功能之外，下面這(zhe)些新的(de)功能同樣值得關注：
1.充電時(shi)的過電流保護
當連接充(chong)電(dian)(dian)器(qi)進行(xing)充(chong)電(dian)(dian)時(shi)突然產生過(guo)(guo)電(dian)(dian)流(liu)（如充(chong)電(dian)(dian)器(qi)損壞），電(dian)(dian)路立即進行(xing)過(guo)(guo)電(dian)(dian)流(liu)檢測，此時(shi)Cout將由高(gao)轉為低(di)，功率(lv)MOSFET由開轉為切斷(duan)，實現保護功能。
V- = I × Rds(on) × 2
（I 是充(chong)電(dian)電(dian)流；Vdet4，過電(dian)流檢測電(dian)壓，Vdet4 為 -0.1V）
2.過度充電(dian)時(shi)的鎖(suo)定模(mo)式
通常保(bao)(bao)(bao)護(hu)(hu)IC在(zai)過(guo)度充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)保(bao)(bao)(bao)護(hu)(hu)時將(jiang)(jiang)經過(guo)一(yi)段(duan)延(yan)遲時間(jian)，然(ran)后就(jiu)會(hui)(hui)將(jiang)(jiang)功(gong)率MOSFET切斷以達(da)到保(bao)(bao)(bao)護(hu)(hu)的目(mu)的，當鋰電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)壓一(yi)直(zhi)下降到解(jie)除點（過(guo)度充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)滯后電(dian)(dian)(dian)(dian)(dian)(dian)壓）時就(jiu)會(hui)(hui)恢復，此時又(you)會(hui)(hui)繼續充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)→保(bao)(bao)(bao)護(hu)(hu)→放電(dian)(dian)(dian)(dian)(dian)(dian)→充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)→放電(dian)(dian)(dian)(dian)(dian)(dian)。這種狀(zhuang)態(tai)的安(an)全性(xing)問(wen)題將(jiang)(jiang)無法獲得有效解(jie)決，鋰電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)將(jiang)(jiang)一(yi)直(zhi)重復著充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)→放電(dian)(dian)(dian)(dian)(dian)(dian)→充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)→放電(dian)(dian)(dian)(dian)(dian)(dian)的動作(zuo)，功(gong)率MOSFET的柵(zha)極(ji)將(jiang)(jiang)反復地(di)處于(yu)高低電(dian)(dian)(dian)(dian)(dian)(dian)壓交替狀(zhuang)態(tai)，這樣可(ke)能(neng)會(hui)(hui)使MOSFET變(bian)熱，還(huan)會(hui)(hui)降低電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)壽命，因此鎖(suo)定(ding)模式很(hen)重要。假如鋰電(dian)(dian)(dian)(dian)(dian)(dian)保(bao)(bao)(bao)護(hu)(hu)電(dian)(dian)(dian)(dian)(dian)(dian)路在(zai)檢測到過(guo)度充(chong)電(dian)(dian)(dian)(dian)(dian)(dian)保(bao)(bao)(bao)護(hu)(hu)時有鎖(suo)定(ding)模式，MOSFET將(jiang)(jiang)不(bu)會(hui)(hui)變(bian)熱，且安(an)全性(xing)相對提高很(hen)多。
在(zai)(zai)過(guo)度(du)充(chong)(chong)電(dian)保(bao)護之后，只要(yao)充(chong)(chong)電(dian)器連接在(zai)(zai)電(dian)池(chi)包上，此時將(jiang)進入過(guo)充(chong)(chong)鎖定模式。此時，即使鋰電(dian)池(chi)電(dian)壓下降也不(bu)會產生再充(chong)(chong)電(dian)的情形(xing)，將(jiang)充(chong)(chong)電(dian)器移除并連接負載(zai)即可(ke)恢復充(chong)(chong)放電(dian)的狀態(tai)。
3.減少保護(hu)電路組件尺寸
將(jiang)過度(du)充電和短路保護用(yong)的延遲電容(rong)器整合在到(dao)保護IC里(li)面，以減少保護電路組件尺寸。
五(wu)、對保護IC性，他說：想發財就(jiu)去(qu)萬通商聯(lian)找優質鉸鏈供貨(huo)商！性能的要求
1.過度充電保護(hu)的高精(jing)密(mi)度化(hua)
當鋰離子(zi)電(dian)(dian)池(chi)有過(guo)度(du)(du)充(chong)(chong)(chong)(chong)電(dian)(dian)狀(zhuang)(zhuang)態時(shi)(shi)，為(wei)(wei)防止(zhi)因(yin)溫(wen)度(du)(du)上升所導致(zhi)的(de)(de)(de)(de)內壓上升，須截止(zhi)充(chong)(chong)(chong)(chong)電(dian)(dian)狀(zhuang)(zhuang)態。保護IC將檢(jian)(jian)測(ce)(ce)電(dian)(dian)池(chi)電(dian)(dian)壓，當檢(jian)(jian)測(ce)(ce)到(dao)(dao)過(guo)度(du)(du)充(chong)(chong)(chong)(chong)電(dian)(dian)時(shi)(shi)，則(ze)過(guo)度(du)(du)充(chong)(chong)(chong)(chong)電(dian)(dian)檢(jian)(jian)測(ce)(ce)的(de)(de)(de)(de)功率MOSFET使之(zhi)切斷而截止(zhi)充(chong)(chong)(chong)(chong)電(dian)(dian)。此時(shi)(shi)應注意的(de)(de)(de)(de)是過(guo)度(du)(du)充(chong)(chong)(chong)(chong)電(dian)(dian)的(de)(de)(de)(de)檢(jian)(jian)測(ce)(ce)電(dian)(dian)壓的(de)(de)(de)(de)高精(jing)密度(du)(du)化，在電(dian)(dian)池(chi)充(chong)(chong)(chong)(chong)電(dian)(dian)時(shi)(shi)，使電(dian)(dian)池(chi)充(chong)(chong)(chong)(chong)電(dian)(dian)到(dao)(dao)飽滿的(de)(de)(de)(de)狀(zhuang)(zhuang)態是使用者很關心的(de)(de)(de)(de)問(wen)題，同(tong)時(shi)(shi)兼顧到(dao)(dao)安(an)全性問(wen)題，因(yin)此需要在達到(dao)(dao)容許(xu)電(dian)(dian)壓時(shi)(shi)截止(zhi)充(chong)(chong)(chong)(chong)電(dian)(dian)狀(zhuang)(zhuang)態。要同(tong)時(shi)(shi)符合這兩個條件(jian)，必(bi)須有高精(jing)密度(du)(du)的(de)(de)(de)(de)檢(jian)(jian)測(ce)(ce)器(qi)，目前檢(jian)(jian)測(ce)(ce)器(qi)的(de)(de)(de)(de)精(jing)密度(du)(du)為(wei)(wei)25mV，該精(jing)密度(du)(du)將有待(dai)于進一步提高。
2.降低保護IC的耗電
隨著使(shi)(shi)用時間的增加，已充過(guo)電(dian)的鋰離子電(dian)池(chi)電(dian)壓會逐漸降(jiang)低(di)，最(zui)后低(di)到(dao)規格標準值以下，此(ci)(ci)時就需(xu)要再(zai)度(du)充電(dian)。若未(wei)充電(dian)而(er)繼續使(shi)(shi)用，可能造成由于過(guo)度(du)放(fang)電(dian)而(er)使(shi)(shi)電(dian)池(chi)不能繼續使(shi)(shi)用。為防(fang)止過(guo)度(du)放(fang)電(dian)，保(bao)護IC必(bi)須檢(jian)(jian)測(ce)電(dian)池(chi)電(dian)壓，一旦(dan)達到(dao)過(guo)度(du)放(fang)電(dian)檢(jian)(jian)測(ce)電(dian)壓以下，就得使(shi)(shi)放(fang)電(dian)一方的功(gong)率MOSFET切斷而(er)截(jie)止放(fang)電(dian)。但此(ci)(ci)時電(dian)池(chi)本身仍有自(zi)然放(fang)電(dian)及保(bao)護IC的消(xiao)耗電(dian)流(liu)存在，因此(ci)(ci)需(xu)要使(shi)(shi)保(bao)護IC消(xiao)耗的電(dian)流(liu)降(jiang)到(dao)最(zui)低(di)程(cheng)度(du)。
3.過(guo)電流／短(duan)路保(bao)護需有低(di)檢測電壓及高精(jing)密度的要求
因不明原因導(dao)致短路時必須立即停止放(fang)電(dian)(dian)。過(guo)電(dian)(dian)流的(de)檢(jian)測是以功率(lv)MOSFET的(de)Rds(on)為感(gan)應阻抗(kang)，以監(jian)視其電(dian)(dian)壓(ya)的(de)下降，此時的(de)電(dian)(dian)壓(ya)若比過(guo)電(dian)(dian)流檢(jian)測電(dian)(dian)壓(ya)還高(gao)時即停止放(fang)電(dian)(dian)。為了使功率(lv)MOSFET的(de)Rds(on)在充(chong)電(dian)(dian)電(dian)(dian)流與放(fang)電(dian)(dian)電(dian)(dian)流時有效(xiao)應用，需(xu)使該阻抗(kang)值(zhi)盡(jin)量(liang)低，目前(qian)該阻抗(kang)約為20mΩ~30mΩ，這樣過(guo)電(dian)(dian)流檢(jian)測電(dian)(dian)壓(ya)就(jiu)可較低。
4.耐(nai)高電壓
電(dian)池包(bao)與充電(dian)器(qi)連接(jie)時瞬(shun)間(jian)會有高壓產生(sheng)，因此(ci)保護IC應滿足(zu)耐(nai)高壓的要求。
5.低電池功耗
在保護狀態時，其靜態耗(hao)電流必(bi)須(xu)要小0.1μA。
6.零(ling)伏可充(chong)電
有些(xie)電池在存放的(de)(de)過程中(zhong)可能因為(wei)放太久(jiu)或不正常的(de)(de)原因導致電壓低到0V，故(gu)保(bao)護IC需要在0V時也可以實現充電。
六、保護(hu)IC發展展望
如(ru)前(qian)所述，未(wei)來保護IC將(jiang)進一步提(ti)高(gao)(gao)檢測電(dian)壓的(de)(de)精密度(du)、降低保護IC的(de)(de)耗電(dian)流和(he)提(ti)高(gao)(gao)誤(wu)動(dong)作防止(zhi)功(gong)能等，同時充電(dian)器連接端子(zi)的(de)(de)高(gao)(gao)耐壓也是研(yan)發的(de)(de)重點。 在(zai)封裝(zhuang)(zhuang)方面，目前(qian)已由(you)SOT23-6逐漸轉向SON6封裝(zhuang)(zhuang)，將(jiang)來還有CSP封裝(zhuang)(zhuang)，甚至(zhi)出現(xian)COB產品(pin)用以(yi)滿(man)足(zu)現(xian)在(zai)所強調的(de)(de)輕薄短小要求(qiu)。
在功能(neng)方面(mian)，保護IC不(bu)需(xu)要整(zheng)合所有的(de)功能(neng)，可根據不(bu)同的(de)鋰電池材料開發(fa)出單一保護IC，如(ru)只(zhi)有過(guo)充(chong)保護或過(guo)放保護功能(neng)，這樣(yang)可以大幅(fu)減(jian)少成本及尺寸。
當然(ran)，功能組(zu)件單(dan)晶體(ti)化是不變的目標，如目前手(shou)機制造商都朝(chao)向將(jiang)保護IC、充(chong)電電路(lu)(lu)以及電源管(guan)理IC等(deng)周邊電路(lu)(lu)與(yu)邏輯IC構成(cheng)(cheng)雙芯(xin)片的芯(xin)片組(zu)，但目前要使功率MOSFET的開路(lu)(lu)阻抗降低(di)，難以與(yu)其它(ta)IC整合，即(ji)使以特殊技術(shu)制成(cheng)(cheng)單(dan)芯(xin)片，恐怕成(cheng)(cheng)本將(jiang)會過高。因此，保護IC的單(dan)晶體(ti)化將(jiang)需一段(duan)時間來解決(jue)。